DE2316599A1 - Hochspannungs-halbleiteranordnung - Google Patents

Hochspannungs-halbleiteranordnung

Info

Publication number
DE2316599A1
DE2316599A1 DE2316599A DE2316599A DE2316599A1 DE 2316599 A1 DE2316599 A1 DE 2316599A1 DE 2316599 A DE2316599 A DE 2316599A DE 2316599 A DE2316599 A DE 2316599A DE 2316599 A1 DE2316599 A1 DE 2316599A1
Authority
DE
Germany
Prior art keywords
layer
resistance
area
passivation layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2316599A
Other languages
German (de)
English (en)
Inventor
Lowell Eugene Clark
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE2316599A1 publication Critical patent/DE2316599A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H10W74/131—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE2316599A 1972-04-03 1973-04-03 Hochspannungs-halbleiteranordnung Pending DE2316599A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24063472A 1972-04-03 1972-04-03

Publications (1)

Publication Number Publication Date
DE2316599A1 true DE2316599A1 (de) 1973-10-18

Family

ID=22907317

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2316599A Pending DE2316599A1 (de) 1972-04-03 1973-04-03 Hochspannungs-halbleiteranordnung
DE19737312557U Expired DE7312557U (de) 1972-04-03 1973-04-03 Hochspannungs-halbleiteranordnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19737312557U Expired DE7312557U (de) 1972-04-03 1973-04-03 Hochspannungs-halbleiteranordnung

Country Status (3)

Country Link
JP (1) JPS4917686A (enExample)
DE (2) DE2316599A1 (enExample)
FR (1) FR2178932A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014107287A1 (de) * 2014-05-23 2015-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Überbrückung eines elektrischen Energiespeichers
EP3798786A2 (en) * 2019-09-03 2021-03-31 Renesas Electronics America Inc. Low-voltage collector-free bandgap voltage generator device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541431B2 (enExample) * 1973-12-26 1979-01-24
JPS5598856A (en) * 1979-01-24 1980-07-28 Mitsubishi Electric Corp Method of fabricating semiconductor device
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
JPS6351533A (ja) * 1986-08-21 1988-03-04 Mitsubishi Heavy Ind Ltd パワ−シヨベル
JPH07175063A (ja) * 1994-08-08 1995-07-14 Seiko Epson Corp 投写型表示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014107287A1 (de) * 2014-05-23 2015-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Überbrückung eines elektrischen Energiespeichers
US10186734B2 (en) 2014-05-23 2019-01-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device and method for bridging an electrical energy storage
EP3798786A2 (en) * 2019-09-03 2021-03-31 Renesas Electronics America Inc. Low-voltage collector-free bandgap voltage generator device
US11921533B2 (en) 2019-09-03 2024-03-05 Renesas Electronics America Inc. Low-voltage collector-free bandgap voltage generator device

Also Published As

Publication number Publication date
DE7312557U (de) 1973-08-16
FR2178932A1 (enExample) 1973-11-16
JPS4917686A (enExample) 1974-02-16

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