FR2212607B1 - - Google Patents

Info

Publication number
FR2212607B1
FR2212607B1 FR7342451A FR7342451A FR2212607B1 FR 2212607 B1 FR2212607 B1 FR 2212607B1 FR 7342451 A FR7342451 A FR 7342451A FR 7342451 A FR7342451 A FR 7342451A FR 2212607 B1 FR2212607 B1 FR 2212607B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7342451A
Other versions
FR2212607A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2212607A1 publication Critical patent/FR2212607A1/fr
Application granted granted Critical
Publication of FR2212607B1 publication Critical patent/FR2212607B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
FR7342451A 1972-12-29 1973-11-20 Expired FR2212607B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00319966A US3843954A (en) 1972-12-29 1972-12-29 High-voltage integrated driver circuit and memory embodying same

Publications (2)

Publication Number Publication Date
FR2212607A1 FR2212607A1 (fr) 1974-07-26
FR2212607B1 true FR2212607B1 (fr) 1977-08-12

Family

ID=23244307

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7342451A Expired FR2212607B1 (fr) 1972-12-29 1973-11-20

Country Status (5)

Country Link
US (1) US3843954A (fr)
JP (1) JPS5644515B2 (fr)
DE (1) DE2359153C2 (fr)
FR (1) FR2212607B1 (fr)
GB (1) GB1453708A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749996B2 (fr) * 1973-06-16 1982-10-25
US3986054A (en) * 1973-10-11 1976-10-12 International Business Machines Corporation High voltage integrated driver circuit
US4053798A (en) * 1975-02-20 1977-10-11 Matsushita Electronics Corporation Negative resistance device
JPS53135136A (en) * 1977-04-28 1978-11-25 Shigeru Suzuki Snow melting panel
CH631287A5 (fr) * 1979-03-14 1982-07-30 Centre Electron Horloger Element de memoire non-volatile, electriquement reprogrammable.
US4596002A (en) * 1984-06-25 1986-06-17 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4578779A (en) * 1984-06-25 1986-03-25 International Business Machines Corporation Voltage mode operation scheme for bipolar arrays
US4598390A (en) * 1984-06-25 1986-07-01 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US5598367A (en) * 1995-06-07 1997-01-28 International Business Machines Corporation Trench EPROM
CN1192436C (zh) * 2001-11-02 2005-03-09 力旺电子股份有限公司 可擦写可编程只读存储器的编程操作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364362A (en) * 1963-10-07 1968-01-16 Bunker Ramo Memory selection system
US3286189A (en) * 1964-01-20 1966-11-15 Ithaco High gain field-effect transistor-loaded amplifier
US3375502A (en) * 1964-11-10 1968-03-26 Litton Systems Inc Dynamic memory using controlled semiconductors
US3363115A (en) * 1965-03-29 1968-01-09 Gen Micro Electronics Inc Integral counting circuit with storage capacitors in the conductive path of steering gate circuits
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
US3518635A (en) * 1967-08-22 1970-06-30 Bunker Ramo Digital memory apparatus
US3521141A (en) * 1967-10-30 1970-07-21 Ibm Leakage controlled electric charge switching and storing circuitry
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3629618A (en) * 1970-08-27 1971-12-21 North American Rockwell Field effect transistor single-phase clock signal generator

Also Published As

Publication number Publication date
JPS5644515B2 (fr) 1981-10-20
DE2359153C2 (de) 1983-01-20
DE2359153A1 (de) 1974-07-11
GB1453708A (en) 1976-10-27
FR2212607A1 (fr) 1974-07-26
US3843954A (en) 1974-10-22
JPS4998935A (fr) 1974-09-19

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Legal Events

Date Code Title Description
ST Notification of lapse