DE2214224C3 - Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen - Google Patents

Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen

Info

Publication number
DE2214224C3
DE2214224C3 DE2214224A DE2214224A DE2214224C3 DE 2214224 C3 DE2214224 C3 DE 2214224C3 DE 2214224 A DE2214224 A DE 2214224A DE 2214224 A DE2214224 A DE 2214224A DE 2214224 C3 DE2214224 C3 DE 2214224C3
Authority
DE
Germany
Prior art keywords
iii
protective layer
semiconductor
atoms
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2214224A
Other languages
German (de)
English (en)
Other versions
DE2214224B2 (de
DE2214224A1 (de
Inventor
Wolfgang Dipl.-Phys. Dr.- Ing. 8000 Muenchen Touchy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2214224A priority Critical patent/DE2214224C3/de
Priority to AT1046072A priority patent/AT317316B/de
Priority to NL7217305A priority patent/NL7217305A/xx
Priority to FR7246171A priority patent/FR2176669B1/fr
Priority to GB9773A priority patent/GB1388641A/en
Priority to CH76173A priority patent/CH576808A5/xx
Priority to US339218A priority patent/US3925121A/en
Priority to CA166,196A priority patent/CA1002433A/en
Priority to IT21963/73A priority patent/IT981579B/it
Priority to JP3340373A priority patent/JPS5231147B2/ja
Priority to SE7304137A priority patent/SE378156B/xx
Publication of DE2214224A1 publication Critical patent/DE2214224A1/de
Publication of DE2214224B2 publication Critical patent/DE2214224B2/de
Application granted granted Critical
Publication of DE2214224C3 publication Critical patent/DE2214224C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H10P32/14—
    • H10P32/174—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE2214224A 1972-03-23 1972-03-23 Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen Expired DE2214224C3 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE2214224A DE2214224C3 (de) 1972-03-23 1972-03-23 Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen
AT1046072A AT317316B (de) 1972-03-23 1972-12-07 Verfahren zum Herstellen von III - V - Halbleitereinkristallen für elektrolumineszierende Halbleiterbauelemente
NL7217305A NL7217305A (show.php) 1972-03-23 1972-12-19
FR7246171A FR2176669B1 (show.php) 1972-03-23 1972-12-26
GB9773A GB1388641A (en) 1972-03-23 1973-01-01 Monocrystals ofiii-v semiconductor compounds
CH76173A CH576808A5 (show.php) 1972-03-23 1973-01-19
US339218A US3925121A (en) 1972-03-23 1973-03-08 Production of semiconductive monocrystals of group iii-v semiconductor compounds
CA166,196A CA1002433A (en) 1972-03-23 1973-03-15 Monocrystals of iii-v semiconductor compounds
IT21963/73A IT981579B (it) 1972-03-23 1973-03-22 Procedimento di diffusione in composti semiconduttori iii v
JP3340373A JPS5231147B2 (show.php) 1972-03-23 1973-03-23
SE7304137A SE378156B (show.php) 1972-03-23 1973-03-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2214224A DE2214224C3 (de) 1972-03-23 1972-03-23 Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen

Publications (3)

Publication Number Publication Date
DE2214224A1 DE2214224A1 (de) 1973-10-04
DE2214224B2 DE2214224B2 (de) 1977-09-08
DE2214224C3 true DE2214224C3 (de) 1978-05-03

Family

ID=5839948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2214224A Expired DE2214224C3 (de) 1972-03-23 1972-03-23 Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen

Country Status (11)

Country Link
US (1) US3925121A (show.php)
JP (1) JPS5231147B2 (show.php)
AT (1) AT317316B (show.php)
CA (1) CA1002433A (show.php)
CH (1) CH576808A5 (show.php)
DE (1) DE2214224C3 (show.php)
FR (1) FR2176669B1 (show.php)
GB (1) GB1388641A (show.php)
IT (1) IT981579B (show.php)
NL (1) NL7217305A (show.php)
SE (1) SE378156B (show.php)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099997A (en) * 1976-06-21 1978-07-11 Rca Corporation Method of fabricating a semiconductor device
JPS6030204Y2 (ja) * 1981-07-29 1985-09-11 東京パ−ツ株式会社 ブラシ付蓋を有する粘性液用容器
JPS6057923A (ja) * 1983-09-09 1985-04-03 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体結晶の均質化方法
US4502898A (en) * 1983-12-21 1985-03-05 At&T Bell Laboratories Diffusion procedure for semiconductor compound
US4634474A (en) * 1984-10-09 1987-01-06 At&T Bell Laboratories Coating of III-V and II-VI compound semiconductors
JPS62441U (show.php) * 1985-06-20 1987-01-06
EP0377940B1 (en) * 1989-01-13 1994-11-17 Kabushiki Kaisha Toshiba Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
US6297538B1 (en) 1998-03-23 2001-10-02 The University Of Delaware Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate
US7439609B2 (en) * 2004-03-29 2008-10-21 Cree, Inc. Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
US9275854B2 (en) * 2013-08-07 2016-03-01 Globalfoundries Inc. Compound semiconductor integrated circuit and method to fabricate same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245847A (en) * 1962-11-19 1966-04-12 Hughes Aircraft Co Method of producing stable gallium arsenide and semiconductor diodes made therefrom
US3255056A (en) * 1963-05-20 1966-06-07 Rca Corp Method of forming semiconductor junction
US3298879A (en) * 1964-03-23 1967-01-17 Rca Corp Method of fabricating a semiconductor by masking
US3408238A (en) * 1965-06-02 1968-10-29 Texas Instruments Inc Use of both silicon oxide and phosphorus oxide to mask against diffusion of indium or gallium into germanium semiconductor device
US3422322A (en) * 1965-08-25 1969-01-14 Texas Instruments Inc Drift transistor
GB1098564A (en) * 1966-09-20 1968-01-10 Standard Telephones Cables Ltd A method for producing gallium arsenide devices
US3537921A (en) * 1967-02-28 1970-11-03 Motorola Inc Selective hydrofluoric acid etching and subsequent processing
JPS4915903B1 (show.php) * 1969-08-18 1974-04-18
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Nichts ermittelt *

Also Published As

Publication number Publication date
NL7217305A (show.php) 1973-09-25
DE2214224B2 (de) 1977-09-08
FR2176669B1 (show.php) 1977-02-25
JPS499184A (show.php) 1974-01-26
GB1388641A (en) 1975-03-26
DE2214224A1 (de) 1973-10-04
US3925121A (en) 1975-12-09
IT981579B (it) 1974-10-10
USB339218I5 (show.php) 1975-01-28
JPS5231147B2 (show.php) 1977-08-12
AT317316B (de) 1974-08-26
FR2176669A1 (show.php) 1973-11-02
CA1002433A (en) 1976-12-28
CH576808A5 (show.php) 1976-06-30
SE378156B (show.php) 1975-08-18

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee