JPS5533068A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5533068A
JPS5533068A JP10594078A JP10594078A JPS5533068A JP S5533068 A JPS5533068 A JP S5533068A JP 10594078 A JP10594078 A JP 10594078A JP 10594078 A JP10594078 A JP 10594078A JP S5533068 A JPS5533068 A JP S5533068A
Authority
JP
Japan
Prior art keywords
electrode
charge
transfer
assuming
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10594078A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10594078A priority Critical patent/JPS5533068A/en
Publication of JPS5533068A publication Critical patent/JPS5533068A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To facilitate a ready fabrication of a charge transfer device by providing two types of gate electrodes, one being slender band-like and the other being electrically independent from the one with two electrodes per one transfer stage to thereby provide ready inversion of transfer and bending of channel and to omit the charge guide region. CONSTITUTION:A gate electrodes consists of a band-like electrode 100, buses 10a, 10b, and small area electrode groups 101a, 101b...connected to the buses 10a, 10b. Assuming that the gate electrode 100 is at zero potential and the electrode 101a is positive potential, the charge of the cell Z1 of P-type substrate S is moved to the small electrode 101a. Then, assuming that the terminal 11a is zero, and the terminal 11b is positive potential, the charge is moved to the small electrode 101b, and is not returned to the small electrode g via the charge bank 2a. Then, assuming that the electrode 100 is prositive, the terminals 11a, 11b are zero potential, the charge is transferred to the cell Z4. Thus, the charge is transferred in zigzag form by three- phase drive to be unnecessary to unequalize the depth of the potential well in the respective cells Z1, Z4...under the band-like electrode 100. When the transfer relation of the transfer voltage is further altered, the transfer direction is inverted to facilitate a ready fabrication of the charge transfer device.
JP10594078A 1978-08-29 1978-08-29 Charge transfer device Pending JPS5533068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10594078A JPS5533068A (en) 1978-08-29 1978-08-29 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10594078A JPS5533068A (en) 1978-08-29 1978-08-29 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS5533068A true JPS5533068A (en) 1980-03-08

Family

ID=14420835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10594078A Pending JPS5533068A (en) 1978-08-29 1978-08-29 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5533068A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01266763A (en) * 1988-04-18 1989-10-24 Nec Corp Charge transfer device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01266763A (en) * 1988-04-18 1989-10-24 Nec Corp Charge transfer device

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