JPS5582319A - Voltage control circuit - Google Patents
Voltage control circuitInfo
- Publication number
- JPS5582319A JPS5582319A JP15615578A JP15615578A JPS5582319A JP S5582319 A JPS5582319 A JP S5582319A JP 15615578 A JP15615578 A JP 15615578A JP 15615578 A JP15615578 A JP 15615578A JP S5582319 A JPS5582319 A JP S5582319A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- voltage
- power source
- control
- oscillation frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electromechanical Clocks (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
PURPOSE: To extend the control range of a power source voltage by providing a boosting circuit in a circuit which measures two periods of an oscillator, which has an oscillation frequency comparatively stable for environments, and an oscillator, which has an oscillation frequency comparatively unstable for environments, to control the power source voltage.
CONSTITUTION: Voltage control circuit 100 is constituted by charge pump circuit 18, capacity 17, transistor Tr16 and boosting circuit 50, and the supply voltage to circuit block 5 which is operated with a low voltage in circuits of a small-size electronic device is controlled by power source 7. A voltage is applied from power source 7 to high-potential side VDD of block 5 directly, and low-potential side VSS1 is connected to low-potential side VSS2 of power source 7 and circuit 18 through Tr16. Means 15 to measure the period relation between an oscillator, whose oscillation frequency is stable for environments, and an oscilator, whose oscillation frequency is comparatively unstable for them, is provided in block 5, and capacity 17 is charged by signals from means 15 to circuit 18 to control the gate of Tr16. Circuit 50 supplies potential VSS3 lower than potential VSS2 to circuit 18, and the gate of Tr16 is controlled by high potential VDD and low potential VSS3 to control the voltage of block 5.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15615578A JPS5582319A (en) | 1978-12-15 | 1978-12-15 | Voltage control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15615578A JPS5582319A (en) | 1978-12-15 | 1978-12-15 | Voltage control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5582319A true JPS5582319A (en) | 1980-06-21 |
Family
ID=15621544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15615578A Pending JPS5582319A (en) | 1978-12-15 | 1978-12-15 | Voltage control circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5582319A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100387266B1 (en) * | 1999-12-28 | 2003-06-11 | 주식회사 하이닉스반도체 | Voltage control circuit |
| US6608791B2 (en) | 1985-07-22 | 2003-08-19 | Hitachi, Ltd. | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
-
1978
- 1978-12-15 JP JP15615578A patent/JPS5582319A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6608791B2 (en) | 1985-07-22 | 2003-08-19 | Hitachi, Ltd. | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
| US6970391B2 (en) | 1985-07-22 | 2005-11-29 | Renesas Technology Corporation | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
| US7002856B2 (en) | 1986-07-18 | 2006-02-21 | Renesas Technology Corporation | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
| KR100387266B1 (en) * | 1999-12-28 | 2003-06-11 | 주식회사 하이닉스반도체 | Voltage control circuit |
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