DE2235801C3 - Monolithischer Festwertspeicher und Verfahren zur Herstellung - Google Patents

Monolithischer Festwertspeicher und Verfahren zur Herstellung

Info

Publication number
DE2235801C3
DE2235801C3 DE2235801A DE2235801A DE2235801C3 DE 2235801 C3 DE2235801 C3 DE 2235801C3 DE 2235801 A DE2235801 A DE 2235801A DE 2235801 A DE2235801 A DE 2235801A DE 2235801 C3 DE2235801 C3 DE 2235801C3
Authority
DE
Germany
Prior art keywords
semiconductor
metal layer
memory
zones
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2235801A
Other languages
German (de)
English (en)
Other versions
DE2235801A1 (de
DE2235801B2 (de
Inventor
Shakir Ahmed Wappingers Falls Abbas
Paul George Poughkeepsie Stern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2235801A1 publication Critical patent/DE2235801A1/de
Publication of DE2235801B2 publication Critical patent/DE2235801B2/de
Application granted granted Critical
Publication of DE2235801C3 publication Critical patent/DE2235801C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • H10W20/49—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE2235801A 1971-09-17 1972-07-21 Monolithischer Festwertspeicher und Verfahren zur Herstellung Expired DE2235801C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18150371A 1971-09-17 1971-09-17

Publications (3)

Publication Number Publication Date
DE2235801A1 DE2235801A1 (de) 1973-03-22
DE2235801B2 DE2235801B2 (de) 1979-07-26
DE2235801C3 true DE2235801C3 (de) 1980-04-10

Family

ID=22664541

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2235801A Expired DE2235801C3 (de) 1971-09-17 1972-07-21 Monolithischer Festwertspeicher und Verfahren zur Herstellung

Country Status (7)

Country Link
US (1) US3717852A (enExample)
JP (1) JPS5326462B2 (enExample)
CA (1) CA961582A (enExample)
DE (1) DE2235801C3 (enExample)
FR (1) FR2152621B1 (enExample)
GB (1) GB1372771A (enExample)
IT (1) IT963411B (enExample)

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US3863231A (en) * 1973-07-23 1975-01-28 Nat Res Dev Read only memory with annular fuse links
DE2545047C3 (de) * 1975-10-08 1978-09-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung eines Halbleiterfestwertspeichers
US4195354A (en) * 1977-08-16 1980-03-25 Dubinin Viktor P Semiconductor matrix for integrated read-only storage
US4502208A (en) * 1979-01-02 1985-03-05 Texas Instruments Incorporated Method of making high density VMOS electrically-programmable ROM
JPS5720463A (en) 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device
US4412308A (en) * 1981-06-15 1983-10-25 International Business Machines Corporation Programmable bipolar structures
US4441167A (en) * 1981-12-03 1984-04-03 Raytheon Company Reprogrammable read only memory
US4562639A (en) * 1982-03-23 1986-01-07 Texas Instruments Incorporated Process for making avalanche fuse element with isolated emitter
US4543594A (en) * 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
FR2550045A1 (fr) * 1983-07-29 1985-02-01 Inf Milit Spatiale Aeronaut Procede de coupure d'une piste interne de circuit imprime, dispositif de mise en oeuvre du procede
US4651409A (en) * 1984-02-09 1987-03-24 Ncr Corporation Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor
US4606781A (en) * 1984-10-18 1986-08-19 Motorola, Inc. Method for resistor trimming by metal migration
JPS6258673A (ja) * 1985-09-09 1987-03-14 Fujitsu Ltd 半導体記憶装置
US4906987A (en) * 1985-10-29 1990-03-06 Ohio Associated Enterprises, Inc. Printed circuit board system and method
US4943538A (en) * 1986-05-09 1990-07-24 Actel Corporation Programmable low impedance anti-fuse element
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
EP0509631A1 (en) * 1991-04-18 1992-10-21 Actel Corporation Antifuses having minimum areas
US5447880A (en) * 1992-12-22 1995-09-05 At&T Global Information Solutions Company Method for forming an amorphous silicon programmable element
US5550404A (en) * 1993-05-20 1996-08-27 Actel Corporation Electrically programmable antifuse having stair aperture
US5468680A (en) * 1994-03-18 1995-11-21 Massachusetts Institute Of Technology Method of making a three-terminal fuse
US5441907A (en) * 1994-06-27 1995-08-15 Taiwan Semiconductor Manufacturing Company Process for manufacturing a plug-diode mask ROM
US5789764A (en) * 1995-04-14 1998-08-04 Actel Corporation Antifuse with improved antifuse material
EP0774164A1 (en) * 1995-06-02 1997-05-21 Actel Corporation Raised tungsten plug antifuse and fabrication process
US5962903A (en) * 1995-06-08 1999-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Planarized plug-diode mask ROM structure
US5851882A (en) 1996-05-06 1998-12-22 Micron Technology, Inc. ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6351406B1 (en) 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6483736B2 (en) * 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6631085B2 (en) 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
CN100358147C (zh) 2000-08-14 2007-12-26 矩阵半导体公司 密集阵列和电荷存储器件及其制造方法
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
US6624011B1 (en) 2000-08-14 2003-09-23 Matrix Semiconductor, Inc. Thermal processing for three dimensional circuits
US6492706B1 (en) * 2000-12-13 2002-12-10 Cypress Semiconductor Corp. Programmable pin flag
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6627530B2 (en) 2000-12-22 2003-09-30 Matrix Semiconductor, Inc. Patterning three dimensional structures
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6584029B2 (en) * 2001-08-09 2003-06-24 Hewlett-Packard Development Company, L.P. One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US20060249753A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
US7812404B2 (en) 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
JP4480649B2 (ja) * 2005-09-05 2010-06-16 富士通マイクロエレクトロニクス株式会社 ヒューズ素子及びその切断方法
WO2008079114A1 (en) * 2006-12-20 2008-07-03 Solid State Cooling, Inc. Thermal diodic devices and methods for manufacturing same
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US20090104756A1 (en) * 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US9058887B2 (en) * 2007-10-30 2015-06-16 International Business Machines Corporation Reprogrammable electrical fuse
US20090272958A1 (en) * 2008-05-02 2009-11-05 Klaus-Dieter Ufert Resistive Memory
US20100283053A1 (en) * 2009-05-11 2010-11-11 Sandisk 3D Llc Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
KR102415409B1 (ko) * 2015-09-09 2022-07-04 에스케이하이닉스 주식회사 이피롬 셀 및 그 제조방법과, 이피롬 셀 어레이
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245051A (en) * 1960-11-16 1966-04-05 John H Robb Information storage matrices
SE346866B (enExample) * 1968-04-29 1972-07-17 G Tollet
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array

Also Published As

Publication number Publication date
JPS5326462B2 (enExample) 1978-08-02
DE2235801A1 (de) 1973-03-22
US3717852A (en) 1973-02-20
FR2152621A1 (enExample) 1973-04-27
FR2152621B1 (enExample) 1974-10-25
CA961582A (en) 1975-01-21
IT963411B (it) 1974-01-10
DE2235801B2 (de) 1979-07-26
GB1372771A (en) 1974-11-06
JPS4838947A (enExample) 1973-06-08

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee