HK36176A - Improvements in or relating to a method of treating a gallium-containing compound semiconductor - Google Patents

Improvements in or relating to a method of treating a gallium-containing compound semiconductor

Info

Publication number
HK36176A
HK36176A HK361/76*UA HK36176A HK36176A HK 36176 A HK36176 A HK 36176A HK 36176 A HK36176 A HK 36176A HK 36176 A HK36176 A HK 36176A
Authority
HK
Hong Kong
Prior art keywords
gallium
relating
treating
containing compound
compound semiconductor
Prior art date
Application number
HK361/76*UA
Other languages
English (en)
Inventor
B Schwartz
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of HK36176A publication Critical patent/HK36176A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
    • H01L21/31675—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
    • H01L21/31679—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of AIII BV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Electrochemical Coating By Surface Reaction (AREA)
HK361/76*UA 1971-12-13 1976-06-10 Improvements in or relating to a method of treating a gallium-containing compound semiconductor HK36176A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20705271A 1971-12-13 1971-12-13
US29212772A 1972-09-25 1972-09-25

Publications (1)

Publication Number Publication Date
HK36176A true HK36176A (en) 1976-06-18

Family

ID=26901912

Family Applications (1)

Application Number Title Priority Date Filing Date
HK361/76*UA HK36176A (en) 1971-12-13 1976-06-10 Improvements in or relating to a method of treating a gallium-containing compound semiconductor

Country Status (10)

Country Link
US (1) US3798139A (xx)
JP (1) JPS4866540A (xx)
BE (1) BE792614A (xx)
CA (1) CA1002898A (xx)
DE (1) DE2259829C3 (xx)
FR (1) FR2163534B1 (xx)
GB (1) GB1405636A (xx)
HK (1) HK36176A (xx)
IT (1) IT973893B (xx)
NL (1) NL160984C (xx)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890169A (en) * 1973-03-26 1975-06-17 Bell Telephone Labor Inc Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3844904A (en) * 1973-03-19 1974-10-29 Bell Telephone Labor Inc Anodic oxidation of gallium phosphide
DE2455048A1 (de) * 1973-11-23 1975-11-13 Anvar Verfahren zur herstellung von oberflaechenueberzuegen, sowie mittels desselben erhaltene ueberzuege und ueberzogene werkstuecke
US3929589A (en) * 1974-02-08 1975-12-30 Bell Telephone Labor Inc Selective area oxidation of III-V compound semiconductors
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
US3894919A (en) * 1974-05-09 1975-07-15 Bell Telephone Labor Inc Contacting semiconductors during electrolytic oxidation
US3882000A (en) * 1974-05-09 1975-05-06 Bell Telephone Labor Inc Formation of composite oxides on III-V semiconductors
JPS51113571A (en) * 1975-03-31 1976-10-06 Oki Electric Ind Co Ltd Precision processing method of semi-conductor
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
NL7602014A (nl) * 1976-02-27 1977-08-30 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd volgens de werkwijze.
US4026741A (en) * 1976-06-16 1977-05-31 Bell Telephone Laboratories, Incorporated Technique for preparation of stoichiometric III-V compound semiconductor surfaces
JPS53105177A (en) * 1977-02-24 1978-09-13 Toshiba Corp Manufacture of semiconductor device
GB1556778A (en) * 1977-03-11 1979-11-28 Post Office Preparation of semiconductor surfaces
DE2830035C2 (de) * 1977-07-15 1984-05-17 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Verfahren, bei arsenhaltigen Oxidfilmen auf einer Halbleitervorrichtung die Verarmung an Arsen zu verhindern
US4269635A (en) * 1977-12-28 1981-05-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
US4891103A (en) * 1988-08-23 1990-01-02 Texas Instruments Incorporated Anadization system with remote voltage sensing and active feedback control capabilities
JPH088256B2 (ja) * 1990-06-06 1996-01-29 松下電器産業株式会社 化合物半導体のパッシベーション膜の製造方法
US6332967B1 (en) 1999-11-23 2001-12-25 Midwest Research Institute Electro-deposition of superconductor oxide films

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826473A (xx) * 1971-08-11 1973-04-07

Also Published As

Publication number Publication date
US3798139A (en) 1974-03-19
JPS4866540A (xx) 1973-09-12
CA1002898A (en) 1977-01-04
DE2259829A1 (de) 1973-07-26
NL7216718A (xx) 1973-06-15
IT973893B (it) 1974-06-10
DE2259829B2 (de) 1975-09-04
FR2163534A1 (xx) 1973-07-27
BE792614A (fr) 1973-03-30
NL160984C (nl) 1979-12-17
NL160984B (nl) 1979-07-16
GB1405636A (en) 1975-09-10
FR2163534B1 (xx) 1977-04-08
DE2259829C3 (de) 1980-06-12

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