NL7003431A - - Google Patents

Info

Publication number
NL7003431A
NL7003431A NL7003431A NL7003431A NL7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A
Authority
NL
Netherlands
Application number
NL7003431A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7003431A priority Critical patent/NL7003431A/xx
Priority to US00120983A priority patent/US3750620A/en
Priority to DE2110289A priority patent/DE2110289C3/de
Priority to CH336071A priority patent/CH532960A/de
Priority to AT195971A priority patent/AT321994B/de
Priority to CA107073A priority patent/CA923635A/en
Priority to SE02926/71A priority patent/SE368724B/xx
Priority to JP1223771A priority patent/JPS5317862B1/ja
Priority to BE764013A priority patent/BE764013A/xx
Priority to FR7108288A priority patent/FR2084428A5/fr
Priority to GB2337671*A priority patent/GB1346938A/en
Publication of NL7003431A publication Critical patent/NL7003431A/xx
Priority to US00360670A priority patent/US3816166A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585Compression of gas before it reaches the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
NL7003431A 1970-03-11 1970-03-11 NL7003431A (enrdf_load_stackoverflow)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (enrdf_load_stackoverflow) 1970-03-11 1970-03-11
US00120983A US3750620A (en) 1970-03-11 1971-03-04 Vapor deposition reactor
DE2110289A DE2110289C3 (de) 1970-03-11 1971-03-04 Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung
CA107073A CA923635A (en) 1970-03-11 1971-03-08 Reactor and method of manufacturing a semiconductor device with the aid of said reactor
AT195971A AT321994B (de) 1970-03-11 1971-03-08 Reaktor und verfahren zur herstellung einer halbleiteranordnung in diesem reaktor
CH336071A CH532960A (de) 1970-03-11 1971-03-08 Reaktor zum Durchführen eines Vorganges, bei dem ein Gasstrom und mindestens ein Substrat verwendet werden, und Verfahren zum Betrieb dieses Reaktors
SE02926/71A SE368724B (enrdf_load_stackoverflow) 1970-03-11 1971-03-08
JP1223771A JPS5317862B1 (enrdf_load_stackoverflow) 1970-03-11 1971-03-09
BE764013A BE764013A (fr) 1970-03-11 1971-03-09 Reacteur et procede de fabrication d'un dispositif semiconducteur a l'aide de ce reacteur
FR7108288A FR2084428A5 (enrdf_load_stackoverflow) 1970-03-11 1971-03-10
GB2337671*A GB1346938A (en) 1970-03-11 1971-04-19 Reactors and method of manufacture of semiconductor devices using such a reactor
US00360670A US3816166A (en) 1970-03-11 1973-05-16 Vapor depositing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (enrdf_load_stackoverflow) 1970-03-11 1970-03-11

Publications (1)

Publication Number Publication Date
NL7003431A true NL7003431A (enrdf_load_stackoverflow) 1971-09-14

Family

ID=19809548

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7003431A NL7003431A (enrdf_load_stackoverflow) 1970-03-11 1970-03-11

Country Status (11)

Country Link
US (1) US3750620A (enrdf_load_stackoverflow)
JP (1) JPS5317862B1 (enrdf_load_stackoverflow)
AT (1) AT321994B (enrdf_load_stackoverflow)
BE (1) BE764013A (enrdf_load_stackoverflow)
CA (1) CA923635A (enrdf_load_stackoverflow)
CH (1) CH532960A (enrdf_load_stackoverflow)
DE (1) DE2110289C3 (enrdf_load_stackoverflow)
FR (1) FR2084428A5 (enrdf_load_stackoverflow)
GB (1) GB1346938A (enrdf_load_stackoverflow)
NL (1) NL7003431A (enrdf_load_stackoverflow)
SE (1) SE368724B (enrdf_load_stackoverflow)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
FR2612946B1 (fr) * 1987-03-27 1993-02-19 Chimie Metal Procede et installation pour le depot chimique de revetements ultradurs a temperature moderee
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Quarzglasreaktor fuer mocvd-anlagen
EP0378543B1 (en) * 1988-06-22 1993-10-06 Advanced Semiconductor Materials America, Inc. Gas injector apparatus for chemical vapor deposition reactors
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
JP3068075B2 (ja) * 1998-01-17 2000-07-24 ハンベック コーポレイション 化合物半導体製造用水平反応炉
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
US20060096531A1 (en) * 2002-06-10 2006-05-11 Tokyo Electron Limited Processing device and processing method
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
WO2005124859A2 (en) * 2004-06-10 2005-12-29 Avansys, Inc. Methods and apparatuses for depositing uniform layers
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4466723B2 (ja) * 2007-11-21 2010-05-26 住友電気工業株式会社 有機金属気相成長装置
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
JP5954202B2 (ja) * 2013-01-29 2016-07-20 東京エレクトロン株式会社 成膜装置
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3479680A (en) * 1967-05-08 1969-11-25 Stewart Warner Corp Caster seal

Also Published As

Publication number Publication date
CH532960A (de) 1973-01-31
GB1346938A (en) 1974-02-13
JPS5317862B1 (enrdf_load_stackoverflow) 1978-06-12
US3750620A (en) 1973-08-07
FR2084428A5 (enrdf_load_stackoverflow) 1971-12-17
AT321994B (de) 1975-04-25
DE2110289B2 (de) 1980-03-13
DE2110289A1 (de) 1971-09-23
SE368724B (enrdf_load_stackoverflow) 1974-07-15
CA923635A (en) 1973-03-27
DE2110289C3 (de) 1980-10-30
BE764013A (fr) 1971-09-09

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