DE2117199C3 - Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen - Google Patents

Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen

Info

Publication number
DE2117199C3
DE2117199C3 DE2117199A DE2117199A DE2117199C3 DE 2117199 C3 DE2117199 C3 DE 2117199C3 DE 2117199 A DE2117199 A DE 2117199A DE 2117199 A DE2117199 A DE 2117199A DE 2117199 C3 DE2117199 C3 DE 2117199C3
Authority
DE
Germany
Prior art keywords
layer
etched
etching
etching mask
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2117199A
Other languages
German (de)
English (en)
Other versions
DE2117199A1 (de
DE2117199B2 (de
Inventor
Heinz Dipl.-Phys.Dr. 2000 Hamburg Dimigen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Original Assignee
Philips Patentverwaltung GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE2117199A priority Critical patent/DE2117199C3/de
Application filed by Philips Patentverwaltung GmbH filed Critical Philips Patentverwaltung GmbH
Priority to US00241243A priority patent/US3839177A/en
Priority to NL7204499A priority patent/NL7204499A/xx
Priority to CA138,894A priority patent/CA966085A/en
Priority to GB1567372A priority patent/GB1383848A/en
Priority to IT89547/72A priority patent/IT960866B/it
Priority to JP47033607A priority patent/JPS5123265B1/ja
Priority to FR7212244A priority patent/FR2132745B1/fr
Publication of DE2117199A1 publication Critical patent/DE2117199A1/de
Publication of DE2117199B2 publication Critical patent/DE2117199B2/de
Application granted granted Critical
Publication of DE2117199C3 publication Critical patent/DE2117199C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/08—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by electric discharge, e.g. by spark erosion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
DE2117199A 1971-04-08 1971-04-08 Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen Expired DE2117199C3 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE2117199A DE2117199C3 (de) 1971-04-08 1971-04-08 Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen
NL7204499A NL7204499A (enExample) 1971-04-08 1972-04-05
CA138,894A CA966085A (en) 1971-04-08 1972-04-05 Method of manufacturing etched patterns in thin layers having defined edge profiles
GB1567372A GB1383848A (en) 1971-04-08 1972-04-05 Manufacturing etched patterns
US00241243A US3839177A (en) 1971-04-08 1972-04-05 Method of manufacturing etched patterns in thin layers having defined edge profiles
IT89547/72A IT960866B (it) 1971-04-08 1972-04-05 Procedimento per l esecuzione di disegni incisi in strati sottili aventi profili definiti dei bordi particolarmente in applicazione a circuiti elettrici a strato so lido
JP47033607A JPS5123265B1 (enExample) 1971-04-08 1972-04-05
FR7212244A FR2132745B1 (enExample) 1971-04-08 1972-04-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2117199A DE2117199C3 (de) 1971-04-08 1971-04-08 Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen

Publications (3)

Publication Number Publication Date
DE2117199A1 DE2117199A1 (de) 1972-10-12
DE2117199B2 DE2117199B2 (de) 1974-01-24
DE2117199C3 true DE2117199C3 (de) 1974-08-22

Family

ID=5804229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2117199A Expired DE2117199C3 (de) 1971-04-08 1971-04-08 Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen

Country Status (8)

Country Link
US (1) US3839177A (enExample)
JP (1) JPS5123265B1 (enExample)
CA (1) CA966085A (enExample)
DE (1) DE2117199C3 (enExample)
FR (1) FR2132745B1 (enExample)
GB (1) GB1383848A (enExample)
IT (1) IT960866B (enExample)
NL (1) NL7204499A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7213625A (enExample) * 1972-10-07 1974-04-09
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
US4123663A (en) * 1975-01-22 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
NL7607298A (nl) * 1976-07-02 1978-01-04 Philips Nv Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze.
JPS5812234B2 (ja) * 1976-12-24 1983-03-07 一實 奥田 表示入りダイヤモンドの製造方法
NL8303316A (nl) * 1983-09-28 1985-04-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting voor het uitzenden van licht.
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
EP0187882B1 (de) * 1985-01-17 1989-04-05 Ibm Deutschland Gmbh Verfahren zur Herstellung von Kontakten mit niedrigem Übergangswiderstand
DE10135872A1 (de) * 2001-07-24 2003-02-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Linse

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3410774A (en) * 1965-10-23 1968-11-12 Ibm Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching
US3479269A (en) * 1967-01-04 1969-11-18 Bell Telephone Labor Inc Method for sputter etching using a high frequency negative pulse train
US3483108A (en) * 1967-05-29 1969-12-09 Gen Electric Method of chemically etching a non-conductive material using an electrolytically controlled mask
US3585121A (en) * 1967-11-17 1971-06-15 Nat Res Dev Diffraction gratings
US3676317A (en) * 1970-10-23 1972-07-11 Stromberg Datagraphix Inc Sputter etching process
US3733258A (en) * 1971-02-03 1973-05-15 Rca Corp Sputter-etching technique for recording holograms or other fine-detail relief patterns in hard durable materials

Also Published As

Publication number Publication date
DE2117199A1 (de) 1972-10-12
CA966085A (en) 1975-04-15
JPS5123265B1 (enExample) 1976-07-15
DE2117199B2 (de) 1974-01-24
US3839177A (en) 1974-10-01
FR2132745A1 (enExample) 1972-11-24
NL7204499A (enExample) 1972-10-10
IT960866B (it) 1973-11-30
GB1383848A (en) 1974-02-12
FR2132745B1 (enExample) 1976-06-11

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee