Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
  • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
  • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
  • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Bipolar Transistors (AREA)
• Semiconductor Integrated Circuits (AREA)
• Bipolar Integrated Circuits (AREA)
• Solid State Image Pick-Up Elements (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=22721111

Family Applications (1)

Country Status (7)

Families Citing this family (10)

• 1971
  • 1971-11-03 US US00195355A patent/US3796928A/en not_active Expired - Lifetime
• 1972
  • 1972-09-27 IT IT29717/72A patent/IT967899B/it active
  • 1972-10-17 GB GB4777472A patent/GB1336301A/en not_active Expired
  • 1972-10-18 FR FR7237920A patent/FR2158281B1/fr not_active Expired
  • 1972-10-25 JP JP47106346A patent/JPS5218075B2/ja not_active Expired
  • 1972-11-01 CA CA155,564A patent/CA963169A/en not_active Expired
  • 1972-11-02 DE DE2253614A patent/DE2253614A1/de not_active Withdrawn

Also Published As

Similar Documents

Legal Events