JPS55133570A - Charge coupled device - Google Patents

Charge coupled device

Info

Publication number
JPS55133570A
JPS55133570A JP2073680A JP2073680A JPS55133570A JP S55133570 A JPS55133570 A JP S55133570A JP 2073680 A JP2073680 A JP 2073680A JP 2073680 A JP2073680 A JP 2073680A JP S55133570 A JPS55133570 A JP S55133570A
Authority
JP
Japan
Prior art keywords
electrode groups
coupled device
charge coupled
polycrystalline silicon
oxide films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2073680A
Other languages
Japanese (ja)
Other versions
JPS57666B2 (en
Inventor
Toru Kondo
Shiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2073680A priority Critical patent/JPS55133570A/en
Publication of JPS55133570A publication Critical patent/JPS55133570A/en
Publication of JPS57666B2 publication Critical patent/JPS57666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the transfer efficiency and speed of a charge coupled device by applying a drift field for accelerating charge carrier in transfer direction thereto during transfer cycle. CONSTITUTION:There are formed the first polycrystalline silicon electrode groups 13a, 13b,... disposed at predetermined interval, the second polycrystalline silicon electrode groups 21a, 21b,... electrically insulated via oxide films 14a, 14b,... for coating the upper surface, front and rear edges of the electrode groups 13a, 13b,..., and oxide films 22a, 22b selectively diffused on the second electrode groups to form low resistance diffused regions 23a', 23b, 23b', 23c,... for electric connections. The electric connectors formed at the front and rear edges of the electrodes 13a, 13b,... 21a, 21b,... in transfer direction are wired to common terminals 27, 28 and 29, 30, respectively.
JP2073680A 1980-02-20 1980-02-20 Charge coupled device Granted JPS55133570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2073680A JPS55133570A (en) 1980-02-20 1980-02-20 Charge coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2073680A JPS55133570A (en) 1980-02-20 1980-02-20 Charge coupled device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3811374A Division JPS5719874B2 (en) 1974-04-03 1974-04-03

Publications (2)

Publication Number Publication Date
JPS55133570A true JPS55133570A (en) 1980-10-17
JPS57666B2 JPS57666B2 (en) 1982-01-07

Family

ID=12035473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2073680A Granted JPS55133570A (en) 1980-02-20 1980-02-20 Charge coupled device

Country Status (1)

Country Link
JP (1) JPS55133570A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817599A (en) * 1981-07-24 1983-02-01 Matsushita Electric Ind Co Ltd Charge transfer device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027814A (en) * 1983-07-25 1985-02-12 Matsushita Electric Ind Co Ltd Score evaluating and announcing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4910680A (en) * 1972-05-24 1974-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4910680A (en) * 1972-05-24 1974-01-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817599A (en) * 1981-07-24 1983-02-01 Matsushita Electric Ind Co Ltd Charge transfer device

Also Published As

Publication number Publication date
JPS57666B2 (en) 1982-01-07

Similar Documents

Publication Publication Date Title
EP0148330A3 (en) Integrable hall element
GB1379141A (en) Charge coupled devices
JPS55133570A (en) Charge coupled device
JPS5776878A (en) Semiconductor memory device
JPS5735361A (en) Film carrier lead
JPS577976A (en) Photo electromotive force element
JPS5533068A (en) Charge transfer device
JPS56126971A (en) Thin film field effect element
JPS5275189A (en) Charge transfer device
JPS5658280A (en) Solar cell
JPS5274286A (en) Charge transfer device
JPS5282080A (en) Charge transfer device
JPS51138348A (en) Semiconductor device
JPS533077A (en) Charge transfer device
JPS57138177A (en) Charge transfer device
JPS57181276A (en) Solid-state image pickup device
JPS57208175A (en) Semiconductor device
JPS5370773A (en) Semiconductor device
JPS5260575A (en) Charge transfer device
JPS5691471A (en) Charge combining device
JPS57128959A (en) Solid state image pickup element
JPS5360584A (en) Production of semiconductor device
JPS5752162A (en) Semiconductor device
JPS5370771A (en) Semiconductor device
JPS5775413A (en) Manufacture of magnetic thin film