DE2243524A1 - Verfahren zur herstellung einer galliumphosphid-lichtemissions-diode - Google Patents

Verfahren zur herstellung einer galliumphosphid-lichtemissions-diode

Info

Publication number
DE2243524A1
DE2243524A1 DE2243524A DE2243524A DE2243524A1 DE 2243524 A1 DE2243524 A1 DE 2243524A1 DE 2243524 A DE2243524 A DE 2243524A DE 2243524 A DE2243524 A DE 2243524A DE 2243524 A1 DE2243524 A1 DE 2243524A1
Authority
DE
Germany
Prior art keywords
layer
zone
nitrogen
furnace
gallium phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2243524A
Other languages
German (de)
English (en)
Inventor
Peter Brian Hart
Ralph Nicklin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Overseas Ltd
Original Assignee
PLESSEY HANDEL und INVESTMENTS AG ZUG (SCHWEIZ)
Plessey Handel und Investments AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PLESSEY HANDEL und INVESTMENTS AG ZUG (SCHWEIZ), Plessey Handel und Investments AG filed Critical PLESSEY HANDEL und INVESTMENTS AG ZUG (SCHWEIZ)
Publication of DE2243524A1 publication Critical patent/DE2243524A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2243524A 1971-09-10 1972-09-05 Verfahren zur herstellung einer galliumphosphid-lichtemissions-diode Ceased DE2243524A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4229171 1971-09-10

Publications (1)

Publication Number Publication Date
DE2243524A1 true DE2243524A1 (de) 1973-03-15

Family

ID=10423781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2243524A Ceased DE2243524A1 (de) 1971-09-10 1972-09-05 Verfahren zur herstellung einer galliumphosphid-lichtemissions-diode

Country Status (6)

Country Link
JP (1) JPS5745068B2 (cg-RX-API-DMAC7.html)
CA (1) CA974633A (cg-RX-API-DMAC7.html)
DE (1) DE2243524A1 (cg-RX-API-DMAC7.html)
FR (1) FR2152751B1 (cg-RX-API-DMAC7.html)
GB (1) GB1353954A (cg-RX-API-DMAC7.html)
IT (1) IT967326B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116121867A (zh) * 2023-02-01 2023-05-16 有研国晶辉新材料有限公司 一种光学级磷化镓单晶的制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0666270B2 (ja) * 1985-09-16 1994-08-24 アメリカン テレフオン アンド テレグラフ カムパニ− リンを含む半導体デバイスの製造方法
JPH01245569A (ja) * 1988-03-28 1989-09-29 Toshiba Corp ＧａＰ緑色発光素子とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116121867A (zh) * 2023-02-01 2023-05-16 有研国晶辉新材料有限公司 一种光学级磷化镓单晶的制备方法
CN116121867B (zh) * 2023-02-01 2023-08-15 有研国晶辉新材料有限公司 一种光学级磷化镓单晶的制备方法

Also Published As

Publication number Publication date
FR2152751A1 (cg-RX-API-DMAC7.html) 1973-04-27
GB1353954A (en) 1974-05-22
CA974633A (en) 1975-09-16
JPS5745068B2 (cg-RX-API-DMAC7.html) 1982-09-25
FR2152751B1 (cg-RX-API-DMAC7.html) 1978-01-06
IT967326B (it) 1974-02-28
JPS4838692A (cg-RX-API-DMAC7.html) 1973-06-07

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Legal Events

Date Code Title Description
OD Request for examination
8127 New person/name/address of the applicant

Owner name: PLESSEY OVERSEAS LTD., ILFORD, ESSEX, GB

8128 New person/name/address of the agent

Representative=s name: BERENDT, T., DIPL.-CHEM. DR. LEYH, H., DIPL.-ING.

8131 Rejection