GB1362919A - Semiconductor integrated circuit including an insulating gate type semiconductor transistor - Google Patents

Semiconductor integrated circuit including an insulating gate type semiconductor transistor

Info

Publication number
GB1362919A
GB1362919A GB3934872A GB3934872A GB1362919A GB 1362919 A GB1362919 A GB 1362919A GB 3934872 A GB3934872 A GB 3934872A GB 3934872 A GB3934872 A GB 3934872A GB 1362919 A GB1362919 A GB 1362919A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
circuit including
zones
gate type
insulating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3934872A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1362919A publication Critical patent/GB1362919A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
GB3934872A 1971-08-23 1972-08-23 Semiconductor integrated circuit including an insulating gate type semiconductor transistor Expired GB1362919A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46063649A JPS4830880A (enrdf_load_stackoverflow) 1971-08-23 1971-08-23

Publications (1)

Publication Number Publication Date
GB1362919A true GB1362919A (en) 1974-08-07

Family

ID=13235393

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3934872A Expired GB1362919A (en) 1971-08-23 1972-08-23 Semiconductor integrated circuit including an insulating gate type semiconductor transistor

Country Status (5)

Country Link
JP (1) JPS4830880A (enrdf_load_stackoverflow)
DE (1) DE2241472A1 (enrdf_load_stackoverflow)
FR (1) FR2150439B1 (enrdf_load_stackoverflow)
GB (1) GB1362919A (enrdf_load_stackoverflow)
IT (1) IT962195B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136882A (ja) * 1974-09-24 1976-03-27 Nippon Electric Co Denkaikokahandotaisochinoseizohoho
DE2921993A1 (de) * 1979-05-30 1980-12-04 Siemens Ag Halbleiterspeicher

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831035A (enrdf_load_stackoverflow) * 1971-08-26 1973-04-24

Also Published As

Publication number Publication date
IT962195B (it) 1973-12-20
JPS4830880A (enrdf_load_stackoverflow) 1973-04-23
DE2241472A1 (de) 1973-03-08
FR2150439A1 (enrdf_load_stackoverflow) 1973-04-06
FR2150439B1 (enrdf_load_stackoverflow) 1974-08-19

Similar Documents

Publication Publication Date Title
US3958266A (en) Deep depletion insulated gate field effect transistors
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1408180A (en) Semiconductor device manufacture
GB1153428A (en) Improvements in Semiconductor Devices.
GB1396896A (en) Semiconductor devices including field effect and bipolar transistors
GB1242896A (en) Semiconductor device and method of fabrication
GB1354425A (en) Semiconductor device
GB1332384A (en) Fabrication of semiconductor devices
GB1489390A (en) Method for fabricating mos devices with a plurality of thresholds on a single semi-conductor substrate
GB1525415A (en) Mos transistor
GB1456750A (en) Field effect transistors
GB1316442A (en) Semiconductor devices
US4350991A (en) Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
GB1362919A (en) Semiconductor integrated circuit including an insulating gate type semiconductor transistor
GB1495460A (en) Semiconductor device manufacture
CA1228935A (en) Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
GB1275213A (en) Improvements in or relating to the manufacture of semiconductor components
GB1460489A (en) Field-effect transistors
JPS6454762A (en) Insulated gate field effect transistor
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS5265683A (en) Production of insulated gate type mis semiconductor device
GB1432309A (en) Semiconductor structures
GB1318444A (en) Field effect semiconductor devices
JPS5518072A (en) Mos semiconductor device
JPS56101758A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PE20 Patent expired after termination of 20 years