DE2300989A1 - Verfahren zum zuechten von kristallen hoher perfektion aus konvektionsfreier schmelzfluessiger substanzmasse - Google Patents

Verfahren zum zuechten von kristallen hoher perfektion aus konvektionsfreier schmelzfluessiger substanzmasse

Info

Publication number
DE2300989A1
DE2300989A1 DE2300989A DE2300989A DE2300989A1 DE 2300989 A1 DE2300989 A1 DE 2300989A1 DE 2300989 A DE2300989 A DE 2300989A DE 2300989 A DE2300989 A DE 2300989A DE 2300989 A1 DE2300989 A1 DE 2300989A1
Authority
DE
Germany
Prior art keywords
medium
liquid
substance
substance mass
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2300989A
Other languages
German (de)
English (en)
Inventor
Waldemar Bluethgen
Guenter Dr Nitschmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ernst Leitz Wetzlar GmbH
Original Assignee
Ernst Leitz Wetzlar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ernst Leitz Wetzlar GmbH filed Critical Ernst Leitz Wetzlar GmbH
Priority to DE2300989A priority Critical patent/DE2300989A1/de
Priority to CH1770873A priority patent/CH567870A5/xx
Priority to NL7317718A priority patent/NL7317718A/xx
Priority to JP48144788A priority patent/JPS4998784A/ja
Priority to GB20874A priority patent/GB1427501A/en
Priority to FR7400625A priority patent/FR2322635A1/fr
Publication of DE2300989A1 publication Critical patent/DE2300989A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE2300989A 1973-01-10 1973-01-10 Verfahren zum zuechten von kristallen hoher perfektion aus konvektionsfreier schmelzfluessiger substanzmasse Pending DE2300989A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE2300989A DE2300989A1 (de) 1973-01-10 1973-01-10 Verfahren zum zuechten von kristallen hoher perfektion aus konvektionsfreier schmelzfluessiger substanzmasse
CH1770873A CH567870A5 (enrdf_load_stackoverflow) 1973-01-10 1973-12-18
NL7317718A NL7317718A (enrdf_load_stackoverflow) 1973-01-10 1973-12-27
JP48144788A JPS4998784A (enrdf_load_stackoverflow) 1973-01-10 1973-12-28
GB20874A GB1427501A (en) 1973-01-10 1974-01-03 Crystal growing
FR7400625A FR2322635A1 (fr) 1973-01-10 1974-01-08 Procede de production de cristaux de haute perfection a partir d'une masse de substance fondue exempte de convection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2300989A DE2300989A1 (de) 1973-01-10 1973-01-10 Verfahren zum zuechten von kristallen hoher perfektion aus konvektionsfreier schmelzfluessiger substanzmasse

Publications (1)

Publication Number Publication Date
DE2300989A1 true DE2300989A1 (de) 1974-07-11

Family

ID=5868653

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2300989A Pending DE2300989A1 (de) 1973-01-10 1973-01-10 Verfahren zum zuechten von kristallen hoher perfektion aus konvektionsfreier schmelzfluessiger substanzmasse

Country Status (6)

Country Link
JP (1) JPS4998784A (enrdf_load_stackoverflow)
CH (1) CH567870A5 (enrdf_load_stackoverflow)
DE (1) DE2300989A1 (enrdf_load_stackoverflow)
FR (1) FR2322635A1 (enrdf_load_stackoverflow)
GB (1) GB1427501A (enrdf_load_stackoverflow)
NL (1) NL7317718A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983003431A1 (en) * 1982-03-30 1983-10-13 Paul Otto Knischka Gradient process for growing crystals in liquid media
FR2549751A1 (fr) * 1983-07-29 1985-02-01 Commissariat Energie Atomique Procede d'elaboration d'un materiau par moulage
FR2549744A1 (fr) * 1983-07-29 1985-02-01 Commissariat Energie Atomique Procede de preparation de formes metalliques ou semi-metalliques minces ou massives, notamment de silicium
WO1991011546A1 (en) * 1990-02-02 1991-08-08 E.I. Du Pont De Nemours And Company Doped crystalline compositions and a method for preparation thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983003431A1 (en) * 1982-03-30 1983-10-13 Paul Otto Knischka Gradient process for growing crystals in liquid media
US4525171A (en) * 1982-03-30 1985-06-25 Knischka Rubine Gesellschaft M.B.H Gradient process of growing crystals from liquid media
FR2549751A1 (fr) * 1983-07-29 1985-02-01 Commissariat Energie Atomique Procede d'elaboration d'un materiau par moulage
FR2549744A1 (fr) * 1983-07-29 1985-02-01 Commissariat Energie Atomique Procede de preparation de formes metalliques ou semi-metalliques minces ou massives, notamment de silicium
EP0136196A1 (fr) * 1983-07-29 1985-04-03 Commissariat à l'Energie Atomique Procédé de préparation de formes métalliques ou semimétalliques minces ou massives, notamment de silicium
US4617084A (en) * 1983-07-29 1986-10-14 Commissariat A L'energie Atomique Process for the production of metallic or semimetallic shaped elements
WO1991011546A1 (en) * 1990-02-02 1991-08-08 E.I. Du Pont De Nemours And Company Doped crystalline compositions and a method for preparation thereof

