DE2332104A1 - Elektrolumineszierende anordnung und verfahren zu deren herstellung - Google Patents
Elektrolumineszierende anordnung und verfahren zu deren herstellungInfo
- Publication number
- DE2332104A1 DE2332104A1 DE2332104A DE2332104A DE2332104A1 DE 2332104 A1 DE2332104 A1 DE 2332104A1 DE 2332104 A DE2332104 A DE 2332104A DE 2332104 A DE2332104 A DE 2332104A DE 2332104 A1 DE2332104 A1 DE 2332104A1
- Authority
- DE
- Germany
- Prior art keywords
- concentration
- centers
- zone
- diode
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000007704 transition Effects 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000011109 contamination Methods 0.000 claims 1
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 239000000370 acceptor Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7225286A FR2192431B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-07-12 | 1972-07-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2332104A1 true DE2332104A1 (de) | 1974-01-24 |
Family
ID=9101751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2332104A Pending DE2332104A1 (de) | 1972-07-12 | 1973-06-23 | Elektrolumineszierende anordnung und verfahren zu deren herstellung |
Country Status (4)
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3365630A (en) * | 1965-01-29 | 1968-01-23 | Bell Telephone Labor Inc | Electroluminescent gallium phosphide crystal with three dopants |
| US3387163A (en) * | 1965-12-20 | 1968-06-04 | Bell Telephone Labor Inc | Luminescent semiconductor devices including a compensated zone with a substantially balanced concentration of donors and acceptors |
-
1972
- 1972-07-12 FR FR7225286A patent/FR2192431B1/fr not_active Expired
-
1973
- 1973-06-23 DE DE2332104A patent/DE2332104A1/de active Pending
- 1973-07-09 JP JP7738873A patent/JPS4946689A/ja active Pending
- 1973-07-09 IT IT69045/73A patent/IT991759B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2192431B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-09-05 |
| IT991759B (it) | 1975-08-30 |
| JPS4946689A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-05-04 |
| FR2192431A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-02-08 |
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