DE2119527A1 - Verfahren zum Atzen eines Films - Google Patents

Verfahren zum Atzen eines Films

Info

Publication number
DE2119527A1
DE2119527A1 DE19712119527 DE2119527A DE2119527A1 DE 2119527 A1 DE2119527 A1 DE 2119527A1 DE 19712119527 DE19712119527 DE 19712119527 DE 2119527 A DE2119527 A DE 2119527A DE 2119527 A1 DE2119527 A1 DE 2119527A1
Authority
DE
Germany
Prior art keywords
etching
film
depth
different
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19712119527
Other languages
German (de)
English (en)
Inventor
Michael Ossimng N Y Hatzakis (V St A)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2119527A1 publication Critical patent/DE2119527A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10P34/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
DE19712119527 1970-06-12 1971-04-22 Verfahren zum Atzen eines Films Withdrawn DE2119527A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4567670A 1970-06-12 1970-06-12

Publications (1)

Publication Number Publication Date
DE2119527A1 true DE2119527A1 (de) 1971-12-16

Family

ID=21939278

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712119527 Withdrawn DE2119527A1 (de) 1970-06-12 1971-04-22 Verfahren zum Atzen eines Films

Country Status (5)

Country Link
US (1) US3649393A (enExample)
JP (1) JPS5337300B1 (enExample)
DE (1) DE2119527A1 (enExample)
FR (1) FR2095201B1 (enExample)
GB (1) GB1276076A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2528666A1 (de) * 1974-07-19 1976-01-29 Ibm Verfahren zur herstellung einer maske fuer roentgenstrahl-lithographie

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3830686A (en) * 1972-04-10 1974-08-20 W Lehrer Photomasks and method of fabrication thereof
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
US3922184A (en) * 1973-12-26 1975-11-25 Ibm Method for forming openings through insulative layers in the fabrication of integrated circuits
US3961101A (en) * 1974-09-16 1976-06-01 Rca Corporation Process for improved development of electron-beam-sensitive resist films
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
US4001061A (en) * 1975-03-05 1977-01-04 International Business Machines Corporation Single lithography for multiple-layer bubble domain devices
US4035226A (en) * 1975-04-14 1977-07-12 Rca Corporation Method of preparing portions of a semiconductor wafer surface for further processing
US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
US4040891A (en) * 1976-06-30 1977-08-09 Ibm Corporation Etching process utilizing the same positive photoresist layer for two etching steps
DE2757931A1 (de) * 1977-12-24 1979-07-12 Licentia Gmbh Verfahren zum herstellen von positiven aetzresistenten masken
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device
US4337132A (en) * 1980-11-14 1982-06-29 Rockwell International Corporation Ion etching process with minimized redeposition
US4684436A (en) * 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
US5789300A (en) * 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US5985766A (en) 1997-02-27 1999-11-16 Micron Technology, Inc. Semiconductor processing methods of forming a contact opening
US6759173B2 (en) 2000-10-26 2004-07-06 Shipley Company, L.L.C. Single mask process for patterning microchip having grayscale and micromachined features
TWI475705B (zh) * 2009-07-23 2015-03-01 Kuo Ching Chiang 具有聚光元件及高有效面積之太陽能電池及其製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541596A (fr) * 1966-10-24 1968-10-04 Westinghouse Electric Corp Procédé de délimitation de petites surfaces dans la fabrication d'éléments microélectroniques

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2528666A1 (de) * 1974-07-19 1976-01-29 Ibm Verfahren zur herstellung einer maske fuer roentgenstrahl-lithographie

Also Published As

Publication number Publication date
FR2095201A1 (enExample) 1972-02-11
GB1276076A (en) 1972-06-01
JPS5337300B1 (enExample) 1978-10-07
US3649393A (en) 1972-03-14
FR2095201B1 (enExample) 1976-05-28

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee