FR2204935A1 - - Google Patents

Info

Publication number
FR2204935A1
FR2204935A1 FR7338047A FR7338047A FR2204935A1 FR 2204935 A1 FR2204935 A1 FR 2204935A1 FR 7338047 A FR7338047 A FR 7338047A FR 7338047 A FR7338047 A FR 7338047A FR 2204935 A1 FR2204935 A1 FR 2204935A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7338047A
Other languages
French (fr)
Other versions
FR2204935B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2204935A1 publication Critical patent/FR2204935A1/fr
Application granted granted Critical
Publication of FR2204935B1 publication Critical patent/FR2204935B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/956—Making multiple wavelength emissive device
FR7338047A 1972-10-27 1973-10-25 Expired FR2204935B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30146872A 1972-10-27 1972-10-27

Publications (2)

Publication Number Publication Date
FR2204935A1 true FR2204935A1 (enExample) 1974-05-24
FR2204935B1 FR2204935B1 (enExample) 1978-02-17

Family

ID=23163508

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7338047A Expired FR2204935B1 (enExample) 1972-10-27 1973-10-25

Country Status (7)

Country Link
US (1) US3783353A (enExample)
JP (1) JPS5244716B2 (enExample)
CA (1) CA1008550A (enExample)
DE (1) DE2352697A1 (enExample)
FR (1) FR2204935B1 (enExample)
GB (1) GB1448285A (enExample)
IT (1) IT995575B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
US4011575A (en) * 1974-07-26 1977-03-08 Litton Systems, Inc. Light emitting diode array having a plurality of conductive paths for each light emitting diode
US3947840A (en) * 1974-08-16 1976-03-30 Monsanto Company Integrated semiconductor light-emitting display array
US4062035A (en) * 1975-02-05 1977-12-06 Siemens Aktiengesellschaft Luminescent diode
DE2738329A1 (de) * 1976-09-06 1978-03-09 Philips Nv Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung
SU773795A1 (ru) * 1977-04-01 1980-10-23 Предприятие П/Я А-1172 Светоизлучающий прибор
JPS575083A (en) * 1980-06-13 1982-01-11 Tokyo Shibaura Electric Co Display unit
FR2514566A1 (fr) * 1982-02-02 1983-04-15 Bagratishvili Givi Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif
US4577207A (en) * 1982-12-30 1986-03-18 At&T Bell Laboratories Dual wavelength optical source
US4780643A (en) * 1983-03-30 1988-10-25 Minnesota Mining And Manufacturing Company Semiconductor electrodes having multicolor luminescence
US4857801A (en) * 1983-04-18 1989-08-15 Litton Systems Canada Limited Dense LED matrix for high resolution full color video
US4559116A (en) * 1984-07-09 1985-12-17 Minnesota Mining And Manufacturing Company Process of etching semiconductor electrodes
JPS6140081A (ja) * 1984-07-31 1986-02-26 Sharp Corp 光半導体装置
US5094970A (en) * 1988-11-07 1992-03-10 Mitsubishi Denki Kabushiki Kaisha Method of making a light emitting diode array
DE3842394A1 (de) * 1988-12-16 1990-06-21 Total En Dev & Messerschmitt B Mehrschichtige fluoreszenzvorrichtung
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US6548956B2 (en) 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
US6358631B1 (en) 1994-12-13 2002-03-19 The Trustees Of Princeton University Mixed vapor deposited films for electroluminescent devices
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
US5707745A (en) * 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
US6057871A (en) * 1998-07-10 2000-05-02 Litton Systems, Inc. Laser marking system and associated microlaser apparatus
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
US6525464B1 (en) * 2000-09-08 2003-02-25 Unity Opto Technology Co., Ltd. Stacked light-mixing LED
USD471166S1 (en) 2001-04-06 2003-03-04 Kabushiki Kaisha Toshiba Light emitting semiconductor device
USD547736S1 (en) 2001-12-28 2007-07-31 Nichia Corporation Light emitting diode
USD499384S1 (en) 2001-12-28 2004-12-07 Nichia Corporation Light emitting diode
USD516527S1 (en) 2001-12-28 2006-03-07 Nichia Corporation Light emitting diode
USD534505S1 (en) 2001-12-28 2007-01-02 Nichia Corporation Light emitting diode
USD565516S1 (en) 2001-12-28 2008-04-01 Nichia Corporation Light emitting diode
USD519943S1 (en) 2001-12-28 2006-05-02 Nichia Corporation Light emitting diode
USD482337S1 (en) 2001-12-28 2003-11-18 Nichia Corporation Light emitting diode (LED)
USD557224S1 (en) 2001-12-28 2007-12-11 Nichia Corporation Light emitting diode
EP1473771A1 (en) * 2003-04-14 2004-11-03 Epitech Corporation, Ltd. Color mixing light emitting diode
WO2006049533A2 (en) * 2004-11-05 2006-05-11 Mikhail Evgenjevich Givargizov Radiating devices and method for the production thereof
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
US8493071B1 (en) * 2009-10-09 2013-07-23 Xilinx, Inc. Shorted test structure
US8802454B1 (en) 2011-12-20 2014-08-12 Xilinx, Inc. Methods of manufacturing a semiconductor structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
US3683240A (en) * 1971-07-22 1972-08-08 Rca Corp ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN
US3727115A (en) * 1972-03-24 1973-04-10 Ibm Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
CA1008550A (en) 1977-04-12
DE2352697A1 (de) 1974-05-22
IT995575B (it) 1975-11-20
US3783353A (en) 1974-01-01
JPS4977592A (enExample) 1974-07-26
GB1448285A (en) 1976-09-02
JPS5244716B2 (enExample) 1977-11-10
FR2204935B1 (enExample) 1978-02-17

Similar Documents

Publication Publication Date Title
JPS4952651A (enExample)
AU7471774A (enExample)
JPS4981630A (enExample)
JPS4967337U (enExample)
CH560280A (enExample)
BE805587A (enExample)
BG18670A1 (enExample)
BG18720A1 (enExample)
BG18810A1 (enExample)
BG19032A1 (enExample)
CH267573A4 (enExample)
CH392772A4 (enExample)
CH546001A (enExample)
CH559500A5 (enExample)
CH559902A5 (enExample)
CH560250A5 (enExample)
CH560258A5 (enExample)
CH560330A5 (enExample)
CH561421A5 (enExample)
CH561593A5 (enExample)
CH562468A (enExample)
CH562529A5 (enExample)
CH562707A5 (enExample)
CH563277A5 (enExample)
CH563288A5 (enExample)

Legal Events

Date Code Title Description
ST Notification of lapse