JPS5337300B1 - - Google Patents

Info

Publication number
JPS5337300B1
JPS5337300B1 JP2994871A JP2994871A JPS5337300B1 JP S5337300 B1 JPS5337300 B1 JP S5337300B1 JP 2994871 A JP2994871 A JP 2994871A JP 2994871 A JP2994871 A JP 2994871A JP S5337300 B1 JPS5337300 B1 JP S5337300B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2994871A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5337300B1 publication Critical patent/JPS5337300B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P34/40
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H10P95/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/948Radiation resist
    • Y10S438/949Energy beam treating radiation resist on semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP2994871A 1970-06-12 1971-05-07 Pending JPS5337300B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4567670A 1970-06-12 1970-06-12

Publications (1)

Publication Number Publication Date
JPS5337300B1 true JPS5337300B1 (enExample) 1978-10-07

Family

ID=21939278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2994871A Pending JPS5337300B1 (enExample) 1970-06-12 1971-05-07

Country Status (5)

Country Link
US (1) US3649393A (enExample)
JP (1) JPS5337300B1 (enExample)
DE (1) DE2119527A1 (enExample)
FR (1) FR2095201B1 (enExample)
GB (1) GB1276076A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3830686A (en) * 1972-04-10 1974-08-20 W Lehrer Photomasks and method of fabrication thereof
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
US3922184A (en) * 1973-12-26 1975-11-25 Ibm Method for forming openings through insulative layers in the fabrication of integrated circuits
FR2279135A1 (fr) * 1974-07-19 1976-02-13 Ibm Procede de fabrication d'un masque pour lithographie aux rayons x
US3961101A (en) * 1974-09-16 1976-06-01 Rca Corporation Process for improved development of electron-beam-sensitive resist films
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
US4001061A (en) * 1975-03-05 1977-01-04 International Business Machines Corporation Single lithography for multiple-layer bubble domain devices
US4035226A (en) * 1975-04-14 1977-07-12 Rca Corporation Method of preparing portions of a semiconductor wafer surface for further processing
US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
US4040891A (en) * 1976-06-30 1977-08-09 Ibm Corporation Etching process utilizing the same positive photoresist layer for two etching steps
DE2757931A1 (de) * 1977-12-24 1979-07-12 Licentia Gmbh Verfahren zum herstellen von positiven aetzresistenten masken
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device
US4337132A (en) * 1980-11-14 1982-06-29 Rockwell International Corporation Ion etching process with minimized redeposition
US4684436A (en) * 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
US5789300A (en) * 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US5985766A (en) 1997-02-27 1999-11-16 Micron Technology, Inc. Semiconductor processing methods of forming a contact opening
US6759173B2 (en) 2000-10-26 2004-07-06 Shipley Company, L.L.C. Single mask process for patterning microchip having grayscale and micromachined features
TWI475705B (zh) * 2009-07-23 2015-03-01 Kuo Ching Chiang 具有聚光元件及高有效面積之太陽能電池及其製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1541596A (fr) * 1966-10-24 1968-10-04 Westinghouse Electric Corp Procédé de délimitation de petites surfaces dans la fabrication d'éléments microélectroniques

Also Published As

Publication number Publication date
FR2095201A1 (enExample) 1972-02-11
GB1276076A (en) 1972-06-01
US3649393A (en) 1972-03-14
FR2095201B1 (enExample) 1976-05-28
DE2119527A1 (de) 1971-12-16

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