BE788269A - Dispositif pour la protection de la grille isolee d'un transistor de champ - Google Patents

Dispositif pour la protection de la grille isolee d'un transistor de champ

Info

Publication number
BE788269A
BE788269A BE788269A BE788269A BE788269A BE 788269 A BE788269 A BE 788269A BE 788269 A BE788269 A BE 788269A BE 788269 A BE788269 A BE 788269A BE 788269 A BE788269 A BE 788269A
Authority
BE
Belgium
Prior art keywords
grille
insulated
protecting
field transistor
transistor
Prior art date
Application number
BE788269A
Other languages
English (en)
Inventor
R A Sunshine
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE788269A publication Critical patent/BE788269A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
BE788269A 1971-09-03 1972-08-31 Dispositif pour la protection de la grille isolee d'un transistor de champ BE788269A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17779071A 1971-09-03 1971-09-03

Publications (1)

Publication Number Publication Date
BE788269A true BE788269A (fr) 1972-12-18

Family

ID=22650002

Family Applications (1)

Application Number Title Priority Date Filing Date
BE788269A BE788269A (fr) 1971-09-03 1972-08-31 Dispositif pour la protection de la grille isolee d'un transistor de champ

Country Status (11)

Country Link
US (1) US3728591A (fr)
JP (1) JPS5138588B2 (fr)
AU (1) AU459838B2 (fr)
BE (1) BE788269A (fr)
CA (1) CA966935A (fr)
DE (1) DE2226613C3 (fr)
FR (1) FR2150684B1 (fr)
GB (1) GB1339250A (fr)
IT (1) IT955274B (fr)
NL (1) NL7207246A (fr)
SE (1) SE376116B (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941515A (en) * 1971-07-12 1974-02-05 Rca Corporation Gate protective device for insulated gate field-effect transistors
US3865653A (en) * 1971-10-12 1975-02-11 Karl Goser Logic circuit having a switching transistor and a load transistor, in particular for a semiconductor storage element
DE2335333B1 (de) * 1973-07-11 1975-01-16 Siemens Ag Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
JPS5623709Y2 (fr) * 1975-05-16 1981-06-03
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
US4312114A (en) * 1977-02-24 1982-01-26 The United States Of America As Represented By The Secretary Of The Navy Method of preparing a thin-film, single-crystal photovoltaic detector
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
EP0102696B1 (fr) * 1982-06-30 1989-09-13 Kabushiki Kaisha Toshiba Mémoire dynamique à semi-conducteur et son procédé de fabrication
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
EP0322860B1 (fr) * 1987-12-28 1996-09-11 Fuji Electric Co., Ltd. Dispositif semi-conducteur à grille isolée
JPH0473970A (ja) * 1990-07-16 1992-03-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
JP3001173U (ja) * 1994-02-18 1994-08-23 有限会社野々川商事 染毛用ブラシ
JP2768265B2 (ja) * 1994-04-15 1998-06-25 株式会社デンソー 半導体装置
JP2803565B2 (ja) * 1994-04-15 1998-09-24 株式会社デンソー 半導体装置の製造方法
US6146913A (en) * 1998-08-31 2000-11-14 Lucent Technologies Inc. Method for making enhanced performance field effect devices
FR2789226B1 (fr) 1999-01-29 2002-06-14 Commissariat Energie Atomique Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi
JP2002208702A (ja) * 2001-01-10 2002-07-26 Mitsubishi Electric Corp パワー半導体装置
DE102006023429B4 (de) * 2006-05-18 2011-03-10 Infineon Technologies Ag ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis
DE102014105790B4 (de) * 2014-04-24 2019-08-29 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit elektrostatischer Entladungsschutzstruktur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US3636418A (en) * 1969-08-06 1972-01-18 Rca Corp Epitaxial semiconductor device having adherent bonding pads

Also Published As

Publication number Publication date
CA966935A (en) 1975-04-29
DE2226613B2 (de) 1977-12-22
NL7207246A (fr) 1973-03-06
SE376116B (fr) 1975-05-05
GB1339250A (en) 1973-11-28
JPS5138588B2 (fr) 1976-10-22
FR2150684A1 (fr) 1973-04-13
DE2226613A1 (de) 1973-03-15
FR2150684B1 (fr) 1977-07-22
AU459838B2 (en) 1975-04-10
DE2226613C3 (de) 1978-08-24
IT955274B (it) 1973-09-29
JPS4837084A (fr) 1973-05-31
AU4279172A (en) 1973-11-29
US3728591A (en) 1973-04-17

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