DE2215470A1 - Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents

Halbleiterbauelement und Verfahren zu seiner Herstellung

Info

Publication number
DE2215470A1
DE2215470A1 DE19722215470 DE2215470A DE2215470A1 DE 2215470 A1 DE2215470 A1 DE 2215470A1 DE 19722215470 DE19722215470 DE 19722215470 DE 2215470 A DE2215470 A DE 2215470A DE 2215470 A1 DE2215470 A1 DE 2215470A1
Authority
DE
Germany
Prior art keywords
electrodes
layer
metal
field
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19722215470
Other languages
German (de)
English (en)
Inventor
Dean Robert Dallas; McMahon William Raymond Richardson; Tex. Collins (V.StA.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE2215470A1 publication Critical patent/DE2215470A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE19722215470 1971-04-01 1972-03-29 Halbleiterbauelement und Verfahren zu seiner Herstellung Ceased DE2215470A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13035871A 1971-04-01 1971-04-01

Publications (1)

Publication Number Publication Date
DE2215470A1 true DE2215470A1 (de) 1972-10-19

Family

ID=22444311

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722215470 Ceased DE2215470A1 (de) 1971-04-01 1972-03-29 Halbleiterbauelement und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US3756924A (https=)
DE (1) DE2215470A1 (https=)
FR (1) FR2132181B1 (https=)
GB (1) GB1366575A (https=)
NL (1) NL7204146A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2409664A1 (de) * 1973-02-28 1974-10-17 Hitachi Ltd Ladungsueberfuehrungs-halbleiterstruktur und verfahren zu ihrer herstellung

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163239A (en) * 1971-12-30 1979-07-31 Texas Instruments Incorporated Second level phase lines for CCD line imager
US3863332A (en) * 1973-06-28 1975-02-04 Hughes Aircraft Co Method of fabricating back panel for liquid crystal display
US3967306A (en) * 1973-08-01 1976-06-29 Trw Inc. Asymmetrical well charge coupled device
US3886580A (en) * 1973-10-09 1975-05-27 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
US3987538A (en) * 1973-12-26 1976-10-26 Texas Instruments Incorporated Method of making devices having closely spaced electrodes
JPS5722885B2 (https=) * 1974-02-18 1982-05-15
US3946421A (en) * 1974-06-28 1976-03-23 Texas Instruments Incorporated Multi phase double level metal charge coupled device
GB1503411A (en) * 1976-01-16 1978-03-08 Nat Res Dev Gaas mosfet
US4075650A (en) * 1976-04-09 1978-02-21 Cutler-Hammer, Inc. Millimeter wave semiconductor device
US4091409A (en) * 1976-12-27 1978-05-23 Rca Corporation Semiconductor device having symmetrical current distribution
DE2702571C3 (de) * 1977-01-22 1982-02-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Kontaktstruktur für ein Vielfach- Halbleiterbauelement
US4222164A (en) * 1978-12-29 1980-09-16 International Business Machines Corporation Method of fabrication of self-aligned metal-semiconductor field effect transistors
DE3221936A1 (de) * 1982-06-11 1983-12-22 Chevron Research Co., 94105 San Francisco, Calif. Verfahren zur selektiven herstellung eines produktes mit einem erheblichen benzolgehalt aus normalen und leicht verzweigten kohlenwasserstoffen
EP0179650A3 (en) * 1984-10-24 1988-01-07 Stephen Anthony RAWLINGS Pad for absorbtion of body odour
US20070052047A1 (en) * 2005-09-01 2007-03-08 Costas Hadjiloucas Metal contact systems for semiconductor-based pressure sensors exposed to harsh chemical and thermal environments

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2409664A1 (de) * 1973-02-28 1974-10-17 Hitachi Ltd Ladungsueberfuehrungs-halbleiterstruktur und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
GB1366575A (en) 1974-09-11
NL7204146A (https=) 1972-10-03
FR2132181A1 (https=) 1972-11-17
US3756924A (en) 1973-09-04
FR2132181B1 (https=) 1977-08-19

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Legal Events

Date Code Title Description
OD Request for examination
8131 Rejection
8178 Suspension cancelled