DE3485828T2 - Elektronische komponenten mit ausgehaerteten copolymeren mit endung aus vinyl und/oder azetylen und verfahren zu deren herstellung. - Google Patents
Elektronische komponenten mit ausgehaerteten copolymeren mit endung aus vinyl und/oder azetylen und verfahren zu deren herstellung.Info
- Publication number
- DE3485828T2 DE3485828T2 DE8484112628T DE3485828T DE3485828T2 DE 3485828 T2 DE3485828 T2 DE 3485828T2 DE 8484112628 T DE8484112628 T DE 8484112628T DE 3485828 T DE3485828 T DE 3485828T DE 3485828 T2 DE3485828 T2 DE 3485828T2
- Authority
- DE
- Germany
- Prior art keywords
- vinyl
- production
- electronic components
- acetylene end
- cured copolymers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 title 2
- 229920001577 copolymer Polymers 0.000 title 1
- 229920002554 vinyl polymer Polymers 0.000 title 1
- ORGHESHFQPYLAO-UHFFFAOYSA-N vinyl radical Chemical class C=[CH] ORGHESHFQPYLAO-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Static Random-Access Memory (AREA)
- Amplifiers (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Element Separation (AREA)
- Organic Insulating Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55673483A | 1983-11-30 | 1983-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3485828D1 DE3485828D1 (de) | 1992-08-27 |
DE3485828T2 true DE3485828T2 (de) | 1993-03-11 |
Family
ID=24222626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484112628T Expired - Fee Related DE3485828T2 (de) | 1983-11-30 | 1984-10-19 | Elektronische komponenten mit ausgehaerteten copolymeren mit endung aus vinyl und/oder azetylen und verfahren zu deren herstellung. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0143963B1 (de) |
JP (2) | JPS60120723A (de) |
DE (1) | DE3485828T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60119730A (ja) * | 1983-11-30 | 1985-06-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ポリイミド誘導体薄膜の形成方法 |
US4599136A (en) * | 1984-10-03 | 1986-07-08 | International Business Machines Corporation | Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials |
US4568601A (en) * | 1984-10-19 | 1986-02-04 | International Business Machines Corporation | Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures |
US4654120A (en) * | 1985-10-31 | 1987-03-31 | International Business Machines Corporation | Method of making a planar trench semiconductor structure |
JPH069222B2 (ja) * | 1986-01-07 | 1994-02-02 | 日立化成工業株式会社 | 多層配線構造の製造法 |
JPS62183127A (ja) * | 1986-02-06 | 1987-08-11 | Fuji Electric Co Ltd | 半導体素子の製造方法 |
US4886573A (en) * | 1986-08-27 | 1989-12-12 | Hitachi, Ltd. | Process for forming wiring on substrate |
DE4300765C1 (de) * | 1993-01-14 | 1993-12-23 | Bosch Gmbh Robert | Verfahren zum Planarisieren grabenförmiger Strukturen |
TWI311142B (en) * | 2006-10-18 | 2009-06-21 | Eternal Chemical Co Ltd | Amic acid ester oligomer, precursor composition for polyimide resin containing the same, and uses |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503498B2 (de) * | 1971-09-18 | 1975-02-05 | ||
DE2411682C2 (de) * | 1973-04-03 | 1982-10-07 | Hughes Aircraft Co., Culver City, Calif. | Acetylensubstituierte Polyimid-Oligomere |
US3985597A (en) * | 1975-05-01 | 1976-10-12 | International Business Machines Corporation | Process for forming passivated metal interconnection system with a planar surface |
JPS5213833A (en) * | 1975-07-07 | 1977-02-02 | Kubota Ltd | Reaperrbinder |
JPS5811449B2 (ja) * | 1977-05-23 | 1983-03-03 | ヒュ−ズ・エアクラフト・カンパニ− | アセチレン置換ポリイミドオリゴマ−より硬化された樹脂を製造する方法 |
EP0019391B1 (de) * | 1979-05-12 | 1982-10-06 | Fujitsu Limited | Verfahren zur Herstellung einer elektronischen Vorrichtung mit Vielschicht-Verdrahtungsstruktur |
JPS5761023A (en) * | 1980-06-20 | 1982-04-13 | Nasa | Polyimide prepolymer, polyimide and composition for polyimide resin reinforcing fibrous material |
US4367119A (en) * | 1980-08-18 | 1983-01-04 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
GB2107926A (en) * | 1981-10-13 | 1983-05-05 | Monolithic Memories Inc | Semiconductor device and method of manufacture |
JPS60119730A (ja) * | 1983-11-30 | 1985-06-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ポリイミド誘導体薄膜の形成方法 |
-
1984
- 1984-09-10 JP JP59188287A patent/JPS60120723A/ja active Pending
- 1984-10-19 EP EP84112628A patent/EP0143963B1/de not_active Expired - Lifetime
- 1984-10-19 DE DE8484112628T patent/DE3485828T2/de not_active Expired - Fee Related
- 1984-11-09 JP JP59235328A patent/JPS60124094A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0143963A2 (de) | 1985-06-12 |
EP0143963A3 (en) | 1988-09-21 |
JPS60120723A (ja) | 1985-06-28 |
EP0143963B1 (de) | 1992-07-22 |
JPS60124094A (ja) | 1985-07-02 |
DE3485828D1 (de) | 1992-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |