DE2352697A1 - Elektrolumineszenz-halbleiterbauteil zum erzeugen von licht verschiedener wellenlaengen - Google Patents
Elektrolumineszenz-halbleiterbauteil zum erzeugen von licht verschiedener wellenlaengenInfo
- Publication number
- DE2352697A1 DE2352697A1 DE19732352697 DE2352697A DE2352697A1 DE 2352697 A1 DE2352697 A1 DE 2352697A1 DE 19732352697 DE19732352697 DE 19732352697 DE 2352697 A DE2352697 A DE 2352697A DE 2352697 A1 DE2352697 A1 DE 2352697A1
- Authority
- DE
- Germany
- Prior art keywords
- contact
- components
- component according
- light
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 229910002601 GaN Inorganic materials 0.000 claims description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims 1
- 239000003086 colorant Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/956—Making multiple wavelength emissive device
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30146872A | 1972-10-27 | 1972-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2352697A1 true DE2352697A1 (de) | 1974-05-22 |
Family
ID=23163508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732352697 Pending DE2352697A1 (de) | 1972-10-27 | 1973-10-20 | Elektrolumineszenz-halbleiterbauteil zum erzeugen von licht verschiedener wellenlaengen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3783353A (enExample) |
| JP (1) | JPS5244716B2 (enExample) |
| CA (1) | CA1008550A (enExample) |
| DE (1) | DE2352697A1 (enExample) |
| FR (1) | FR2204935B1 (enExample) |
| GB (1) | GB1448285A (enExample) |
| IT (1) | IT995575B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3842394A1 (de) * | 1988-12-16 | 1990-06-21 | Total En Dev & Messerschmitt B | Mehrschichtige fluoreszenzvorrichtung |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3922703A (en) * | 1974-04-03 | 1975-11-25 | Rca Corp | Electroluminescent semiconductor device |
| US4011575A (en) * | 1974-07-26 | 1977-03-08 | Litton Systems, Inc. | Light emitting diode array having a plurality of conductive paths for each light emitting diode |
| US3947840A (en) * | 1974-08-16 | 1976-03-30 | Monsanto Company | Integrated semiconductor light-emitting display array |
| US4062035A (en) * | 1975-02-05 | 1977-12-06 | Siemens Aktiengesellschaft | Luminescent diode |
| DE2738329A1 (de) * | 1976-09-06 | 1978-03-09 | Philips Nv | Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung |
| SU773795A1 (ru) * | 1977-04-01 | 1980-10-23 | Предприятие П/Я А-1172 | Светоизлучающий прибор |
| JPS575083A (en) * | 1980-06-13 | 1982-01-11 | Tokyo Shibaura Electric Co | Display unit |
| FR2514566A1 (fr) * | 1982-02-02 | 1983-04-15 | Bagratishvili Givi | Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif |
| US4577207A (en) * | 1982-12-30 | 1986-03-18 | At&T Bell Laboratories | Dual wavelength optical source |
| US4780643A (en) * | 1983-03-30 | 1988-10-25 | Minnesota Mining And Manufacturing Company | Semiconductor electrodes having multicolor luminescence |
| US4857801A (en) * | 1983-04-18 | 1989-08-15 | Litton Systems Canada Limited | Dense LED matrix for high resolution full color video |
| US4559116A (en) * | 1984-07-09 | 1985-12-17 | Minnesota Mining And Manufacturing Company | Process of etching semiconductor electrodes |
| JPS6140081A (ja) * | 1984-07-31 | 1986-02-26 | Sharp Corp | 光半導体装置 |
| US5094970A (en) * | 1988-11-07 | 1992-03-10 | Mitsubishi Denki Kabushiki Kaisha | Method of making a light emitting diode array |
| EP1313153A3 (en) * | 1992-07-23 | 2005-05-04 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| US6548956B2 (en) | 1994-12-13 | 2003-04-15 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US6358631B1 (en) | 1994-12-13 | 2002-03-19 | The Trustees Of Princeton University | Mixed vapor deposited films for electroluminescent devices |
| US5703436A (en) | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
| US6057871A (en) * | 1998-07-10 | 2000-05-02 | Litton Systems, Inc. | Laser marking system and associated microlaser apparatus |
| JP2001217456A (ja) * | 2000-02-03 | 2001-08-10 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子 |
| US6525464B1 (en) * | 2000-09-08 | 2003-02-25 | Unity Opto Technology Co., Ltd. | Stacked light-mixing LED |
| USD471166S1 (en) | 2001-04-06 | 2003-03-04 | Kabushiki Kaisha Toshiba | Light emitting semiconductor device |
| USD547736S1 (en) | 2001-12-28 | 2007-07-31 | Nichia Corporation | Light emitting diode |
| USD499384S1 (en) | 2001-12-28 | 2004-12-07 | Nichia Corporation | Light emitting diode |
| USD516527S1 (en) | 2001-12-28 | 2006-03-07 | Nichia Corporation | Light emitting diode |
| USD534505S1 (en) | 2001-12-28 | 2007-01-02 | Nichia Corporation | Light emitting diode |
| USD565516S1 (en) | 2001-12-28 | 2008-04-01 | Nichia Corporation | Light emitting diode |
| USD519943S1 (en) | 2001-12-28 | 2006-05-02 | Nichia Corporation | Light emitting diode |
| USD482337S1 (en) | 2001-12-28 | 2003-11-18 | Nichia Corporation | Light emitting diode (LED) |
| USD557224S1 (en) | 2001-12-28 | 2007-12-11 | Nichia Corporation | Light emitting diode |
| EP1473771A1 (en) * | 2003-04-14 | 2004-11-03 | Epitech Corporation, Ltd. | Color mixing light emitting diode |
| WO2006049533A2 (en) * | 2004-11-05 | 2006-05-11 | Mikhail Evgenjevich Givargizov | Radiating devices and method for the production thereof |
| US9178121B2 (en) | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
| US8493071B1 (en) * | 2009-10-09 | 2013-07-23 | Xilinx, Inc. | Shorted test structure |
| US8802454B1 (en) | 2011-12-20 | 2014-08-12 | Xilinx, Inc. | Methods of manufacturing a semiconductor structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611069A (en) * | 1969-11-12 | 1971-10-05 | Gen Electric | Multiple color light emitting diodes |
| US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
| US3727115A (en) * | 1972-03-24 | 1973-04-10 | Ibm | Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous |
-
1972
- 1972-10-27 US US00301468A patent/US3783353A/en not_active Expired - Lifetime
-
1973
- 1973-10-03 IT IT29706/73A patent/IT995575B/it active
- 1973-10-16 GB GB4814673A patent/GB1448285A/en not_active Expired
- 1973-10-20 DE DE19732352697 patent/DE2352697A1/de active Pending
- 1973-10-22 CA CA183,919A patent/CA1008550A/en not_active Expired
- 1973-10-25 FR FR7338047A patent/FR2204935B1/fr not_active Expired
- 1973-10-26 JP JP12060673A patent/JPS5244716B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3842394A1 (de) * | 1988-12-16 | 1990-06-21 | Total En Dev & Messerschmitt B | Mehrschichtige fluoreszenzvorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1008550A (en) | 1977-04-12 |
| IT995575B (it) | 1975-11-20 |
| US3783353A (en) | 1974-01-01 |
| JPS4977592A (enExample) | 1974-07-26 |
| FR2204935A1 (enExample) | 1974-05-24 |
| GB1448285A (en) | 1976-09-02 |
| JPS5244716B2 (enExample) | 1977-11-10 |
| FR2204935B1 (enExample) | 1978-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |