DE2359153C2 - Integrierte Treiberschaltung - Google Patents
Integrierte TreiberschaltungInfo
- Publication number
- DE2359153C2 DE2359153C2 DE2359153A DE2359153A DE2359153C2 DE 2359153 C2 DE2359153 C2 DE 2359153C2 DE 2359153 A DE2359153 A DE 2359153A DE 2359153 A DE2359153 A DE 2359153A DE 2359153 C2 DE2359153 C2 DE 2359153C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- electrode
- control
- circuit
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 3
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 10
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
Landscapes
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00319966A US3843954A (en) | 1972-12-29 | 1972-12-29 | High-voltage integrated driver circuit and memory embodying same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2359153A1 DE2359153A1 (de) | 1974-07-11 |
| DE2359153C2 true DE2359153C2 (de) | 1983-01-20 |
Family
ID=23244307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2359153A Expired DE2359153C2 (de) | 1972-12-29 | 1973-11-28 | Integrierte Treiberschaltung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3843954A (en, 2012) |
| JP (1) | JPS5644515B2 (en, 2012) |
| DE (1) | DE2359153C2 (en, 2012) |
| FR (1) | FR2212607B1 (en, 2012) |
| GB (1) | GB1453708A (en, 2012) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5749996B2 (en, 2012) * | 1973-06-16 | 1982-10-25 | ||
| US3986054A (en) * | 1973-10-11 | 1976-10-12 | International Business Machines Corporation | High voltage integrated driver circuit |
| US4053798A (en) * | 1975-02-20 | 1977-10-11 | Matsushita Electronics Corporation | Negative resistance device |
| JPS53135136A (en) * | 1977-04-28 | 1978-11-25 | Shigeru Suzuki | Snow melting panel |
| CH631287A5 (fr) * | 1979-03-14 | 1982-07-30 | Centre Electron Horloger | Element de memoire non-volatile, electriquement reprogrammable. |
| US4596002A (en) * | 1984-06-25 | 1986-06-17 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
| US4598390A (en) * | 1984-06-25 | 1986-07-01 | International Business Machines Corporation | Random access memory RAM employing complementary transistor switch (CTS) memory cells |
| US4578779A (en) * | 1984-06-25 | 1986-03-25 | International Business Machines Corporation | Voltage mode operation scheme for bipolar arrays |
| US5598367A (en) * | 1995-06-07 | 1997-01-28 | International Business Machines Corporation | Trench EPROM |
| CN1192436C (zh) * | 2001-11-02 | 2005-03-09 | 力旺电子股份有限公司 | 可擦写可编程只读存储器的编程操作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3364362A (en) * | 1963-10-07 | 1968-01-16 | Bunker Ramo | Memory selection system |
| US3286189A (en) * | 1964-01-20 | 1966-11-15 | Ithaco | High gain field-effect transistor-loaded amplifier |
| US3375502A (en) * | 1964-11-10 | 1968-03-26 | Litton Systems Inc | Dynamic memory using controlled semiconductors |
| US3363115A (en) * | 1965-03-29 | 1968-01-09 | Gen Micro Electronics Inc | Integral counting circuit with storage capacitors in the conductive path of steering gate circuits |
| US3373295A (en) * | 1965-04-27 | 1968-03-12 | Aerojet General Co | Memory element |
| US3518635A (en) * | 1967-08-22 | 1970-06-30 | Bunker Ramo | Digital memory apparatus |
| US3521141A (en) * | 1967-10-30 | 1970-07-21 | Ibm | Leakage controlled electric charge switching and storing circuitry |
| US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
| US3629618A (en) * | 1970-08-27 | 1971-12-21 | North American Rockwell | Field effect transistor single-phase clock signal generator |
-
1972
- 1972-12-29 US US00319966A patent/US3843954A/en not_active Expired - Lifetime
-
1973
- 1973-11-20 FR FR7342451A patent/FR2212607B1/fr not_active Expired
- 1973-11-21 GB GB5397973A patent/GB1453708A/en not_active Expired
- 1973-11-27 JP JP13225873A patent/JPS5644515B2/ja not_active Expired
- 1973-11-28 DE DE2359153A patent/DE2359153C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4998935A (en, 2012) | 1974-09-19 |
| JPS5644515B2 (en, 2012) | 1981-10-20 |
| FR2212607B1 (en, 2012) | 1977-08-12 |
| GB1453708A (en) | 1976-10-27 |
| FR2212607A1 (en, 2012) | 1974-07-26 |
| DE2359153A1 (de) | 1974-07-11 |
| US3843954A (en) | 1974-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE4330778C2 (de) | Speicherzellenschaltung | |
| DE3037315C2 (en, 2012) | ||
| DE2556831C2 (de) | Matrixspeicher und Verfahren zu seinem Betrieb | |
| DE2632036C2 (de) | Integrierte Speicherschaltung mit Feldeffekttransistoren | |
| DE2525225A1 (de) | Schaltungsanordnung zur anzeige der verschiebung elektrischer ladung | |
| DE2721851A1 (de) | Verriegelnder leseverstaerker fuer halbleiterspeicheranordnungen | |
| DE2303409A1 (de) | Monolithisch integrierbare speicheranordnung | |
| DE2356275C2 (de) | Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht- FET | |
| DE1499843A1 (de) | Speicherzelle | |
| DE2544974A1 (de) | Anordnung zum darstellen logischer funktionen | |
| DE3131302A1 (de) | "nichtfluechtiges statisches speicherelement (ram) mit direktem zugriff" | |
| DE2510604C2 (de) | Integrierte Digitalschaltung | |
| DE2359153C2 (de) | Integrierte Treiberschaltung | |
| DE3876666T2 (de) | Halbleiter-festwertspeichereinrichtung. | |
| DE2311994A1 (de) | Latenzbildspeicher | |
| CH641587A5 (de) | Bistabile kippstufe mit fixierbarem schaltzustand. | |
| DE2460225A1 (de) | Lese-schreibschaltung fuer eine bipolare speicherzelle | |
| DE2363089C3 (de) | Speicherzelle mit Feldeffekttransistoren | |
| EP0100772B1 (de) | Elektrisch programmierbare Speichermatrix | |
| DE2153284A1 (de) | Speichermatrix | |
| DE2142721A1 (de) | Integrierte bistabile Speicherzelle | |
| DE2424858A1 (de) | Integrierte treiberschaltung | |
| DE2754987A1 (de) | Leistungslose halbleiter-speichervorrichtung | |
| DE2152109C3 (de) | Speichermatrix mit einem Feldeffekt-Halbleiterbauelement je Speicherplatz | |
| DE68918894T2 (de) | Statische MESFET-Speicherzelle mit wahlfreiem Zugriff. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |