NL272752A - - Google Patents
Info
- Publication number
- NL272752A NL272752A NL272752DA NL272752A NL 272752 A NL272752 A NL 272752A NL 272752D A NL272752D A NL 272752DA NL 272752 A NL272752 A NL 272752A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7726660A | 1960-12-20 | 1960-12-20 | |
| US303464A US3231796A (en) | 1960-12-20 | 1963-08-01 | Pnpn semiconductor switch with predetermined forward breakover and reverse breakdownvoltages |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL272752A true NL272752A (enExample) |
Family
ID=26759089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL272752D NL272752A (enExample) | 1960-12-20 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3231796A (enExample) |
| DE (1) | DE1292255B (enExample) |
| GB (1) | GB996299A (enExample) |
| NL (1) | NL272752A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1400724A (fr) * | 1963-06-04 | 1965-05-28 | Gen Electric | Perfectionnements aux dispositifs semiconducteurs de commutation et à leur procédé de fabrication |
| DE1274245B (de) * | 1965-06-15 | 1968-08-01 | Siemens Ag | Halbleiter-Gleichrichterdiode fuer Starkstrom |
| US3414779A (en) * | 1965-12-08 | 1968-12-03 | Northern Electric Co | Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
| DE2323592C2 (de) * | 1972-06-09 | 1981-09-17 | BBC AG Brown, Boveri & Cie., Baden, Aargau | Thyristor |
| US3953254A (en) * | 1972-11-07 | 1976-04-27 | Thomson-Csf | Method of producing temperature compensated reference diodes utilizing selective epitaxial growth |
| US3855611A (en) * | 1973-04-11 | 1974-12-17 | Rca Corp | Thyristor devices |
| CH580339A5 (enExample) * | 1974-12-23 | 1976-09-30 | Bbc Brown Boveri & Cie | |
| JPS5230389A (en) * | 1975-09-03 | 1977-03-08 | Hitachi Ltd | Thyristor |
| US4750025A (en) * | 1981-12-04 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Depletion stop transistor |
| US5602404A (en) * | 1995-01-18 | 1997-02-11 | National Semiconductor Corporation | Low voltage triggering silicon controlled rectifier structures for ESD protection |
| JP6026418B2 (ja) * | 2010-09-27 | 2016-11-16 | アーベーベー・テヒノロギー・アーゲー | バイポーラノンパンチスルー電力半導体デバイス |
| US9935206B2 (en) * | 2013-05-10 | 2018-04-03 | Ixys Corporation | Packaged overvoltage protection circuit for triggering thyristors |
| US8878236B1 (en) * | 2013-05-10 | 2014-11-04 | Ixys Corporation | High voltage breakover diode having comparable forward breakover and reverse breakdown voltages |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL99632C (enExample) * | 1955-11-22 | |||
| NL225050A (enExample) * | 1957-02-26 | |||
| DE1079212B (de) * | 1958-06-30 | 1960-04-07 | Siemens Ag | Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode |
| NL246349A (enExample) * | 1958-12-15 | |||
| US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
| US3152928A (en) * | 1961-05-18 | 1964-10-13 | Clevite Corp | Semiconductor device and method |
-
0
- NL NL272752D patent/NL272752A/xx unknown
-
1961
- 1961-12-06 DE DEM51083A patent/DE1292255B/de active Pending
- 1961-12-18 GB GB45316/61A patent/GB996299A/en not_active Expired
-
1963
- 1963-08-01 US US303464A patent/US3231796A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1292255B (de) | 1969-04-10 |
| GB996299A (en) | 1965-06-23 |
| US3231796A (en) | 1966-01-25 |