DE2132652C3 - Verfahren zum Herstellen eines Festwertspeichers - Google Patents

Verfahren zum Herstellen eines Festwertspeichers

Info

Publication number
DE2132652C3
DE2132652C3 DE2132652A DE2132652A DE2132652C3 DE 2132652 C3 DE2132652 C3 DE 2132652C3 DE 2132652 A DE2132652 A DE 2132652A DE 2132652 A DE2132652 A DE 2132652A DE 2132652 C3 DE2132652 C3 DE 2132652C3
Authority
DE
Germany
Prior art keywords
transistor
pulses
write
current
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2132652A
Other languages
German (de)
English (en)
Other versions
DE2132652B2 (enExample
DE2132652A1 (de
Inventor
Lloyd Dale Santa Clara Fagan
Joseph Donald Los Gatos Rizzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Publication of DE2132652A1 publication Critical patent/DE2132652A1/de
Publication of DE2132652B2 publication Critical patent/DE2132652B2/de
Application granted granted Critical
Publication of DE2132652C3 publication Critical patent/DE2132652C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
DE2132652A 1970-07-13 1971-06-30 Verfahren zum Herstellen eines Festwertspeichers Expired DE2132652C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5453170A 1970-07-13 1970-07-13
US13970571A 1971-05-03 1971-05-03

Publications (3)

Publication Number Publication Date
DE2132652A1 DE2132652A1 (de) 1972-01-20
DE2132652B2 DE2132652B2 (enExample) 1980-02-28
DE2132652C3 true DE2132652C3 (de) 1980-11-20

Family

ID=26733133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2132652A Expired DE2132652C3 (de) 1970-07-13 1971-06-30 Verfahren zum Herstellen eines Festwertspeichers

Country Status (4)

Country Link
US (1) US3742592A (enExample)
JP (1) JPS5242015B1 (enExample)
CA (1) CA940635A (enExample)
DE (1) DE2132652C3 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2256688B2 (de) * 1972-11-18 1976-05-06 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zum auftrennen von leiterbahnen auf integrierten schaltkreisen
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same
US3934233A (en) * 1973-09-24 1976-01-20 Texas Instruments Incorporated Read-only-memory for electronic calculator
US4021781A (en) * 1974-11-19 1977-05-03 Texas Instruments Incorporated Virtual ground read-only-memory for electronic calculator or digital processor
US4145702A (en) * 1977-07-05 1979-03-20 Burroughs Corporation Electrically programmable read-only-memory device
JPS607388B2 (ja) * 1978-09-08 1985-02-23 富士通株式会社 半導体記憶装置
US4692787A (en) * 1980-05-23 1987-09-08 Texas Instruments Incorporated Programmable read-only-memory element with polycrystalline silicon layer
US4420820A (en) * 1980-12-29 1983-12-13 Signetics Corporation Programmable read-only memory
JPS57143798A (en) * 1981-03-02 1982-09-06 Fujitsu Ltd Programmable element
US4961102A (en) * 1982-01-04 1990-10-02 Shideler Jay A Junction programmable vertical transistor with high performance transistor
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4480318A (en) * 1982-02-18 1984-10-30 Fairchild Camera & Instrument Corp. Method of programming of junction-programmable read-only memories
JPS59152594A (ja) * 1983-02-21 1984-08-31 Hitachi Ltd 半導体記憶装置
JPS60160786A (ja) * 1984-02-01 1985-08-22 Clarion Co Ltd 映像音声記録媒体の再生システムに使用可能な台詞文字表示装置
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4899205A (en) * 1986-05-09 1990-02-06 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US5266829A (en) * 1986-05-09 1993-11-30 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element
US4943538A (en) * 1986-05-09 1990-07-24 Actel Corporation Programmable low impedance anti-fuse element
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US4874711A (en) * 1987-05-26 1989-10-17 Georgia Tech Research Corporation Method for altering characteristics of active semiconductor devices
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US5920771A (en) * 1997-03-17 1999-07-06 Gennum Corporation Method of making antifuse based on silicided single polysilicon bipolar transistor
US6218722B1 (en) 1997-02-14 2001-04-17 Gennum Corporation Antifuse based on silicided polysilicon bipolar transistor
NO973993L (no) * 1997-09-01 1999-03-02 Opticom As Leseminne og leseminneinnretninger
US7292066B2 (en) * 2005-04-27 2007-11-06 Stmicroelectronics, Inc. One-time programmable circuit exploiting BJT hFE degradation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3191151A (en) * 1962-11-26 1965-06-22 Fairchild Camera Instr Co Programmable circuit
US3437890A (en) * 1963-05-10 1969-04-08 Ibm Diffused-epitaxial scanistors
US3423822A (en) * 1967-02-27 1969-01-28 Northern Electric Co Method of making large scale integrated circuit
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente

Also Published As

Publication number Publication date
US3742592A (en) 1973-07-03
DE2132652B2 (enExample) 1980-02-28
CA940635A (en) 1974-01-22
JPS5242015B1 (enExample) 1977-10-21
DE2132652A1 (de) 1972-01-20

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)