DE2259829C3 - Verfahren zur anodischen Bildung einer Oxidschicht auf mindestens 5% Gallium enthaltenden Verbindungshalbleitern, insbesondere GaP1GaAs, AlGaP, InGaP und InGaAs in einem wässrigen Elektrolyten - Google Patents

Verfahren zur anodischen Bildung einer Oxidschicht auf mindestens 5% Gallium enthaltenden Verbindungshalbleitern, insbesondere GaP1GaAs, AlGaP, InGaP und InGaAs in einem wässrigen Elektrolyten

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Publication number
DE2259829C3
DE2259829C3 DE2259829A DE2259829A DE2259829C3 DE 2259829 C3 DE2259829 C3 DE 2259829C3 DE 2259829 A DE2259829 A DE 2259829A DE 2259829 A DE2259829 A DE 2259829A DE 2259829 C3 DE2259829 C3 DE 2259829C3
Authority
DE
Germany
Prior art keywords
oxide
gallium
solution
oxide layer
algap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2259829A
Other languages
German (de)
English (en)
Other versions
DE2259829B2 (de
DE2259829A1 (de
Inventor
Bertram Westfield N.J. Schwartz (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2259829A1 publication Critical patent/DE2259829A1/de
Publication of DE2259829B2 publication Critical patent/DE2259829B2/de
Application granted granted Critical
Publication of DE2259829C3 publication Critical patent/DE2259829C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Electrochemical Coating By Surface Reaction (AREA)
DE2259829A 1971-12-13 1972-12-07 Verfahren zur anodischen Bildung einer Oxidschicht auf mindestens 5% Gallium enthaltenden Verbindungshalbleitern, insbesondere GaP1GaAs, AlGaP, InGaP und InGaAs in einem wässrigen Elektrolyten Expired DE2259829C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20705271A 1971-12-13 1971-12-13
US29212772A 1972-09-25 1972-09-25

Publications (3)

Publication Number Publication Date
DE2259829A1 DE2259829A1 (de) 1973-07-26
DE2259829B2 DE2259829B2 (de) 1975-09-04
DE2259829C3 true DE2259829C3 (de) 1980-06-12

Family

ID=26901912

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2259829A Expired DE2259829C3 (de) 1971-12-13 1972-12-07 Verfahren zur anodischen Bildung einer Oxidschicht auf mindestens 5% Gallium enthaltenden Verbindungshalbleitern, insbesondere GaP1GaAs, AlGaP, InGaP und InGaAs in einem wässrigen Elektrolyten

Country Status (10)

Country Link
US (1) US3798139A (enExample)
JP (1) JPS4866540A (enExample)
BE (1) BE792614A (enExample)
CA (1) CA1002898A (enExample)
DE (1) DE2259829C3 (enExample)
FR (1) FR2163534B1 (enExample)
GB (1) GB1405636A (enExample)
HK (1) HK36176A (enExample)
IT (1) IT973893B (enExample)
NL (1) NL160984C (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890169A (en) * 1973-03-26 1975-06-17 Bell Telephone Labor Inc Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3844904A (en) * 1973-03-19 1974-10-29 Bell Telephone Labor Inc Anodic oxidation of gallium phosphide
DE2455048A1 (de) * 1973-11-23 1975-11-13 Anvar Verfahren zur herstellung von oberflaechenueberzuegen, sowie mittels desselben erhaltene ueberzuege und ueberzogene werkstuecke
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
US3929589A (en) * 1974-02-08 1975-12-30 Bell Telephone Labor Inc Selective area oxidation of III-V compound semiconductors
US3894919A (en) * 1974-05-09 1975-07-15 Bell Telephone Labor Inc Contacting semiconductors during electrolytic oxidation
US3882000A (en) * 1974-05-09 1975-05-06 Bell Telephone Labor Inc Formation of composite oxides on III-V semiconductors
JPS51113571A (en) * 1975-03-31 1976-10-06 Oki Electric Ind Co Ltd Precision processing method of semi-conductor
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
NL7602014A (nl) * 1976-02-27 1977-08-30 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd volgens de werkwijze.
US4026741A (en) * 1976-06-16 1977-05-31 Bell Telephone Laboratories, Incorporated Technique for preparation of stoichiometric III-V compound semiconductor surfaces
JPS53105177A (en) * 1977-02-24 1978-09-13 Toshiba Corp Manufacture of semiconductor device
GB1556778A (en) * 1977-03-11 1979-11-28 Post Office Preparation of semiconductor surfaces
DE2830035C2 (de) * 1977-07-15 1984-05-17 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Verfahren, bei arsenhaltigen Oxidfilmen auf einer Halbleitervorrichtung die Verarmung an Arsen zu verhindern
US4269635A (en) * 1977-12-28 1981-05-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
US4891103A (en) * 1988-08-23 1990-01-02 Texas Instruments Incorporated Anadization system with remote voltage sensing and active feedback control capabilities
JPH088256B2 (ja) * 1990-06-06 1996-01-29 松下電器産業株式会社 化合物半導体のパッシベーション膜の製造方法
US6332967B1 (en) 1999-11-23 2001-12-25 Midwest Research Institute Electro-deposition of superconductor oxide films

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826473A (enExample) * 1971-08-11 1973-04-07

Also Published As

Publication number Publication date
FR2163534B1 (enExample) 1977-04-08
BE792614A (fr) 1973-03-30
NL7216718A (enExample) 1973-06-15
NL160984C (nl) 1979-12-17
JPS4866540A (enExample) 1973-09-12
HK36176A (en) 1976-06-18
DE2259829B2 (de) 1975-09-04
CA1002898A (en) 1977-01-04
NL160984B (nl) 1979-07-16
FR2163534A1 (enExample) 1973-07-27
US3798139A (en) 1974-03-19
DE2259829A1 (de) 1973-07-26
GB1405636A (en) 1975-09-10
IT973893B (it) 1974-06-10

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee