US3750620A - Vapor deposition reactor - Google Patents

Vapor deposition reactor Download PDF

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Publication number
US3750620A
US3750620A US00120983A US3750620DA US3750620A US 3750620 A US3750620 A US 3750620A US 00120983 A US00120983 A US 00120983A US 3750620D A US3750620D A US 3750620DA US 3750620 A US3750620 A US 3750620A
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US
United States
Prior art keywords
reactor
tube
gas stream
substrates
susceptor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00120983A
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English (en)
Inventor
F Eversteijn
H Peek
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US Philips Corp
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US Philips Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Definitions

  • ABSTRACT The invention relates to a reactor in which during operation a susceptor is heated and indirectly also a substrate, for example, of semiconductor material arranged on the susceptor. The heated substrate reacts with a gas stream so that the substrate may be etched or oxidized. As an alternative material may be deposited on the substrate from the gas stream.
  • the invention relates to a reactor for carrying out a process involving a stream of gas and at least one substrate, said reactor comprising an elongated tube and being provided with a device for heating the substrate through a susceptor having a temperature exceeding the ambient temperature and with members for passing a stream of gas in the direction of length of the tube.
  • Such a reactor is known, for example, from semiconductor manufacture, where it may be employed for carrying out porcesses such as the deposition of a semiconductor material from a gas stream on a semiconductor substrate in singleor polycrystal form, for etching semiconductor substrates by a gaseous etchant or for converting a semiconductor surface into a nitride or an oxide with the aid of a gas stream.
  • the susceptor operates as a heat source for the substrate and over a heat source outside the tube it has the advantage that the tube is at a lower temperature and may even be cooled so that unwanted depositions on the tube wall can be avoided and the desired processes are performed on or near the substrate.
  • Such a reactor is described, for example, in an article of E.F.Cave and ER. Czorny in R.C.A.Review Vol.24, pages 523 to 545 (1963).
  • This reactor comprises an elongated, horizontal tube provided with a device comprising a high-frequency inductance coil for heating a susceptor of a material suitable for induction heating, on which single-crystal substrates of semiconductor material are disposed.
  • the substrates are heated in a stream of gas.
  • the tube is provided with connections for passing the flow of gas in thedirection oflength of the reactor.
  • chemical reaction semiconductor material is deposited on the substrates from the stream of gas in epitaxial manner.
  • Thsi drawback can be avoided only with difficulty, particularly when the deposition is performed at a high temperature, which is often the case and due to the difference between the excpansion coefficients of the material of the susceptor and that of the tube the junction between the susceptor and the tube wall may be very bad at said high temeprature. Moreover, at the abient temperature an amount of play between the tube wall and the susceptor is requircd to allow an unhindered slip of the susceptor into and out of the tube.
  • Said unsatisfactory junction disturbs the flow profile above the susceptor, since gas can escape towards the lower side of the susceptor, which results in an undesirable thickness variation of thedeposited layer viewed in the direction of the gas stream and at right angles thereto.
  • the invention has for its object inter alia to avoid the disadvantages described above.
  • the reactor of the kind set forth is characterized in accordance with the invention in that at least that tube portion in which the process is performed exhibits a decreasing sectional area viewed in the direction of the gas stream.
  • the reactor according to the invention has the advantage that variations in thickness of the deposited material viewed in the direction of the gas stream and at right angles thereto are reduced to a considerable extent.
  • the reactor embodying the invention preferably comprises means for continuously displacing substrates through the reactor during the process.
  • Such means are understood to include, for example, a pushing member for continuously shifting substrates on susceptors through a horizontal tube.
  • Continuously operating reactors provide an appreciably higher ield of substrates with deposited material than discontinuously operating reactors because heating-up of continuously operating reactors need take place only once, whereas in discontinuously operating reactors every charge requires heating and cooling.
  • a satisfactory control of the thickness of the deposited material is particularly obtained in a reactor embodying the invention which comprises a tube having a substantially rectangular section at right angles to the direction of length, two horizontal sides of which have a constant length, viewed in the direction of the gas stream, whereas the length of the two vertical sides decreases substantially proportionally to the length of the tube so that the prolongations of the top and bottom surfaces of the tube are at an angle
  • silicon is deposited by thermal decomposition of silane tan 4: preferably lies between 0.03 and 0.06.
  • trichlorosilane (SiHCla) l wherein V0 is the gas rate in ems/sec at normaltemperature and pressure at the inlet of the tube portion where the process takes place, 1 ⁇ is the temperature of the substrate in degrees Kelvin, Tm is the temperature of the gas in the tube portion where the process is performed in degrees K, b is the distance between the susceptor and the top surface of the reactor attheinlst 9ttb1sh rg t 9eri t process is. performed in centimetres and D0 is the diffusion coefficient in sq. cms/sec of the compound in the gas stream which determines the rate of the process. 1
  • the process is performed uniformly.
  • the value ofD for Sil l used for the deposition of silicon by thermal decomposition is 0.2 sq.cm/sec
  • the values of D for SiHCl and SiCl, used for the deposition of silicon by hydrogen reduction are 0.10 sq.crn/sec and 0.04 sq.cm/sec respectively.
  • FIG. 1 is a schematic longitudinal sectional view of a first embodiment of the reactor in accordance with the invention.
  • FIG. 2 is a schematic longitudinal sectional view of a second embodiment of the reactor in accordance with the invention.
  • FIG. 1 shows a reactor 1 for the deposition of material from a gas stream.
  • the reactor 1 comprises an elongated tube 2 having a substantially rectangular section at right angles to the direction of length and is provided 5 with a device formed by a high-frequency induction coil 3 for heating a plurality of substrates 4.
  • the reactor is furthermore provided with members (not shown) intended to pass a gas stream in the direction of the arrows 5 through the tube 2.
  • the tube 2 may be cooled by water or air.
  • the substrates 4 are located during the heating process on a susceptor 7, which may consist of graphite, a
  • the susceptor 7 is enclosed between two auxiliary pieces 8 and 9 of quartz and joins the upright walls of the tube.
  • the susceptor may have a length of cms, a width of 10 cms and a thickness of l cm. Such susceptors can accommodate in the longitudinal direction 11 silicon substrates of a diameter of 5 cms and in thelateral direction 3 substrates (in total 33 substrates). A conventional thickness of such substrates is 200 to 250 gum.
  • silicon is epitaxially deposited, for example, from a hydrogen stream having 0.1 percent by volume of Sil-l,,.
  • the average rate of deposition of material is 0.4pum/min. with a variation in thickness in the direction of length of the susceptor of less than about 2 percent.
  • FIG. 2 shows a portion of a second embodiment of the reactor 1 in accordance with the invention, which differs from the foregoing Example in that means (not shown) are provid ed for continuously displacing substrates 4 through the reactor 1 during the deposition of material.
  • the closing means for the susceptor can be omitted and a pluraltiy of susceptors 21 are shifted one after the other through the tube 2 during the deposition process.
  • the direction of displacement of the susceptors 21 may be equal to the direction of the gas stream or opposite thereto.
  • the rate of passage of the susceptors will usually be low as compared with V.
  • the average rate of epitaxial deposition of silicon is 0.4 ,zum/min. If the gas stream contains a dopant, for examples, in the form of the compound PH the variation in the concentration of the impurity throughout the thickness of the deposited silicon layer is less than about 4 percent.
  • epitaxial and polycrystalline layers may be deposited.
  • semiconductor material compounds of semiconductor materials for example, silicon nitride may be deposited.
  • the substrates thus treated can be worked up in a conventional manner often into many semiconductor devices in each substrate.
  • Etching processes on substrates may also be carried out in the manner described above.
  • a reactor for carrying out a process involving a gas stream and at least one substrate comprising an elongated tube and being provided with a device for heating the substrate through a susceptor having a temperature exceeding the ambient temperature and with members for passing a gas stream in the direction of length of the tube characterized in that at least that tube portion in which the process is performed exhibits a descreasing sectional area viewed in the direction of the gas stream.
  • a reactor as claimed in claim 1 characterized in that means are provided for the continuous displacement of substrates through the reactor during the process.
  • a reactor as claimed in claim 2 characterized in that at right angles to the longitudinal direction the tube has a substantially rectangular section, two horizontal sides of which have a substantially constant length, viewed in the direction of the gas stream, whereas the lengths of the two vertical sides decrease substantially proportionally to the length of the tube so that the prolongations of the top and bottom surfaces of the tube are at an angle 4.
  • the reactor of claim 3 wherein in the tube the tangent of angle ((1)) lies between 0.03 and 0.06, said reactor being intended for the deposition of silicon by thermal decomposition of silane.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
US00120983A 1970-03-11 1971-03-04 Vapor deposition reactor Expired - Lifetime US3750620A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (enrdf_load_stackoverflow) 1970-03-11 1970-03-11

