DE2241472A1 - Integrierte halbleiterschaltung - Google Patents

Integrierte halbleiterschaltung

Info

Publication number
DE2241472A1
DE2241472A1 DE2241472A DE2241472A DE2241472A1 DE 2241472 A1 DE2241472 A1 DE 2241472A1 DE 2241472 A DE2241472 A DE 2241472A DE 2241472 A DE2241472 A DE 2241472A DE 2241472 A1 DE2241472 A1 DE 2241472A1
Authority
DE
Germany
Prior art keywords
insulating layer
layer
circuit according
semiconductor circuit
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2241472A
Other languages
German (de)
English (en)
Inventor
Taketoshi Kato
Norio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2241472A1 publication Critical patent/DE2241472A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE2241472A 1971-08-23 1972-08-23 Integrierte halbleiterschaltung Pending DE2241472A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46063649A JPS4830880A (enrdf_load_stackoverflow) 1971-08-23 1971-08-23

Publications (1)

Publication Number Publication Date
DE2241472A1 true DE2241472A1 (de) 1973-03-08

Family

ID=13235393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2241472A Pending DE2241472A1 (de) 1971-08-23 1972-08-23 Integrierte halbleiterschaltung

Country Status (5)

Country Link
JP (1) JPS4830880A (enrdf_load_stackoverflow)
DE (1) DE2241472A1 (enrdf_load_stackoverflow)
FR (1) FR2150439B1 (enrdf_load_stackoverflow)
GB (1) GB1362919A (enrdf_load_stackoverflow)
IT (1) IT962195B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019886A1 (de) * 1979-05-30 1980-12-10 Siemens Aktiengesellschaft Halbleiterspeicher

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136882A (ja) * 1974-09-24 1976-03-27 Nippon Electric Co Denkaikokahandotaisochinoseizohoho

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831035A (enrdf_load_stackoverflow) * 1971-08-26 1973-04-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019886A1 (de) * 1979-05-30 1980-12-10 Siemens Aktiengesellschaft Halbleiterspeicher

Also Published As

Publication number Publication date
FR2150439A1 (enrdf_load_stackoverflow) 1973-04-06
JPS4830880A (enrdf_load_stackoverflow) 1973-04-23
FR2150439B1 (enrdf_load_stackoverflow) 1974-08-19
GB1362919A (en) 1974-08-07
IT962195B (it) 1973-12-20

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