KR970023354A - Internal voltage level compensation circuit - Google Patents

Internal voltage level compensation circuit Download PDF

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Publication number
KR970023354A
KR970023354A KR1019950034287A KR19950034287A KR970023354A KR 970023354 A KR970023354 A KR 970023354A KR 1019950034287 A KR1019950034287 A KR 1019950034287A KR 19950034287 A KR19950034287 A KR 19950034287A KR 970023354 A KR970023354 A KR 970023354A
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KR
South Korea
Prior art keywords
voltage
internal circuit
driving
internal
down converter
Prior art date
Application number
KR1019950034287A
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Korean (ko)
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KR0171952B1 (en
Inventor
이동민
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950034287A priority Critical patent/KR0171952B1/en
Publication of KR970023354A publication Critical patent/KR970023354A/en
Application granted granted Critical
Publication of KR0171952B1 publication Critical patent/KR0171952B1/en

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

본 발명은 반도체장치에 관한 것으로, 특히 반도체장치에 있어서 칩의 내부회로 구동용 전압을 필요한 만큼의 전압을 보상하기 위한 내부 전압레벨 보상회로에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to an internal voltage level compensating circuit for compensating a voltage as much as necessary for a voltage for driving an internal circuit of a chip in a semiconductor device.

본 발명의 내부 전압레벨 보상회로는 내부회로를 구동하기 위하여 외부 공급원으로 외부 공급전압을 공급받아 일정한 내부회로 구동용 전압을 발생하는 전압다운변환기와, 상기 전압다운변환기가 발생한 내부회로 구동용 전압이 상기 내부회로를 구동하기에 부족한 전압인 경우 내부회로 구동에 전압을 보충하기 위한 보충수단과, 상기 외부공급 전압과 상기 전압다운변환기의 내부회로 구동용 전압을 비교하고 상기 비교상태에 따라 상기 보충수단의 동작을 선택적으로 절환하는 전압레벨감지기로 구성된다.The internal voltage level compensating circuit of the present invention includes a voltage down converter for generating a constant internal circuit driving voltage by receiving an external supply voltage from an external source for driving an internal circuit, and an internal circuit driving voltage generated by the voltage down converter. When the voltage is insufficient to drive the internal circuit, the supplementary means for supplementing the voltage to the internal circuit driving, and comparing the external supply voltage and the voltage for driving the internal circuit of the voltage down converter and the supplementing means according to the comparison state It is composed of a voltage level sensor for selectively switching the operation of.

Description

내부 전압 레벨 보상회로Internal voltage level compensation circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 실시예에 따른 내부 전압 레벨 보상회로도,2 is an internal voltage level compensation circuit diagram according to an embodiment of the present invention;

제3도는 제2도에 도시된 외부전압 레벨감지기의 상세 회로도.3 is a detailed circuit diagram of the external voltage level sensor shown in FIG.

Claims (2)

내부회로를 구동하기 위하여 외부 공급원으로부터 외부 공급전압을 공급받아 내부회로 구동용 전압을 발생하는 전압다운변환기와, 상기 전압다운변환기가 발생한 내부회로 구동용 전압이 상기 내부회로를 구동하기에 부족한 전압인 경우 내부회로 구동에 전압을 보충하기 위한 보충수단과, 상기 외부공급전압과 상기 전압다운변환기의 내부회로 구동용 전압을 비교하고 상기 비교상태에 따라 상기 보충수단의 동작을 선택적으로 절환하는 전압레벨감지기로 구성되는 것을 특징으로 하는 내부전압 레벨보상회로.A voltage down converter that receives an external supply voltage from an external source for driving an internal circuit and generates an internal circuit driving voltage, and an internal circuit driving voltage generated by the voltage down converter is a voltage insufficient to drive the internal circuit. And a voltage level detector for comparing the supplementary means for supplementing the voltage with the internal circuit driving and the external circuit driving voltage of the voltage down converter and selectively switching the operation of the supplementary means according to the comparison state. Internal voltage level compensation circuit, characterized in that consisting of. 제1항에 있어서, 상기 보충수단은 파모스형 트랜지스터를 포함하고, 상기 전압레벨감지기는 상기 외부공급전압과 상기 기준전압을 비교하고 상기 비교상태에 따라 출력신호의 레벨을 제어하는 차동 증폭기와, 상기 차동증폭기의 출력신호 레벨 상태에 따라 상기 피모스형 트랜지스터의 동작을 절환하는 절환수단을 구비하는 것을 특징으로 하는 내부전압 레벨보상회로.2. The apparatus of claim 1, wherein the replenishing means comprises a PMOS transistor, wherein the voltage level sensor comprises: a differential amplifier for comparing the external supply voltage with the reference voltage and controlling a level of an output signal according to the comparison state; And switching means for switching the operation of the PMOS transistor in accordance with the output signal level state of the differential amplifier. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950034287A 1995-10-06 1995-10-06 Internal voltage level compensation circuit KR0171952B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950034287A KR0171952B1 (en) 1995-10-06 1995-10-06 Internal voltage level compensation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034287A KR0171952B1 (en) 1995-10-06 1995-10-06 Internal voltage level compensation circuit

Publications (2)

Publication Number Publication Date
KR970023354A true KR970023354A (en) 1997-05-30
KR0171952B1 KR0171952B1 (en) 1999-03-30

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ID=19429435

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950034287A KR0171952B1 (en) 1995-10-06 1995-10-06 Internal voltage level compensation circuit

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990010546A (en) * 1997-07-16 1999-02-18 윤종용 Power supply circuit of low voltage semiconductor device
KR100496795B1 (en) * 1997-12-23 2005-09-02 삼성전자주식회사 Static random access memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587072B1 (en) 2004-04-19 2006-06-08 주식회사 하이닉스반도체 A device for controlling the operation of an internal voltage generator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990010546A (en) * 1997-07-16 1999-02-18 윤종용 Power supply circuit of low voltage semiconductor device
KR100496795B1 (en) * 1997-12-23 2005-09-02 삼성전자주식회사 Static random access memory device

Also Published As

Publication number Publication date
KR0171952B1 (en) 1999-03-30

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