NL272752A - - Google Patents
Info
- Publication number
- NL272752A NL272752A NL272752DA NL272752A NL 272752 A NL272752 A NL 272752A NL 272752D A NL272752D A NL 272752DA NL 272752 A NL272752 A NL 272752A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7726660A | 1960-12-20 | 1960-12-20 | |
| US303464A US3231796A (en) | 1960-12-20 | 1963-08-01 | Pnpn semiconductor switch with predetermined forward breakover and reverse breakdownvoltages |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL272752A true NL272752A (xx) |
Family
ID=26759089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL272752D NL272752A (xx) | 1960-12-20 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3231796A (xx) |
| DE (1) | DE1292255B (xx) |
| GB (1) | GB996299A (xx) |
| NL (1) | NL272752A (xx) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1464946A1 (de) * | 1963-06-04 | 1969-02-20 | Gen Electric | Halbleiterschalter |
| DE1274245B (de) * | 1965-06-15 | 1968-08-01 | Siemens Ag | Halbleiter-Gleichrichterdiode fuer Starkstrom |
| US3414779A (en) * | 1965-12-08 | 1968-12-03 | Northern Electric Co | Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
| DE7317598U (de) * | 1972-06-09 | 1974-04-04 | Bbc Ag | Halbleiterbauelement |
| US3953254A (en) * | 1972-11-07 | 1976-04-27 | Thomson-Csf | Method of producing temperature compensated reference diodes utilizing selective epitaxial growth |
| US3855611A (en) * | 1973-04-11 | 1974-12-17 | Rca Corp | Thyristor devices |
| CH580339A5 (xx) * | 1974-12-23 | 1976-09-30 | Bbc Brown Boveri & Cie | |
| JPS5230389A (en) * | 1975-09-03 | 1977-03-08 | Hitachi Ltd | Thyristor |
| US4750025A (en) * | 1981-12-04 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Depletion stop transistor |
| US5602404A (en) * | 1995-01-18 | 1997-02-11 | National Semiconductor Corporation | Low voltage triggering silicon controlled rectifier structures for ESD protection |
| GB2497245B (en) * | 2010-09-27 | 2015-04-01 | Abb Technology Ag | Bipolar non-punch-through power semiconductor device |
| US9935206B2 (en) * | 2013-05-10 | 2018-04-03 | Ixys Corporation | Packaged overvoltage protection circuit for triggering thyristors |
| US8878236B1 (en) * | 2013-05-10 | 2014-11-04 | Ixys Corporation | High voltage breakover diode having comparable forward breakover and reverse breakdown voltages |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL99632C (xx) * | 1955-11-22 | |||
| NL112062C (xx) * | 1957-02-26 | |||
| DE1079212B (de) * | 1958-06-30 | 1960-04-07 | Siemens Ag | Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode |
| NL246349A (xx) * | 1958-12-15 | |||
| US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
| US3152928A (en) * | 1961-05-18 | 1964-10-13 | Clevite Corp | Semiconductor device and method |
-
0
- NL NL272752D patent/NL272752A/xx unknown
-
1961
- 1961-12-06 DE DEM51083A patent/DE1292255B/de active Pending
- 1961-12-18 GB GB45316/61A patent/GB996299A/en not_active Expired
-
1963
- 1963-08-01 US US303464A patent/US3231796A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3231796A (en) | 1966-01-25 |
| GB996299A (en) | 1965-06-23 |
| DE1292255B (de) | 1969-04-10 |