Also Published As

Publication number Publication date
GB1427501A (en) 1976-03-10
NL7317718A (enrdf_load_stackoverflow) 1974-07-12
FR2322635A1 (fr) 1977-04-01
JPS4998784A (enrdf_load_stackoverflow) 1974-09-18
CH567870A5 (enrdf_load_stackoverflow) 1975-10-15

Similar Documents

Publication Publication Date Title
DE3035267A1 (de) Verfahren zur verfestigung von fluessigen materialien
DE2643793C2 (de) Verfahren zum Züchten von einkristallinem Seltenerdmetall-Eisen-Granat
DE69217184T2 (de) Verfahren zur Herstellung eines Kohlendioxidklathrats
DE2624357C2 (enrdf_load_stackoverflow)
DE68907184T2 (de) Verfahren zur zuechtung von kristallen und tiegel dafuer.
DE3781016T2 (de) Verfahren zur zuechtung eines multikomponent-kristalls.
DE2324376C2 (de) Gerichtet erstarrtes Superlegierungsgußstück
DE2300989A1 (de) Verfahren zum zuechten von kristallen hoher perfektion aus konvektionsfreier schmelzfluessiger substanzmasse
DE102020127337A1 (de) Halbleiterkristallwachstumsvorrichtung
DE1533475B1 (de) Verfahren zur Herstellung parallel zueinander ausgerichteter Stengelkristalle
DE2425747C3 (de) Verfahren zum Herstellen epitaktischer Schichten auf einem Substrat mittels Flüssigphasen-Epitaxie
EP0023063A1 (de) Einkristall auf der Basis von Seltenerdmetall-Gallium-Granat und magnetische Dünnschichtanordnung mit einem monokristallinen Granat-Substrat
DE2038875A1 (de) Verfahren zur Herstellung gewachsener Mischkristalle
DE3644746A1 (de) Verfahren und vorrichtung zum zuechten von kristallen
DE1251721B (de) Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
DE60100148T2 (de) Verfahren zur Herstellung eines Verbindungshalbleiter-Einkristalles
DE1667604B1 (de) Verfahren zur herstellung von kristallinem cadmiumtellurid
DE68912686T2 (de) Verfahren zur Herstellung eines Einkristalls aus einer Halbleiter-Verbindung.
DE2111946C3 (de) Verfahren und Vorrichtung zum epitaktischen Aufwachsenlassen eines Kristalls auf einer Unterlage
DE2144828A1 (de) Verfahren zur Bildung einer GaP Schicht auf einem Si-Träger
DE2221574A1 (de) Verfahren zur Herstellung eines Einkristalls
DE10324451A1 (de) Verfahren zum Züchten optischer Fluorit-Einkristalle
DE2025376A1 (de) Einkristall-Züchtungsverfahren für Bariumnatriumniobat und verwandte Materialien
DE2336234A1 (de) Anordnung und verfahren zum ziehen eines einkristalls
Brezina et al. Crystal Growth of 2‐Cyclooctylamino‐5‐Nitropyridine (COANP) and 2‐(N‐(L)‐Prolinol‐5‐Nitropyridine (PNP) from TMS Gels