FR1524841A - Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces - Google Patents

Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces

Info

Publication number
FR1524841A
FR1524841A FR108407A FR108407A FR1524841A FR 1524841 A FR1524841 A FR 1524841A FR 108407 A FR108407 A FR 108407A FR 108407 A FR108407 A FR 108407A FR 1524841 A FR1524841 A FR 1524841A
Authority
FR
France
Prior art keywords
preparation
silicon nitride
thin films
attackable
chemically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR108407A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to FR108407A priority Critical patent/FR1524841A/fr
Application granted granted Critical
Publication of FR1524841A publication Critical patent/FR1524841A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR108407A 1966-06-01 1967-05-30 Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces Expired FR1524841A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR108407A FR1524841A (fr) 1966-06-01 1967-05-30 Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0104095 1966-06-01
FR108407A FR1524841A (fr) 1966-06-01 1967-05-30 Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces

Publications (1)

Publication Number Publication Date
FR1524841A true FR1524841A (fr) 1968-05-10

Family

ID=25998479

Family Applications (1)

Application Number Title Priority Date Filing Date
FR108407A Expired FR1524841A (fr) 1966-06-01 1967-05-30 Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces

Country Status (1)

Country Link
FR (1) FR1524841A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2190946A1 (fr) * 1972-07-01 1974-02-01 Philips Nv
US4118539A (en) * 1976-01-13 1978-10-03 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Super hard-highly pure silicon nitrides having a preferred crystal face orientation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2190946A1 (fr) * 1972-07-01 1974-02-01 Philips Nv
US4118539A (en) * 1976-01-13 1978-10-03 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Super hard-highly pure silicon nitrides having a preferred crystal face orientation
US4224296A (en) * 1976-01-13 1980-09-23 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same
US4312924A (en) * 1976-01-13 1982-01-26 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Super hard highly pure silicon nitrides

Similar Documents

Publication Publication Date Title
FR1435786A (fr) Procédé pour la préparation de jonctions p-n dans le silicium
FR1514707A (fr) Procédé de préparation de pellicules de polymères d'oléfines
FR1515581A (fr) Procédé pour la préparation d'hydrures d'aluminium-sodium
FR1524841A (fr) Procédé pour la préparation de nitrure de silicium attaquable chimiquement sous forme de couches minces
FR1485854A (fr) Procédé pour la préparation de cyclohexylamines substituées
FR1508140A (fr) Procédé pour la préparation de diamines
FR1509368A (fr) Procédé pour la préparation d'hydrindacènes
CH451339A (fr) Procédé pour l'activation de pellicules minces semi-conductrices
FR1517452A (fr) Procédé pour produire des matières semiconductrices pures telles que du silicium et matières semiconductrices obtenues par le procédé
CH468980A (fr) Procédé pour la préparation d'amines polynucléaires sulfonées
CH461463A (fr) Procédé de préparation d'éthers cyano éthyliques des propanediols-1-3 substitués en position 2
FR1531929A (fr) Procédé pour la préparation d'alpha-6-désoxytétracyclines
FR1511342A (fr) Procédé pour la préparation d'alpha-nitro-cétones
FR1518386A (fr) Procédé de préparation d'aza-dioxa-bicyclo-alcanes
IT958962B (it) Procedimento per la preparazione di pellicole sottili moncocristal line particolarmente adatte per le iperfrequenze
FR1511538A (fr) Procédé pour la préparation de dibromobutènes en régime continu
FR1536842A (fr) Cristaux de carbure de silicium et procédé pour leur préparation
FR1480305A (fr) Procédé pour la préparation du bore pur
FR1503418A (fr) Procédé pour la préparation de phénéthylamines
FR1344182A (fr) Procédé de réalisation de scintillateurs sous forme de films minces
FR1511207A (fr) Procédé pour la préparation de 10 alpha-stéroïdes
FR1547243A (fr) Procédé pour la préparation de l'hydrazine
FR1540727A (fr) Procédé pour la préparation des tritylamines
FR1509315A (fr) Procédé pour la préparation des stéroïdo-oxazolines
FR1531889A (fr) Procédé de préparation d'amino-anthraquinones