DE2330720C3 - Verfahren zur Herstellung gasdichter Rohre und Behälter - Google Patents
Verfahren zur Herstellung gasdichter Rohre und BehälterInfo
- Publication number
- DE2330720C3 DE2330720C3 DE19732330720 DE2330720A DE2330720C3 DE 2330720 C3 DE2330720 C3 DE 2330720C3 DE 19732330720 DE19732330720 DE 19732330720 DE 2330720 A DE2330720 A DE 2330720A DE 2330720 C3 DE2330720 C3 DE 2330720C3
- Authority
- DE
- Germany
- Prior art keywords
- containers
- gas
- hydrogen
- temperature
- metals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000008569 process Effects 0.000 title description 4
- 239000000203 mixture Substances 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 238000000197 pyrolysis Methods 0.000 claims description 5
- 239000003039 volatile agent Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 description 29
- 229910052739 hydrogen Inorganic materials 0.000 description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 150000002431 hydrogen Chemical class 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910000103 lithium hydride Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silicon halide Chemical class 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7209294A NL7209294A (enrdf_load_stackoverflow) | 1972-07-01 | 1972-07-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE2330720A1 DE2330720A1 (de) | 1974-01-10 |
DE2330720B2 DE2330720B2 (de) | 1978-05-24 |
DE2330720C3 true DE2330720C3 (de) | 1979-01-18 |
Family
ID=19816451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19732330720 Expired DE2330720C3 (de) | 1972-07-01 | 1973-06-16 | Verfahren zur Herstellung gasdichter Rohre und Behälter |
Country Status (10)
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0024305B1 (de) * | 1979-08-16 | 1985-05-02 | International Business Machines Corporation | Verfahren zum Aufbringen von SiO2-Filmen mittels chemischen Niederschlagens aus der Dampfphase |
DE3441056A1 (de) * | 1984-11-09 | 1986-05-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur verminderung des verschleisses von bei der gasphasenabscheidung von silizium verwendeten quarzteilen |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3200015A (en) * | 1962-09-10 | 1965-08-10 | United Aircraft Corp | Process for coating high temperature alloys |
FR1524841A (fr) * | 1966-06-01 | 1968-05-10 | Siemens Ag | Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces |
US3637423A (en) * | 1969-02-10 | 1972-01-25 | Westinghouse Electric Corp | Pyrolytic deposition of silicon nitride films |
DE1957952A1 (de) * | 1969-11-18 | 1971-05-27 | Siemens Ag | Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren |
-
1972
- 1972-07-01 NL NL7209294A patent/NL7209294A/xx not_active Application Discontinuation
-
1973
- 1973-06-16 DE DE19732330720 patent/DE2330720C3/de not_active Expired
- 1973-06-27 AU AU57405/73A patent/AU5740573A/en not_active Expired
- 1973-06-28 FR FR7323681A patent/FR2190946B1/fr not_active Expired
- 1973-06-28 BR BR477273A patent/BR7304772D0/pt unknown
- 1973-06-28 GB GB3080973A patent/GB1420526A/en not_active Expired
- 1973-06-28 IT IT2604673A patent/IT990832B/it active
- 1973-06-28 SE SE7309131A patent/SE384537B/xx unknown
- 1973-06-28 JP JP48072325A patent/JPS4943880A/ja active Pending
- 1973-06-29 BE BE132987A patent/BE801747A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
SE384537B (sv) | 1976-05-10 |
BR7304772D0 (pt) | 1974-08-15 |
AU5740573A (en) | 1975-01-09 |
NL7209294A (enrdf_load_stackoverflow) | 1974-01-03 |
JPS4943880A (enrdf_load_stackoverflow) | 1974-04-25 |
DE2330720A1 (de) | 1974-01-10 |
FR2190946B1 (enrdf_load_stackoverflow) | 1977-05-13 |
FR2190946A1 (enrdf_load_stackoverflow) | 1974-02-01 |
GB1420526A (en) | 1976-01-07 |
IT990832B (it) | 1975-07-10 |
BE801747A (fr) | 1974-01-02 |
DE2330720B2 (de) | 1978-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C3 | Grant after two publication steps (3rd publication) | ||
8339 | Ceased/non-payment of the annual fee |