DE2226613C3 - Schutzvorrichtung für einen Isolierschicht-Feldeffekttransistor - Google Patents

Schutzvorrichtung für einen Isolierschicht-Feldeffekttransistor

Info

Publication number
DE2226613C3
DE2226613C3 DE2226613A DE2226613A DE2226613C3 DE 2226613 C3 DE2226613 C3 DE 2226613C3 DE 2226613 A DE2226613 A DE 2226613A DE 2226613 A DE2226613 A DE 2226613A DE 2226613 C3 DE2226613 C3 DE 2226613C3
Authority
DE
Germany
Prior art keywords
junction
field effect
component
film
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2226613A
Other languages
German (de)
English (en)
Other versions
DE2226613A1 (de
DE2226613B2 (de
Inventor
Richard Alan Hightstown N.J. Sunshine (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2226613A1 publication Critical patent/DE2226613A1/de
Publication of DE2226613B2 publication Critical patent/DE2226613B2/de
Application granted granted Critical
Publication of DE2226613C3 publication Critical patent/DE2226613C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
DE2226613A 1971-09-03 1972-05-31 Schutzvorrichtung für einen Isolierschicht-Feldeffekttransistor Expired DE2226613C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17779071A 1971-09-03 1971-09-03

Publications (3)

Publication Number Publication Date
DE2226613A1 DE2226613A1 (de) 1973-03-15
DE2226613B2 DE2226613B2 (de) 1977-12-22
DE2226613C3 true DE2226613C3 (de) 1978-08-24

Family

ID=22650002

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2226613A Expired DE2226613C3 (de) 1971-09-03 1972-05-31 Schutzvorrichtung für einen Isolierschicht-Feldeffekttransistor

Country Status (11)

Country Link
US (1) US3728591A (cg-RX-API-DMAC10.html)
JP (1) JPS5138588B2 (cg-RX-API-DMAC10.html)
AU (1) AU459838B2 (cg-RX-API-DMAC10.html)
BE (1) BE788269A (cg-RX-API-DMAC10.html)
CA (1) CA966935A (cg-RX-API-DMAC10.html)
DE (1) DE2226613C3 (cg-RX-API-DMAC10.html)
FR (1) FR2150684B1 (cg-RX-API-DMAC10.html)
GB (1) GB1339250A (cg-RX-API-DMAC10.html)
IT (1) IT955274B (cg-RX-API-DMAC10.html)
NL (1) NL7207246A (cg-RX-API-DMAC10.html)
SE (1) SE376116B (cg-RX-API-DMAC10.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941515A (en) * 1971-07-12 1974-02-05 Rca Corporation Gate protective device for insulated gate field-effect transistors
US3865653A (en) * 1971-10-12 1975-02-11 Karl Goser Logic circuit having a switching transistor and a load transistor, in particular for a semiconductor storage element
DE2335333B1 (de) * 1973-07-11 1975-01-16 Siemens Ag Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
JPS5623709Y2 (cg-RX-API-DMAC10.html) * 1975-05-16 1981-06-03
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
US4312114A (en) * 1977-02-24 1982-01-26 The United States Of America As Represented By The Secretary Of The Navy Method of preparing a thin-film, single-crystal photovoltaic detector
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
DE3380582D1 (en) * 1982-06-30 1989-10-19 Toshiba Kk Dynamic semiconductor memory and manufacturing method thereof
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
EP0322860B1 (en) * 1987-12-28 1996-09-11 Fuji Electric Co., Ltd. Insulated gate semiconductor device
JPH0473970A (ja) * 1990-07-16 1992-03-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
JP3001173U (ja) * 1994-02-18 1994-08-23 有限会社野々川商事 染毛用ブラシ
JP2803565B2 (ja) * 1994-04-15 1998-09-24 株式会社デンソー 半導体装置の製造方法
JP2768265B2 (ja) * 1994-04-15 1998-06-25 株式会社デンソー 半導体装置
US6146913A (en) * 1998-08-31 2000-11-14 Lucent Technologies Inc. Method for making enhanced performance field effect devices
FR2789226B1 (fr) 1999-01-29 2002-06-14 Commissariat Energie Atomique Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi
JP2002208702A (ja) * 2001-01-10 2002-07-26 Mitsubishi Electric Corp パワー半導体装置
DE102006023429B4 (de) * 2006-05-18 2011-03-10 Infineon Technologies Ag ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis
DE102014105790B4 (de) * 2014-04-24 2019-08-29 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit elektrostatischer Entladungsschutzstruktur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US3636418A (en) * 1969-08-06 1972-01-18 Rca Corp Epitaxial semiconductor device having adherent bonding pads

Also Published As

Publication number Publication date
AU4279172A (en) 1973-11-29
GB1339250A (en) 1973-11-28
IT955274B (it) 1973-09-29
US3728591A (en) 1973-04-17
DE2226613A1 (de) 1973-03-15
FR2150684B1 (cg-RX-API-DMAC10.html) 1977-07-22
CA966935A (en) 1975-04-29
BE788269A (fr) 1972-12-18
AU459838B2 (en) 1975-04-10
SE376116B (cg-RX-API-DMAC10.html) 1975-05-05
DE2226613B2 (de) 1977-12-22
FR2150684A1 (cg-RX-API-DMAC10.html) 1973-04-13
JPS5138588B2 (cg-RX-API-DMAC10.html) 1976-10-22
JPS4837084A (cg-RX-API-DMAC10.html) 1973-05-31
NL7207246A (cg-RX-API-DMAC10.html) 1973-03-06

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EHJ Ceased/non-payment of the annual fee