GB1364951A - Twophase charge coupled device - Google Patents
Twophase charge coupled deviceInfo
- Publication number
- GB1364951A GB1364951A GB3843472A GB3843472A GB1364951A GB 1364951 A GB1364951 A GB 1364951A GB 3843472 A GB3843472 A GB 3843472A GB 3843472 A GB3843472 A GB 3843472A GB 1364951 A GB1364951 A GB 1364951A
- Authority
- GB
- United Kingdom
- Prior art keywords
- areas
- charge
- aug
- coupled device
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/474—Two-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46063165A JPS5132457B2 (enrdf_load_stackoverflow) | 1971-08-19 | 1971-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1364951A true GB1364951A (en) | 1974-08-29 |
Family
ID=13221343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3843472A Expired GB1364951A (en) | 1971-08-19 | 1972-08-17 | Twophase charge coupled device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5132457B2 (enrdf_load_stackoverflow) |
| CA (1) | CA973972A (enrdf_load_stackoverflow) |
| DE (1) | DE2240790A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1364951A (enrdf_load_stackoverflow) |
| NL (1) | NL7211422A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119038A (en) * | 1974-08-08 | 1976-02-16 | Toyota Motor Co Ltd | Denchakutosodeno kawakimuraboshihoho |
| JPS5332684A (en) * | 1976-09-07 | 1978-03-28 | Toshiba Corp | Semiconductor memory device |
| US4234887A (en) * | 1979-05-24 | 1980-11-18 | International Business Machines Corporation | V-Groove charge-coupled device |
-
1971
- 1971-08-19 JP JP46063165A patent/JPS5132457B2/ja not_active Expired
-
1972
- 1972-08-15 CA CA149,470A patent/CA973972A/en not_active Expired
- 1972-08-17 GB GB3843472A patent/GB1364951A/en not_active Expired
- 1972-08-18 DE DE2240790A patent/DE2240790A1/de active Pending
- 1972-08-21 NL NL7211422A patent/NL7211422A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CA973972A (en) | 1975-09-02 |
| DE2240790A1 (de) | 1973-03-01 |
| JPS5132457B2 (enrdf_load_stackoverflow) | 1976-09-13 |
| NL7211422A (enrdf_load_stackoverflow) | 1973-02-21 |
| JPS4829378A (enrdf_load_stackoverflow) | 1973-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |