DE2110289C3 - Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung - Google Patents
Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner DurchführungInfo
- Publication number
- DE2110289C3 DE2110289C3 DE2110289A DE2110289A DE2110289C3 DE 2110289 C3 DE2110289 C3 DE 2110289C3 DE 2110289 A DE2110289 A DE 2110289A DE 2110289 A DE2110289 A DE 2110289A DE 2110289 C3 DE2110289 C3 DE 2110289C3
- Authority
- DE
- Germany
- Prior art keywords
- susceptor
- substrates
- tube
- gas
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000000151 deposition Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 27
- 239000012495 reaction gas Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003197 gene knockdown Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45585—Compression of gas before it reaches the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7003431A NL7003431A (enrdf_load_stackoverflow) | 1970-03-11 | 1970-03-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2110289A1 DE2110289A1 (de) | 1971-09-23 |
| DE2110289B2 DE2110289B2 (de) | 1980-03-13 |
| DE2110289C3 true DE2110289C3 (de) | 1980-10-30 |
Family
ID=19809548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2110289A Expired DE2110289C3 (de) | 1970-03-11 | 1971-03-04 | Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung |
Country Status (11)
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5242075A (en) * | 1975-09-29 | 1977-04-01 | Nippon Denso Co Ltd | Device for controlling gas atmosphere in semiconductor producing equip ment |
| GB1524326A (en) * | 1976-04-13 | 1978-09-13 | Bfg Glassgroup | Coating of glass |
| JPS5944771B2 (ja) * | 1979-03-29 | 1984-11-01 | テルサ−ムコ株式会社 | 半導体熱処理炉 |
| JPS5942970B2 (ja) * | 1979-03-29 | 1984-10-18 | テルサ−ムコ株式会社 | 半導体熱処理用反応管 |
| JPS5923464B2 (ja) * | 1979-04-18 | 1984-06-02 | テルサ−ムコ株式会社 | 半導体熱処理装置 |
| US4325319A (en) * | 1980-01-18 | 1982-04-20 | Caterpillar Tractor Co. | Air flow system for the charging conductor in an electrostatic painting system |
| US4834022A (en) * | 1985-11-08 | 1989-05-30 | Focus Semiconductor Systems, Inc. | CVD reactor and gas injection system |
| US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
| FR2612946B1 (fr) * | 1987-03-27 | 1993-02-19 | Chimie Metal | Procede et installation pour le depot chimique de revetements ultradurs a temperature moderee |
| US5221556A (en) * | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
| DE3721636A1 (de) * | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | Quarzglasreaktor fuer mocvd-anlagen |
| DE3884810T2 (de) * | 1988-06-22 | 1994-05-05 | Advanced Semiconductor Mat | Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag. |
| US4993358A (en) * | 1989-07-28 | 1991-02-19 | Watkins-Johnson Company | Chemical vapor deposition reactor and method of operation |
| US6090211A (en) * | 1996-03-27 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for forming semiconductor thin layer |
| JP3068075B2 (ja) * | 1998-01-17 | 2000-07-24 | ハンベック コーポレイション | 化合物半導体製造用水平反応炉 |
| SE9801190D0 (sv) * | 1998-04-06 | 1998-04-06 | Abb Research Ltd | A method and a device for epitaxial growth of objects by Chemical Vapour Deposition |
| TW544775B (en) * | 2001-02-28 | 2003-08-01 | Japan Pionics | Chemical vapor deposition apparatus and chemical vapor deposition method |
| US6626997B2 (en) | 2001-05-17 | 2003-09-30 | Nathan P. Shapiro | Continuous processing chamber |
| US20060096531A1 (en) * | 2002-06-10 | 2006-05-11 | Tokyo Electron Limited | Processing device and processing method |
| US8124170B1 (en) * | 2004-01-23 | 2012-02-28 | Metal Oxide Technologies, Inc | Method for forming superconductor material on a tape substrate |
| WO2005124859A2 (en) * | 2004-06-10 | 2005-12-29 | Avansys, Inc. | Methods and apparatuses for depositing uniform layers |
| US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
| JP4466723B2 (ja) * | 2007-11-21 | 2010-05-26 | 住友電気工業株式会社 | 有機金属気相成長装置 |
| US8628616B2 (en) * | 2007-12-11 | 2014-01-14 | Sumitomo Electric Industries, Ltd. | Vapor-phase process apparatus, vapor-phase process method, and substrate |
| JP5954202B2 (ja) * | 2013-01-29 | 2016-07-20 | 東京エレクトロン株式会社 | 成膜装置 |
| US11032945B2 (en) * | 2019-07-12 | 2021-06-08 | Applied Materials, Inc. | Heat shield assembly for an epitaxy chamber |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3484311A (en) * | 1966-06-21 | 1969-12-16 | Union Carbide Corp | Silicon deposition process |
| US3367304A (en) * | 1967-03-13 | 1968-02-06 | Dow Corning | Deposition chamber for manufacture of refractory coated filaments |
| US3511727A (en) * | 1967-05-08 | 1970-05-12 | Motorola Inc | Vapor phase etching and polishing of semiconductors |
-
1970
- 1970-03-11 NL NL7003431A patent/NL7003431A/xx unknown
-
1971
- 1971-03-04 US US00120983A patent/US3750620A/en not_active Expired - Lifetime
- 1971-03-04 DE DE2110289A patent/DE2110289C3/de not_active Expired
- 1971-03-08 CH CH336071A patent/CH532960A/de not_active IP Right Cessation
- 1971-03-08 SE SE02926/71A patent/SE368724B/xx unknown
- 1971-03-08 CA CA107073A patent/CA923635A/en not_active Expired
- 1971-03-08 AT AT195971A patent/AT321994B/de not_active IP Right Cessation
- 1971-03-09 BE BE764013A patent/BE764013A/xx unknown
- 1971-03-09 JP JP1223771A patent/JPS5317862B1/ja active Pending
- 1971-03-10 FR FR7108288A patent/FR2084428A5/fr not_active Expired
- 1971-04-19 GB GB2337671*A patent/GB1346938A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3750620A (en) | 1973-08-07 |
| BE764013A (fr) | 1971-09-09 |
| AT321994B (de) | 1975-04-25 |
| DE2110289B2 (de) | 1980-03-13 |
| CH532960A (de) | 1973-01-31 |
| FR2084428A5 (enrdf_load_stackoverflow) | 1971-12-17 |
| NL7003431A (enrdf_load_stackoverflow) | 1971-09-14 |
| SE368724B (enrdf_load_stackoverflow) | 1974-07-15 |
| GB1346938A (en) | 1974-02-13 |
| JPS5317862B1 (enrdf_load_stackoverflow) | 1978-06-12 |
| CA923635A (en) | 1973-03-27 |
| DE2110289A1 (de) | 1971-09-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |