DE2347067A1 - Bipolarer transistor - Google Patents
Bipolarer transistorInfo
- Publication number
- DE2347067A1 DE2347067A1 DE19732347067 DE2347067A DE2347067A1 DE 2347067 A1 DE2347067 A1 DE 2347067A1 DE 19732347067 DE19732347067 DE 19732347067 DE 2347067 A DE2347067 A DE 2347067A DE 2347067 A1 DE2347067 A1 DE 2347067A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- collector
- transistor
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002019 doping agent Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000005589 Calophyllum inophyllum Species 0.000 description 1
- 241001137251 Corvidae Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 235000015108 pies Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29097672A | 1972-09-21 | 1972-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2347067A1 true DE2347067A1 (de) | 1974-03-28 |
Family
ID=23118293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732347067 Pending DE2347067A1 (de) | 1972-09-21 | 1973-09-19 | Bipolarer transistor |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4971873A (enExample) |
| BE (1) | BE804932A (enExample) |
| CA (1) | CA978281A (enExample) |
| DE (1) | DE2347067A1 (enExample) |
| FR (1) | FR2200625B1 (enExample) |
| GB (1) | GB1414066A (enExample) |
| IT (1) | IT993337B (enExample) |
| NL (1) | NL7312775A (enExample) |
| SE (1) | SE391606B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2543736B1 (fr) * | 1983-03-31 | 1986-05-02 | Thomson Csf | Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture |
| JP2559800B2 (ja) * | 1988-03-25 | 1996-12-04 | 株式会社宇宙通信基礎技術研究所 | トランジスタの評価方法 |
-
1973
- 1973-03-30 CA CA167,643A patent/CA978281A/en not_active Expired
- 1973-09-11 SE SE7312357A patent/SE391606B/xx unknown
- 1973-09-17 NL NL7312775A patent/NL7312775A/xx not_active Application Discontinuation
- 1973-09-17 GB GB4346773A patent/GB1414066A/en not_active Expired
- 1973-09-17 BE BE135714A patent/BE804932A/xx unknown
- 1973-09-19 DE DE19732347067 patent/DE2347067A1/de active Pending
- 1973-09-20 IT IT29177/73A patent/IT993337B/it active
- 1973-09-20 FR FR7333797A patent/FR2200625B1/fr not_active Expired
- 1973-09-21 JP JP48106074A patent/JPS4971873A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA978281A (en) | 1975-11-18 |
| JPS4971873A (enExample) | 1974-07-11 |
| IT993337B (it) | 1975-09-30 |
| SE391606B (sv) | 1977-02-21 |
| BE804932A (fr) | 1974-01-16 |
| GB1414066A (en) | 1975-11-12 |
| NL7312775A (enExample) | 1974-03-25 |
| FR2200625B1 (enExample) | 1979-08-31 |
| FR2200625A1 (enExample) | 1974-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |