DE2401613A1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE2401613A1 DE2401613A1 DE19742401613 DE2401613A DE2401613A1 DE 2401613 A1 DE2401613 A1 DE 2401613A1 DE 19742401613 DE19742401613 DE 19742401613 DE 2401613 A DE2401613 A DE 2401613A DE 2401613 A1 DE2401613 A1 DE 2401613A1
- Authority
- DE
- Germany
- Prior art keywords
- photoresist
- protective layer
- semiconductor device
- cured
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 52
- 229920002120 photoresistant polymer Polymers 0.000 claims description 84
- 239000011241 protective layer Substances 0.000 claims description 53
- 239000010410 layer Substances 0.000 claims description 42
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 4
- -1 aromatic diazonium compound Chemical class 0.000 claims description 4
- 239000004922 lacquer Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 239000003973 paint Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 2
- VVLYZBOITRUDKI-UHFFFAOYSA-N benzene 1-phenylethanone Chemical compound C1=CC=CC=C1.C(C)(=O)C1=CC=CC=C1 VVLYZBOITRUDKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000001913 cellulose Substances 0.000 claims description 2
- 229920002678 cellulose Polymers 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920002554 vinyl polymer Polymers 0.000 claims description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000010954 inorganic particle Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000005011 phenolic resin Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BKXKZVNHYMYXOY-UHFFFAOYSA-N (3,4-dihydroxyphenyl)-phenylmethanone;naphthalene-1,4-dione Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1.C1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 BKXKZVNHYMYXOY-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N cinnamic acid Chemical class OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- CXHHBNMLPJOKQD-UHFFFAOYSA-N methyl hydrogen carbonate Chemical class COC(O)=O CXHHBNMLPJOKQD-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742401613 DE2401613A1 (de) | 1974-01-14 | 1974-01-14 | Halbleitervorrichtung |
GB5577174A GB1465650A (en) | 1974-01-14 | 1974-12-24 | Semiconductor devices |
IT1911175A IT1028249B (it) | 1974-01-14 | 1975-01-09 | Dispositivo a semiconduttori |
FR7500823A FR2258002B1 (enrdf_load_stackoverflow) | 1974-01-14 | 1975-01-13 | |
JP621875A JPS50104572A (enrdf_load_stackoverflow) | 1974-01-14 | 1975-01-13 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742401613 DE2401613A1 (de) | 1974-01-14 | 1974-01-14 | Halbleitervorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2401613A1 true DE2401613A1 (de) | 1975-07-17 |
Family
ID=5904759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19742401613 Pending DE2401613A1 (de) | 1974-01-14 | 1974-01-14 | Halbleitervorrichtung |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS50104572A (enrdf_load_stackoverflow) |
DE (1) | DE2401613A1 (enrdf_load_stackoverflow) |
FR (1) | FR2258002B1 (enrdf_load_stackoverflow) |
GB (1) | GB1465650A (enrdf_load_stackoverflow) |
IT (1) | IT1028249B (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929339A1 (de) * | 1978-07-24 | 1980-02-14 | Citizen Watch Co Ltd | Halbleiteranordnung |
DE3327960A1 (de) * | 1983-08-03 | 1985-02-14 | Telefunken electronic GmbH, 7100 Heilbronn | Halbleiteranordnung in einem isolierstoffgehaeuse |
DE3415817A1 (de) * | 1984-04-27 | 1985-10-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum abdecken der vorderseite eines mit bauelementstrukturen versehenen substrates |
US4618878A (en) * | 1983-06-18 | 1986-10-21 | Kabushiki Kaisha Toshiba | Semiconductor device having a multilayer wiring structure using a polyimide resin |
DE4123900A1 (de) * | 1991-07-18 | 1993-01-21 | Siemens Ag | Schutzschicht fuer wafer |
DE4435120A1 (de) * | 1994-09-30 | 1996-04-04 | Siemens Ag | Schutzschicht für Wafer und Verfahren zu deren Herstllung |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5850417B2 (ja) * | 1979-07-31 | 1983-11-10 | 富士通株式会社 | 半導体装置の製造方法 |
JPS5632731A (en) * | 1979-08-27 | 1981-04-02 | Fujitsu Ltd | Semiconductor device |
JPS5661130A (en) * | 1979-10-25 | 1981-05-26 | Fuji Electric Co Ltd | Semiconductor device |
JPS5736835A (en) * | 1980-08-15 | 1982-02-27 | Nec Corp | Semiconductor device |
JPS5739736U (enrdf_load_stackoverflow) * | 1980-08-18 | 1982-03-03 | ||
