DE2335503A1 - Halbleiteranordnung und verfahren zu ihrer herstellung - Google Patents
Halbleiteranordnung und verfahren zu ihrer herstellungInfo
- Publication number
- DE2335503A1 DE2335503A1 DE19732335503 DE2335503A DE2335503A1 DE 2335503 A1 DE2335503 A1 DE 2335503A1 DE 19732335503 DE19732335503 DE 19732335503 DE 2335503 A DE2335503 A DE 2335503A DE 2335503 A1 DE2335503 A1 DE 2335503A1
- Authority
- DE
- Germany
- Prior art keywords
- crystals
- rod
- electrode
- semiconductor
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004020 conductor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 claims description 86
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000000356 contaminant Substances 0.000 claims description 6
- 238000005253 cladding Methods 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 2
- 244000052616 bacterial pathogen Species 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 17
- 230000005669 field effect Effects 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/922—Diffusion along grain boundaries
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47070225A JPS5134268B2 (enrdf_load_stackoverflow) | 1972-07-13 | 1972-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2335503A1 true DE2335503A1 (de) | 1974-01-31 |
Family
ID=13425382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732335503 Pending DE2335503A1 (de) | 1972-07-13 | 1973-07-12 | Halbleiteranordnung und verfahren zu ihrer herstellung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3925803A (enrdf_load_stackoverflow) |
| JP (1) | JPS5134268B2 (enrdf_load_stackoverflow) |
| AT (1) | AT352783B (enrdf_load_stackoverflow) |
| CA (1) | CA984975A (enrdf_load_stackoverflow) |
| DE (1) | DE2335503A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1436255A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2926741A1 (de) * | 1979-07-03 | 1981-01-08 | Licentia Gmbh | Feldeffekt-transistor |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329551B2 (enrdf_load_stackoverflow) * | 1974-08-19 | 1978-08-22 | ||
| US4107724A (en) * | 1974-12-17 | 1978-08-15 | U.S. Philips Corporation | Surface controlled field effect solid state device |
| JPS56116670A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| US4427457A (en) | 1981-04-07 | 1984-01-24 | Oregon Graduate Center | Method of making depthwise-oriented integrated circuit capacitors |
| WO1986007148A1 (en) * | 1985-05-20 | 1986-12-04 | The Regents Of The University Of California | Differential imaging device |
| US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
| US5098862A (en) * | 1990-11-07 | 1992-03-24 | Gte Laboratories Incorporated | Method of making ohmic electrical contact to a matrix of semiconductor material |
| US5332910A (en) * | 1991-03-22 | 1994-07-26 | Hitachi, Ltd. | Semiconductor optical device with nanowhiskers |
| TW386238B (en) | 1997-01-20 | 2000-04-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| DE19840032C1 (de) | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
| US6828609B2 (en) * | 2001-11-09 | 2004-12-07 | Infineon Technologies Ag | High-voltage semiconductor component |
| US6819089B2 (en) * | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
| US7053404B2 (en) * | 2003-12-05 | 2006-05-30 | Stmicroelectronics S.A. | Active semiconductor component with an optimized surface area |
| US20050121691A1 (en) * | 2003-12-05 | 2005-06-09 | Jean-Luc Morand | Active semiconductor component with a reduced surface area |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2954307A (en) * | 1957-03-18 | 1960-09-27 | Shockley William | Grain boundary semiconductor device and method |
| US2979427A (en) * | 1957-03-18 | 1961-04-11 | Shockley William | Semiconductor device and method of making the same |
| NL249774A (enrdf_load_stackoverflow) * | 1959-03-26 | |||
| FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
| US3332810A (en) * | 1963-09-28 | 1967-07-25 | Matsushita Electronics Corp | Silicon rectifier device |
| DE1519869B1 (de) * | 1965-03-18 | 1970-01-15 | Siemens Ag | Verfahren zum Herstellen einer Faserstruktur in einem Koerper aus einer halbleitenden Verbindung |
| US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
-
1972
- 1972-07-13 JP JP47070225A patent/JPS5134268B2/ja not_active Expired
-
1973
- 1973-07-12 GB GB3338973A patent/GB1436255A/en not_active Expired
- 1973-07-12 DE DE19732335503 patent/DE2335503A1/de active Pending
- 1973-07-12 CA CA176,348A patent/CA984975A/en not_active Expired
- 1973-07-12 US US378449A patent/US3925803A/en not_active Expired - Lifetime
- 1973-07-13 AT AT622273A patent/AT352783B/de active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2926741A1 (de) * | 1979-07-03 | 1981-01-08 | Licentia Gmbh | Feldeffekt-transistor |
| US4468683A (en) * | 1979-07-03 | 1984-08-28 | Higratherm Electric Gmbh | High power field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| ATA622273A (de) | 1979-03-15 |
| JPS5134268B2 (enrdf_load_stackoverflow) | 1976-09-25 |
| US3925803A (en) | 1975-12-09 |
| GB1436255A (en) | 1976-05-19 |
| CA984975A (en) | 1976-03-02 |
| JPS4929580A (enrdf_load_stackoverflow) | 1974-03-16 |
| AT352783B (de) | 1979-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHA | Expiration of time for request for examination |