DE2153879A1 - Mehrphasenschaltung mit Feldeffekt transistoren mit isolierter Gate Elektrode - Google Patents
Mehrphasenschaltung mit Feldeffekt transistoren mit isolierter Gate ElektrodeInfo
- Publication number
- DE2153879A1 DE2153879A1 DE19712153879 DE2153879A DE2153879A1 DE 2153879 A1 DE2153879 A1 DE 2153879A1 DE 19712153879 DE19712153879 DE 19712153879 DE 2153879 A DE2153879 A DE 2153879A DE 2153879 A1 DE2153879 A1 DE 2153879A1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- transistor
- phase
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- SSORSZACHCNXSJ-UHFFFAOYSA-N 2-[2-(3,4-dichlorophenyl)-3-[2-(2-hydroxypropylamino)pyrimidin-4-yl]imidazol-4-yl]acetonitrile Chemical compound ClC=1C=C(C=CC=1Cl)C=1N(C(=CN=1)CC#N)C1=NC(=NC=C1)NCC(C)O SSORSZACHCNXSJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8587970A | 1970-11-02 | 1970-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2153879A1 true DE2153879A1 (de) | 1972-05-10 |
Family
ID=22194566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712153879 Pending DE2153879A1 (de) | 1970-11-02 | 1971-10-28 | Mehrphasenschaltung mit Feldeffekt transistoren mit isolierter Gate Elektrode |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2153879A1 (enExample) |
| FR (1) | FR2112395B1 (enExample) |
| GB (1) | GB1347308A (enExample) |
-
1971
- 1971-10-08 GB GB4689171A patent/GB1347308A/en not_active Expired
- 1971-10-28 DE DE19712153879 patent/DE2153879A1/de active Pending
- 1971-11-02 FR FR7139180A patent/FR2112395B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2112395A1 (enExample) | 1972-06-16 |
| FR2112395B1 (enExample) | 1975-07-18 |
| GB1347308A (en) | 1974-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |