DE2240790A1 - Informationsspeicher-halbleiteranordnung - Google Patents
Informationsspeicher-halbleiteranordnungInfo
- Publication number
- DE2240790A1 DE2240790A1 DE2240790A DE2240790A DE2240790A1 DE 2240790 A1 DE2240790 A1 DE 2240790A1 DE 2240790 A DE2240790 A DE 2240790A DE 2240790 A DE2240790 A DE 2240790A DE 2240790 A1 DE2240790 A1 DE 2240790A1
- Authority
- DE
- Germany
- Prior art keywords
- surface areas
- semiconductor
- pair
- crystal orientation
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 239000013078 crystal Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000969 carrier Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 238000005381 potential energy Methods 0.000 claims 5
- 239000002800 charge carrier Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000000377 silicon dioxide Substances 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 16
- 239000003990 capacitor Substances 0.000 description 10
- 230000005669 field effect Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- -1 on surfaces (111) Chemical compound 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/474—Two-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46063165A JPS5132457B2 (enrdf_load_stackoverflow) | 1971-08-19 | 1971-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2240790A1 true DE2240790A1 (de) | 1973-03-01 |
Family
ID=13221343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2240790A Pending DE2240790A1 (de) | 1971-08-19 | 1972-08-18 | Informationsspeicher-halbleiteranordnung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5132457B2 (enrdf_load_stackoverflow) |
| CA (1) | CA973972A (enrdf_load_stackoverflow) |
| DE (1) | DE2240790A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1364951A (enrdf_load_stackoverflow) |
| NL (1) | NL7211422A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0019722A1 (de) * | 1979-05-24 | 1980-12-10 | International Business Machines Corporation | Integrierte Ladungsverschiebe-Mikroschaltung |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119038A (en) * | 1974-08-08 | 1976-02-16 | Toyota Motor Co Ltd | Denchakutosodeno kawakimuraboshihoho |
| JPS5332684A (en) * | 1976-09-07 | 1978-03-28 | Toshiba Corp | Semiconductor memory device |
-
1971
- 1971-08-19 JP JP46063165A patent/JPS5132457B2/ja not_active Expired
-
1972
- 1972-08-15 CA CA149,470A patent/CA973972A/en not_active Expired
- 1972-08-17 GB GB3843472A patent/GB1364951A/en not_active Expired
- 1972-08-18 DE DE2240790A patent/DE2240790A1/de active Pending
- 1972-08-21 NL NL7211422A patent/NL7211422A/xx not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0019722A1 (de) * | 1979-05-24 | 1980-12-10 | International Business Machines Corporation | Integrierte Ladungsverschiebe-Mikroschaltung |
Also Published As
| Publication number | Publication date |
|---|---|
| CA973972A (en) | 1975-09-02 |
| GB1364951A (en) | 1974-08-29 |
| JPS5132457B2 (enrdf_load_stackoverflow) | 1976-09-13 |
| NL7211422A (enrdf_load_stackoverflow) | 1973-02-21 |
| JPS4829378A (enrdf_load_stackoverflow) | 1973-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| OHJ | Non-payment of the annual fee |