DE2323592C2 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE2323592C2
DE2323592C2 DE2323592A DE2323592A DE2323592C2 DE 2323592 C2 DE2323592 C2 DE 2323592C2 DE 2323592 A DE2323592 A DE 2323592A DE 2323592 A DE2323592 A DE 2323592A DE 2323592 C2 DE2323592 C2 DE 2323592C2
Authority
DE
Germany
Prior art keywords
zone
thyristor
doped
base
individual zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2323592A
Other languages
German (de)
English (en)
Other versions
DE2323592A1 (de
Inventor
Jozef Dr. Staretschwil Cornu
Alois Dr. Nussbaumen Marek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH529173A external-priority patent/CH557092A/de
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE2323592A1 publication Critical patent/DE2323592A1/de
Application granted granted Critical
Publication of DE2323592C2 publication Critical patent/DE2323592C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE2323592A 1972-06-09 1973-05-10 Thyristor Expired DE2323592C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH858972 1972-06-09
CH529173A CH557092A (de) 1973-04-13 1973-04-13 Halbleiterbauelement.

Publications (2)

Publication Number Publication Date
DE2323592A1 DE2323592A1 (de) 1974-01-03
DE2323592C2 true DE2323592C2 (de) 1981-09-17

Family

ID=25697398

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2323592A Expired DE2323592C2 (de) 1972-06-09 1973-05-10 Thyristor
DE19737317598U Expired DE7317598U (de) 1972-06-09 1973-05-10 Halbleiterbauelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19737317598U Expired DE7317598U (de) 1972-06-09 1973-05-10 Halbleiterbauelement

Country Status (4)

Country Link
US (1) US3984858A (enExample)
JP (1) JPS4951884A (enExample)
DE (2) DE2323592C2 (enExample)
FR (1) FR2188313B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
JPS5250175A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
JPS5250177A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Process for production of electrostatic induction type thyristor
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor
US4410902A (en) * 1981-03-23 1983-10-18 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier semiconductor device
DE3117202A1 (de) * 1981-04-30 1982-11-18 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum einstellen der lebensdauer der minoritaetsladungstraeger in halbleiterschaltern mit protonenstrahlen
EP0074133B1 (de) * 1981-08-25 1987-01-28 BBC Aktiengesellschaft Brown, Boveri & Cie. Thyristor
JPS5839070A (ja) * 1981-08-31 1983-03-07 Toshiba Corp 半導体装置
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor
JPS5896764A (ja) * 1981-12-03 1983-06-08 Toshiba Corp ゲ−トタ−ンオフサイリスタ
GB2132016B (en) * 1982-12-07 1986-06-25 Kokusai Denshin Denwa Co Ltd A semiconductor device
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
US6604503B2 (en) 1998-06-15 2003-08-12 M.R. Engines Ltd. Rotary machine
EP1145329A2 (en) * 1999-10-20 2001-10-17 Koninklijke Philips Electronics N.V. Semiconductor pn-junction diode, method of making the same and electronic circuit comprising the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (enExample) * 1960-12-20
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
SE323452B (enExample) * 1964-05-15 1970-05-04 Asea Ab
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
DE1274245B (de) * 1965-06-15 1968-08-01 Siemens Ag Halbleiter-Gleichrichterdiode fuer Starkstrom
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3855611A (en) * 1973-04-11 1974-12-17 Rca Corp Thyristor devices

Also Published As

Publication number Publication date
FR2188313A1 (enExample) 1974-01-18
FR2188313B1 (enExample) 1977-02-11
JPS4951884A (enExample) 1974-05-20
DE2323592A1 (de) 1974-01-03
US3984858A (en) 1976-10-05
DE7317598U (de) 1974-04-04

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Legal Events

Date Code Title Description
OF Willingness to grant licences before publication of examined application
OGA New person/name/address of the applicant
OD Request for examination
D2 Grant after examination
8339 Ceased/non-payment of the annual fee