DE2156748A1 - Schottky-Sperrschicht-Diode - Google Patents
Schottky-Sperrschicht-DiodeInfo
- Publication number
- DE2156748A1 DE2156748A1 DE19712156748 DE2156748A DE2156748A1 DE 2156748 A1 DE2156748 A1 DE 2156748A1 DE 19712156748 DE19712156748 DE 19712156748 DE 2156748 A DE2156748 A DE 2156748A DE 2156748 A1 DE2156748 A1 DE 2156748A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- semiconductor
- metal film
- protective ring
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title description 11
- 239000004065 semiconductor Substances 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 230000001681 protective effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 4
- 239000012777 electrically insulating material Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9296870A | 1970-11-27 | 1970-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2156748A1 true DE2156748A1 (de) | 1972-06-08 |
Family
ID=22236018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712156748 Pending DE2156748A1 (de) | 1970-11-27 | 1971-11-16 | Schottky-Sperrschicht-Diode |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3694719A (OSRAM) |
| JP (1) | JPS5121747B1 (OSRAM) |
| AU (1) | AU459152B2 (OSRAM) |
| BE (1) | BE775936A (OSRAM) |
| CA (1) | CA936970A (OSRAM) |
| DE (1) | DE2156748A1 (OSRAM) |
| FR (1) | FR2115369B1 (OSRAM) |
| GB (1) | GB1354802A (OSRAM) |
| IT (1) | IT939112B (OSRAM) |
| NL (1) | NL7116277A (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232467A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド |
| JP3272242B2 (ja) * | 1995-06-09 | 2002-04-08 | 三洋電機株式会社 | 半導体装置 |
| US5859465A (en) * | 1996-10-15 | 1999-01-12 | International Rectifier Corporation | High voltage power schottky with aluminum barrier metal spaced from first diffused ring |
| US6066884A (en) * | 1999-03-19 | 2000-05-23 | Lucent Technologies Inc. | Schottky diode guard ring structures |
| US7439146B1 (en) | 2000-08-30 | 2008-10-21 | Agere Systems Inc. | Field plated resistor with enhanced routing area thereover |
| US6690037B1 (en) | 2000-08-31 | 2004-02-10 | Agere Systems Inc. | Field plated Schottky diode |
| US20050275057A1 (en) * | 2004-06-15 | 2005-12-15 | Breen Marc L | Schottky diode with dielectric isolation |
-
1970
- 1970-11-27 US US92968A patent/US3694719A/en not_active Expired - Lifetime
-
1971
- 1971-10-21 CA CA125813A patent/CA936970A/en not_active Expired
- 1971-10-22 IT IT30221/71A patent/IT939112B/it active
- 1971-11-16 DE DE19712156748 patent/DE2156748A1/de active Pending
- 1971-11-17 AU AU35819/71A patent/AU459152B2/en not_active Expired
- 1971-11-18 GB GB5370671A patent/GB1354802A/en not_active Expired
- 1971-11-24 FR FR7142040A patent/FR2115369B1/fr not_active Expired
- 1971-11-26 NL NL7116277A patent/NL7116277A/xx not_active Application Discontinuation
- 1971-11-26 JP JP46095062A patent/JPS5121747B1/ja active Pending
- 1971-11-26 BE BE775936A patent/BE775936A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2115369B1 (OSRAM) | 1975-08-29 |
| US3694719A (en) | 1972-09-26 |
| AU459152B2 (en) | 1975-02-27 |
| JPS5121747B1 (OSRAM) | 1976-07-05 |
| NL7116277A (OSRAM) | 1972-05-30 |
| CA936970A (en) | 1973-11-13 |
| BE775936A (fr) | 1972-03-16 |
| GB1354802A (en) | 1974-06-05 |
| IT939112B (it) | 1973-02-10 |
| AU3581971A (en) | 1973-05-24 |
| FR2115369A1 (OSRAM) | 1972-07-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| OHN | Withdrawal |