JPS5740956A (en) * | 1980-08-25 | 1982-03-06 | Fujitsu Ltd | Semiconductor device |
JPS5975648A (ja) * | 1982-10-23 | 1984-04-28 | Nippon Precision Saakitsutsu Kk | 半導体装置およびその製造方法 |
FR2544132B1 (fr) * | 1983-04-08 | 1986-11-21 | Telecommunications Sa | Detecteur photoconducteur en immersion optique |
-
1974
- 1974-01-14 DE DE19742401613 patent/DE2401613A1/de active Pending
- 1974-12-24 GB GB5577174A patent/GB1465650A/en not_active Expired
-
1975
- 1975-01-09 IT IT1911175A patent/IT1028249B/it active
- 1975-01-13 JP JP621875A patent/JPS50104572A/ja active Pending
- 1975-01-13 FR FR7500823A patent/FR2258002B1/fr not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929339A1 (de) * | 1978-07-24 | 1980-02-14 | Citizen Watch Co Ltd | Halbleiteranordnung |
US4618878A (en) * | 1983-06-18 | 1986-10-21 | Kabushiki Kaisha Toshiba | Semiconductor device having a multilayer wiring structure using a polyimide resin |
DE3327960A1 (de) * | 1983-08-03 | 1985-02-14 | Telefunken electronic GmbH, 7100 Heilbronn | Halbleiteranordnung in einem isolierstoffgehaeuse |
DE3415817A1 (de) * | 1984-04-27 | 1985-10-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum abdecken der vorderseite eines mit bauelementstrukturen versehenen substrates |
DE4123900A1 (de) * | 1991-07-18 | 1993-01-21 | Siemens Ag | Schutzschicht fuer wafer |
DE4435120A1 (de) * | 1994-09-30 | 1996-04-04 | Siemens Ag | Schutzschicht für Wafer und Verfahren zu deren Herstllung |
DE4435120C2 (de) * | 1994-09-30 | 2000-08-03 | Siemens Ag | Schutzschicht für Wafer und Verfahren zu deren Herstellung |
Also Published As
Publication number | Publication date |
---|---|
GB1465650A (en) | 1977-02-23 |
FR2258002B1 (enrdf_load_stackoverflow) | 1978-12-08 |
JPS50104572A (enrdf_load_stackoverflow) | 1975-08-18 |
FR2258002A1 (enrdf_load_stackoverflow) | 1975-08-08 |
IT1028249B (it) | 1979-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2401613A1 (de) | Halbleitervorrichtung | |
US3801880A (en) | Multilayer interconnected structure for semiconductor integrated circuit and process for manufacturing the same | |
DE3786914T2 (de) | Verfahren zum herstellen einer integrierten schaltungspackungsstruktur. | |
US3846166A (en) | Method of producing multilayer wiring structure of integrated circuit | |
DE3316041C2 (enrdf_load_stackoverflow) | ||
DE102014019828B3 (de) | Verfahren zur Verarbeitung einer Halbleitervorrichtung | |
JPS5843453A (ja) | ポリイミド材料の食刻方法 | |
US3767490A (en) | Process for etching organic coating layers | |
EP1658647B1 (de) | Integrierte schaltung mit einem organischen halbleiter und verfahren zur herstellung einer integrierten schaltung | |
US3160520A (en) | Method for coating p-nu junction devices with an electropositive exhibiting materialand article | |
DE112018007677B4 (de) | Verfahren zur Herstellung eines Halbleitergerätes | |
US4675985A (en) | Method for manufacturing a semiconductor memory device having a high radiation resistance | |
DE2629996A1 (de) | Verfahren zur passivierung und planarisierung eines metallisierungsmusters | |
DE102015103709A1 (de) | Leistungshalbleitervorrichtung, elektronisches Leistungsmodul und Verfahren zum Bearbeiten einer Leistungshalbleitervorrichtung | |
DE1514453A1 (de) | Verfahren zum Herstellen von Halbleiterschaltungen | |
DE3485828T2 (de) | Elektronische komponenten mit ausgehaerteten copolymeren mit endung aus vinyl und/oder azetylen und verfahren zu deren herstellung. | |
DE102010039298A1 (de) | Verfahren zum Füllen von Hohlräumen in Wafern, entsprechend gefülltes Sackloch und Wafer mit entsprechend gefüllten Isolationsgräben | |
EP0153650B1 (de) | Dünnschichthybridschaltung | |
DE112016005077T5 (de) | Leistungshalbleitervorrichtung und Verfahren zum Herstellen einer Leistungshalbleitervorrichtung | |
EP0216945B1 (de) | Verfahren zum Anbringen eines Kontaktes an einem Kontaktbereich eines Substrats aus Halbleitermaterial | |
DE4013449C2 (de) | Verfahren zur Herstellung von Isolierschichten auf einem Halbleitersubstrat | |
EP1658624A2 (de) | Integrierte schaltung und verfahren zur herstellung einer integrierten schaltung | |
DE2751517C2 (de) | Oberflächenpassiviertes Halbleiterbauelement mit einer Halbleiterscheibe und Verfahren zur Herstellung desselben | |
US3619733A (en) | Semiconductor device with multilevel metalization and method of making the same | |
DE102014114188B4 (de) | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OHW | Rejection |