GB1427501A - Crystal growing - Google Patents

Crystal growing

Info

Publication number
GB1427501A
GB1427501A GB20874A GB20874A GB1427501A GB 1427501 A GB1427501 A GB 1427501A GB 20874 A GB20874 A GB 20874A GB 20874 A GB20874 A GB 20874A GB 1427501 A GB1427501 A GB 1427501A
Authority
GB
United Kingdom
Prior art keywords
crystal
molten
mass
medium
liquid medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20874A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ernst Leitz Wetzlar GmbH
Original Assignee
Ernst Leitz Wetzlar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ernst Leitz Wetzlar GmbH filed Critical Ernst Leitz Wetzlar GmbH
Publication of GB1427501A publication Critical patent/GB1427501A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

1427501 Crystal growing ERNST LEITZ GmbH 3 Jan 1974 [10 Jan 1973] 00208/74 Heading B1S A method of growing a single crystal from a molten, single component crystallisable material comprises placing a coherent mass of the molten material in a liquid medium, which is different from and immiscible with the molten material and which has substantially the same specific gravity as the material thereby to simulate a condition of weightlessness in the material mass and to render the material free of convection, placing a seed crystal of the crystallise material in contact with the material mass and continuously drawing the seed crystal away from the material mass to form a single, continuous crystal of the material. It is advantageous if the density ratio between the molten material and the liquid medium is chosen so that the material swims in the liquid medium rather than floats or sinks. It may be expedient to choose a medium which reacts in a specific predetermined manner with the crystallisable material e.g. to incorporate dopants. The medium may be an inorganic or organic liquid, solution or melt. An example of a crystal produceable by the method is phenyl salicylate.
GB20874A 1973-01-10 1974-01-03 Crystal growing Expired GB1427501A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2300989A DE2300989A1 (en) 1973-01-10 1973-01-10 PROCESS FOR GROWING CRYSTALS OF HIGH PERFECTION FROM CONVECTION-FREE MELT SUBSTANCE

Publications (1)

Publication Number Publication Date
GB1427501A true GB1427501A (en) 1976-03-10

Family

ID=5868653

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20874A Expired GB1427501A (en) 1973-01-10 1974-01-03 Crystal growing

Country Status (6)

Country Link
JP (1) JPS4998784A (en)
CH (1) CH567870A5 (en)
DE (1) DE2300989A1 (en)
FR (1) FR2322635A1 (en)
GB (1) GB1427501A (en)
NL (1) NL7317718A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT382900B (en) * 1982-03-30 1987-04-27 Knischka Rubine Gmbh GRADIENT METHOD FOR GROWING CRYSTALS FROM LIQUID MEDIA
FR2549751A1 (en) * 1983-07-29 1985-02-01 Commissariat Energie Atomique PROCESS FOR PRODUCING A MATERIAL BY MOLDING
FR2549744B1 (en) * 1983-07-29 1985-09-20 Commissariat Energie Atomique PROCESS FOR THE PREPARATION OF THIN OR MASSIVE METAL OR SEMI-METAL FORMS, ESPECIALLY SILICON
US5084206A (en) * 1990-02-02 1992-01-28 E. I. Du Pont De Nemours And Company Doped crystalline compositions and a method for preparation thereof

Also Published As

Publication number Publication date
NL7317718A (en) 1974-07-12
JPS4998784A (en) 1974-09-18
CH567870A5 (en) 1975-10-15
DE2300989A1 (en) 1974-07-11
FR2322635A1 (en) 1977-04-01

Similar Documents

Publication Publication Date Title
BE855182A (en) METHOD AND DEVICE FOR THE PRODUCTION OF URANIUM BIOXIDE POWDER WITH CASTABILITY CHARACTERISTICS
KR890006836A (en) alloy
ES328506A1 (en) A method of production of a thermoplastic film. (Machine-translation by Google Translate, not legally binding)
IT999193B (en) CONTROL DEVICE WITH REGULATED SPEED MODULATED BY TEMPERATURE AND CONTROL MECHANISM FOR IT
GB1427501A (en) Crystal growing
KR830007435A (en) Manufacturing method of single crystal
GB1476915A (en) Drawing crystals from a melt
JPS5346418A (en) Low melting point alloy
ES336492A1 (en) Float glass tank with replaceable bottom wall means
JPS52149090A (en) Liquid crystal display device
GB1303309A (en)
GB1287789A (en) Crystal pulling device
JPS527015A (en) Fluid replenishing method
JPS5388677A (en) Display element
JPS5364693A (en) Production of zinc sulfide powder
JPS5277899A (en) Production of lithium ferrosilicate single crystal
JPS52106673A (en) Crystal growing method and device thereof
JPS52106381A (en) Automatic control apparatus for diameter of crystal
GB1095143A (en) Improvements in or relating to the production of single crystal material
JPS5747576A (en) Crucible supporting device
JPS5329979A (en) Transporting method of liquid culture keeping horizontal level always by gravity
JPS51126891A (en) Ion selective electrode with semiconductor crystal as the sensitive el ement
JPS52104946A (en) Display element
JPS549173A (en) Method of producing single crystal
JPS53144887A (en) Production of ribbon-shaped silicon crystal

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee