JPS5132457B2 - - Google Patents

Info

Publication number
JPS5132457B2
JPS5132457B2 JP46063165A JP6316571A JPS5132457B2 JP S5132457 B2 JPS5132457 B2 JP S5132457B2 JP 46063165 A JP46063165 A JP 46063165A JP 6316571 A JP6316571 A JP 6316571A JP S5132457 B2 JPS5132457 B2 JP S5132457B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP46063165A
Other languages
Japanese (ja)
Other versions
JPS4829378A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46063165A priority Critical patent/JPS5132457B2/ja
Priority to CA149,470A priority patent/CA973972A/en
Priority to GB3843472A priority patent/GB1364951A/en
Priority to DE2240790A priority patent/DE2240790A1/de
Priority to NL7211422A priority patent/NL7211422A/xx
Publication of JPS4829378A publication Critical patent/JPS4829378A/ja
Publication of JPS5132457B2 publication Critical patent/JPS5132457B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • H10D44/474Two-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351Substrate regions of field-effect devices
    • H10D62/386Substrate regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Junction Field-Effect Transistors (AREA)
JP46063165A 1971-08-19 1971-08-19 Expired JPS5132457B2 (enrdf_load_stackoverflow)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP46063165A JPS5132457B2 (enrdf_load_stackoverflow) 1971-08-19 1971-08-19
CA149,470A CA973972A (en) 1971-08-19 1972-08-15 Charge coupled devices using different crystal orientation
GB3843472A GB1364951A (en) 1971-08-19 1972-08-17 Twophase charge coupled device
DE2240790A DE2240790A1 (de) 1971-08-19 1972-08-18 Informationsspeicher-halbleiteranordnung
NL7211422A NL7211422A (enrdf_load_stackoverflow) 1971-08-19 1972-08-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46063165A JPS5132457B2 (enrdf_load_stackoverflow) 1971-08-19 1971-08-19

Publications (2)

Publication Number Publication Date
JPS4829378A JPS4829378A (enrdf_load_stackoverflow) 1973-04-18
JPS5132457B2 true JPS5132457B2 (enrdf_load_stackoverflow) 1976-09-13

Family

ID=13221343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46063165A Expired JPS5132457B2 (enrdf_load_stackoverflow) 1971-08-19 1971-08-19

Country Status (5)

Country Link
JP (1) JPS5132457B2 (enrdf_load_stackoverflow)
CA (1) CA973972A (enrdf_load_stackoverflow)
DE (1) DE2240790A1 (enrdf_load_stackoverflow)
GB (1) GB1364951A (enrdf_load_stackoverflow)
NL (1) NL7211422A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119038A (en) * 1974-08-08 1976-02-16 Toyota Motor Co Ltd Denchakutosodeno kawakimuraboshihoho
JPS5332684A (en) * 1976-09-07 1978-03-28 Toshiba Corp Semiconductor memory device
US4234887A (en) * 1979-05-24 1980-11-18 International Business Machines Corporation V-Groove charge-coupled device

Also Published As

Publication number Publication date
GB1364951A (en) 1974-08-29
CA973972A (en) 1975-09-02
DE2240790A1 (de) 1973-03-01
JPS4829378A (enrdf_load_stackoverflow) 1973-04-18
NL7211422A (enrdf_load_stackoverflow) 1973-02-21

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