JPS4951884A - - Google Patents
Info
- Publication number
- JPS4951884A JPS4951884A JP48059919A JP5991973A JPS4951884A JP S4951884 A JPS4951884 A JP S4951884A JP 48059919 A JP48059919 A JP 48059919A JP 5991973 A JP5991973 A JP 5991973A JP S4951884 A JPS4951884 A JP S4951884A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH858972 | 1972-06-09 | ||
CH529173A CH557092A (de) | 1973-04-13 | 1973-04-13 | Halbleiterbauelement. |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4951884A true JPS4951884A (ja) | 1974-05-20 |
Family
ID=25697398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP48059919A Pending JPS4951884A (ja) | 1972-06-09 | 1973-05-30 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3984858A (ja) |
JP (1) | JPS4951884A (ja) |
DE (2) | DE7317598U (ja) |
FR (1) | FR2188313B1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5250175A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS5250177A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Process for production of electrostatic induction type thyristor |
JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS5896764A (ja) * | 1981-12-03 | 1983-06-08 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
US4410902A (en) * | 1981-03-23 | 1983-10-18 | The United States Of America As Represented By The Secretary Of The Army | Planar doped barrier semiconductor device |
DE3117202A1 (de) * | 1981-04-30 | 1982-11-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum einstellen der lebensdauer der minoritaetsladungstraeger in halbleiterschaltern mit protonenstrahlen |
EP0074133B1 (de) * | 1981-08-25 | 1987-01-28 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Thyristor |
JPS5839070A (ja) * | 1981-08-31 | 1983-03-07 | Toshiba Corp | 半導体装置 |
US4442445A (en) * | 1981-11-23 | 1984-04-10 | The United States Of America As Represented By The Secretary Of The Army | Planar doped barrier gate field effect transistor |
GB2132016B (en) * | 1982-12-07 | 1986-06-25 | Kokusai Denshin Denwa Co Ltd | A semiconductor device |
US4794440A (en) * | 1983-05-25 | 1988-12-27 | American Telephone And Telegraph Company, At&T Bell Laboratories | Heterojunction bipolar transistor |
CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
US6604503B2 (en) | 1998-06-15 | 2003-08-12 | M.R. Engines Ltd. | Rotary machine |
EP1145329A2 (en) * | 1999-10-20 | 2001-10-17 | Koninklijke Philips Electronics N.V. | Semiconductor pn-junction diode, method of making the same and electronic circuit comprising the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3470036A (en) * | 1964-05-15 | 1969-09-30 | Asea Ab | Rectifying semi-conductor body |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL272752A (ja) * | 1960-12-20 | |||
US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
GB1039915A (en) * | 1964-05-25 | 1966-08-24 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
US3398334A (en) * | 1964-11-23 | 1968-08-20 | Itt | Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions |
DE1274245B (de) * | 1965-06-15 | 1968-08-01 | Siemens Ag | Halbleiter-Gleichrichterdiode fuer Starkstrom |
US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
US3855611A (en) * | 1973-04-11 | 1974-12-17 | Rca Corp | Thyristor devices |
-
1973
- 1973-05-10 DE DE19737317598U patent/DE7317598U/de not_active Expired
- 1973-05-10 DE DE2323592A patent/DE2323592C2/de not_active Expired
- 1973-05-22 US US05/363,165 patent/US3984858A/en not_active Expired - Lifetime
- 1973-05-30 JP JP48059919A patent/JPS4951884A/ja active Pending
- 1973-06-06 FR FR7320513A patent/FR2188313B1/fr not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3470036A (en) * | 1964-05-15 | 1969-09-30 | Asea Ab | Rectifying semi-conductor body |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5250175A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS5250177A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Process for production of electrostatic induction type thyristor |
JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS5632794B2 (ja) * | 1975-10-20 | 1981-07-30 | ||
JPS574100B2 (ja) * | 1975-10-20 | 1982-01-25 | ||
JPS6132828B2 (ja) * | 1975-10-20 | 1986-07-29 | Handotai Kenkyu Shinkokai | |
JPS5896764A (ja) * | 1981-12-03 | 1983-06-08 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ |
Also Published As
Publication number | Publication date |
---|---|
DE2323592C2 (de) | 1981-09-17 |
FR2188313B1 (ja) | 1977-02-11 |
US3984858A (en) | 1976-10-05 |
DE7317598U (de) | 1974-04-04 |
FR2188313A1 (ja) | 1974-01-18 |
DE2323592A1 (de) | 1974-01-03 |