DE2241710C3 - Schiffchen zum Züchten von Halbleitereinkristallen nach dem horizontalen Bridgman-Verfahren - Google Patents

Schiffchen zum Züchten von Halbleitereinkristallen nach dem horizontalen Bridgman-Verfahren

Info

Publication number
DE2241710C3
DE2241710C3 DE2241710A DE2241710A DE2241710C3 DE 2241710 C3 DE2241710 C3 DE 2241710C3 DE 2241710 A DE2241710 A DE 2241710A DE 2241710 A DE2241710 A DE 2241710A DE 2241710 C3 DE2241710 C3 DE 2241710C3
Authority
DE
Germany
Prior art keywords
boat
section
single crystals
breeding
boats
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2241710A
Other languages
German (de)
English (en)
Other versions
DE2241710B2 (de
DE2241710A1 (de
Inventor
David William Beacon Boss
Edward Melvin Lagrangeville Hull
Salvatore James Marlboro Scilla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2241710A1 publication Critical patent/DE2241710A1/de
Publication of DE2241710B2 publication Critical patent/DE2241710B2/de
Application granted granted Critical
Publication of DE2241710C3 publication Critical patent/DE2241710C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2241710A 1971-09-13 1972-08-24 Schiffchen zum Züchten von Halbleitereinkristallen nach dem horizontalen Bridgman-Verfahren Expired DE2241710C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18004171A 1971-09-13 1971-09-13

Publications (3)

Publication Number Publication Date
DE2241710A1 DE2241710A1 (de) 1973-03-22
DE2241710B2 DE2241710B2 (de) 1980-03-06
DE2241710C3 true DE2241710C3 (de) 1980-10-23

Family

ID=22658988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2241710A Expired DE2241710C3 (de) 1971-09-13 1972-08-24 Schiffchen zum Züchten von Halbleitereinkristallen nach dem horizontalen Bridgman-Verfahren

Country Status (5)

Country Link
US (1) US3796548A (enExample)
JP (1) JPS5239389B2 (enExample)
DE (1) DE2241710C3 (enExample)
FR (1) FR2154458B1 (enExample)
GB (1) GB1343384A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3944393A (en) * 1973-11-21 1976-03-16 Monsanto Company Apparatus for horizontal production of single crystal structure
JPS5276926U (enExample) * 1975-12-08 1977-06-08
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
FR2383728A1 (fr) * 1977-03-16 1978-10-13 Radiotechnique Compelec Perfectionnement a un procede de realisation d'un lingot de materiau cristallin
JPS5722149U (enExample) * 1980-07-15 1982-02-04
JPS5722150U (enExample) * 1980-07-15 1982-02-04
JPS6050759B2 (ja) * 1982-07-14 1985-11-09 財団法人 半導体研究振興会 ＺｎＳｅのエピタキシヤル成長法及び成長装置
JPS6090890A (ja) * 1983-10-24 1985-05-22 Mitsubishi Monsanto Chem Co 無機化合物単結晶の成長方法及び単結晶成長用ボ−ト
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
FR2614322B1 (fr) * 1987-04-27 1989-07-28 Europ Propulsion Four a gradient destine a la solidification orientee, notamment par la methode de bridgmann.
US5248377A (en) * 1989-12-01 1993-09-28 Grumman Aerospace Corporation Crystal-growth furnace for interface curvature control
CN105297130A (zh) * 2014-06-03 2016-02-03 长春理工大学 下降法定向生长氟化物晶体的方法及装置
CN108546986B (zh) * 2018-04-19 2020-09-15 中国科学院半导体研究所 籽晶保护装置及单晶生长方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172734A (en) * 1957-03-07 1965-03-09 warren
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals
US3156533A (en) * 1960-07-26 1964-11-10 Imber Oscar Crystal growth apparatus
DE1303150B (enExample) * 1961-01-13 1971-05-13 Philips Nv
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals
US3240568A (en) * 1961-12-20 1966-03-15 Monsanto Co Process and apparatus for the production of single crystal compounds
US3401022A (en) * 1964-03-26 1968-09-10 Motorola Inc Apparatus for horizontal zone refining of semiconductive materials
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3464812A (en) * 1966-03-29 1969-09-02 Massachusetts Inst Technology Process for making solids and products thereof
US3520810A (en) * 1968-01-15 1970-07-21 Ibm Manufacture of single crystal semiconductors
US3617223A (en) * 1968-05-21 1971-11-02 Texas Instruments Inc Apparatus for forming monocrystalline ribbons of silicon
US3607054A (en) * 1969-05-05 1971-09-21 Us Army Method for extending the growth of vapor-liquid-solid grown crystals

Also Published As

Publication number Publication date
JPS4840374A (enExample) 1973-06-13
GB1343384A (en) 1974-01-10
US3796548A (en) 1974-03-12
DE2241710B2 (de) 1980-03-06
JPS5239389B2 (enExample) 1977-10-05
DE2241710A1 (de) 1973-03-22
FR2154458B1 (enExample) 1978-08-04
FR2154458A1 (enExample) 1973-05-11

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee