IT993337B - Transistor a giunzione particolar mente per l impiego in amplificato ri a larga banda - Google Patents

Transistor a giunzione particolar mente per l impiego in amplificato ri a larga banda

Info

Publication number
IT993337B
IT993337B IT29177/73A IT2917773A IT993337B IT 993337 B IT993337 B IT 993337B IT 29177/73 A IT29177/73 A IT 29177/73A IT 2917773 A IT2917773 A IT 2917773A IT 993337 B IT993337 B IT 993337B
Authority
IT
Italy
Prior art keywords
wide band
junction transistor
transistor particularly
amplified wide
amplified
Prior art date
Application number
IT29177/73A
Other languages
English (en)
Italian (it)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT993337B publication Critical patent/IT993337B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
IT29177/73A 1972-09-21 1973-09-20 Transistor a giunzione particolar mente per l impiego in amplificato ri a larga banda IT993337B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29097672A 1972-09-21 1972-09-21

Publications (1)

Publication Number Publication Date
IT993337B true IT993337B (it) 1975-09-30

Family

ID=23118293

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29177/73A IT993337B (it) 1972-09-21 1973-09-20 Transistor a giunzione particolar mente per l impiego in amplificato ri a larga banda

Country Status (9)

Country Link
JP (1) JPS4971873A (enExample)
BE (1) BE804932A (enExample)
CA (1) CA978281A (enExample)
DE (1) DE2347067A1 (enExample)
FR (1) FR2200625B1 (enExample)
GB (1) GB1414066A (enExample)
IT (1) IT993337B (enExample)
NL (1) NL7312775A (enExample)
SE (1) SE391606B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543736B1 (fr) * 1983-03-31 1986-05-02 Thomson Csf Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture
JP2559800B2 (ja) * 1988-03-25 1996-12-04 株式会社宇宙通信基礎技術研究所 トランジスタの評価方法

Also Published As

Publication number Publication date
CA978281A (en) 1975-11-18
JPS4971873A (enExample) 1974-07-11
SE391606B (sv) 1977-02-21
DE2347067A1 (de) 1974-03-28
BE804932A (fr) 1974-01-16
GB1414066A (en) 1975-11-12
NL7312775A (enExample) 1974-03-25
FR2200625B1 (enExample) 1979-08-31
FR2200625A1 (enExample) 1974-04-19

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