UST954006I4 - On-chip substrate voltage generator - Google Patents

On-chip substrate voltage generator Download PDF

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Publication number
UST954006I4
UST954006I4 US05/672,898 US67289876A UST954006I4 US T954006 I4 UST954006 I4 US T954006I4 US 67289876 A US67289876 A US 67289876A US T954006 I4 UST954006 I4 US T954006I4
Authority
US
United States
Prior art keywords
substrate
substrate voltage
voltage generator
chip substrate
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US05/672,898
Inventor
James M. Lee
George Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US05/672,898 priority Critical patent/UST954006I4/en
Application granted granted Critical
Publication of UST954006I4 publication Critical patent/UST954006I4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)

Abstract

disclosed is an apparatus for generating and controlling a desired substrate potential level or a semiconductor chip. A pulse source, such as an oscillator, provides a pulse train which, in combination with a control signal from the substrate voltage detector, selectively discharges a capacitor in a voltage level converter for obtaining a desired level of substrate potential. A feedback path through the substrate regulates the conductivity of a reference transistor in the substrate voltage detector providing the required control signal.
US05/672,898 1973-06-29 1976-04-02 On-chip substrate voltage generator Pending UST954006I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/672,898 UST954006I4 (en) 1973-06-29 1976-04-02 On-chip substrate voltage generator

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37527173A 1973-06-29 1973-06-29
US56721375A 1975-04-11 1975-04-11
US05/672,898 UST954006I4 (en) 1973-06-29 1976-04-02 On-chip substrate voltage generator

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US56721375A Continuation 1973-06-29 1975-04-11

Publications (1)

Publication Number Publication Date
UST954006I4 true UST954006I4 (en) 1977-01-04

Family

ID=27409237

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/672,898 Pending UST954006I4 (en) 1973-06-29 1976-04-02 On-chip substrate voltage generator

Country Status (1)

Country Link
US (1) UST954006I4 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283642A (en) 1979-09-10 1981-08-11 National Semiconductor Corporation Regulation of current through depletion devices in a MOS integrated circuit
US5592010A (en) * 1992-06-02 1997-01-07 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283642A (en) 1979-09-10 1981-08-11 National Semiconductor Corporation Regulation of current through depletion devices in a MOS integrated circuit
US5592010A (en) * 1992-06-02 1997-01-07 Kabushiki Kaisha Toshiba Semiconductor device

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