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US3750620A true US3750620A (en) 1973-08-07

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US00120983A Expired - Lifetime US3750620A (en) 1970-03-11 1971-03-04 Vapor deposition reactor

Country Status (11)

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US (1) US3750620A (enrdf_load_stackoverflow)
JP (1) JPS5317862B1 (enrdf_load_stackoverflow)
AT (1) AT321994B (enrdf_load_stackoverflow)
BE (1) BE764013A (enrdf_load_stackoverflow)
CA (1) CA923635A (enrdf_load_stackoverflow)
CH (1) CH532960A (enrdf_load_stackoverflow)
DE (1) DE2110289C3 (enrdf_load_stackoverflow)
FR (1) FR2084428A5 (enrdf_load_stackoverflow)
GB (1) GB1346938A (enrdf_load_stackoverflow)
NL (1) NL7003431A (enrdf_load_stackoverflow)
SE (1) SE368724B (enrdf_load_stackoverflow)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096822A (en) * 1975-09-29 1978-06-27 Nippondenso Co., Ltd. Gaseous atmosphere control apparatus for a semiconductor manufacturing system
US4309961A (en) * 1979-03-29 1982-01-12 Tel-Thermco Engineering Co., Ltd. Apparatus for thermal treatment of semiconductors
US4312294A (en) * 1979-03-29 1982-01-26 Tel-Thermco Engineering Co., Ltd. Apparatus for thermal treatment of semiconductors
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4472622A (en) * 1979-04-18 1984-09-18 Tel-Thermco Engineering Co., Ltd. Apparatus for thermal treatment of semiconductors
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
WO1989012703A1 (en) * 1988-06-22 1989-12-28 Asm Epitaxy, Inc. Gas injector apparatus for chemical vapor deposition reactors
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4991540A (en) * 1987-06-30 1991-02-12 Aixtron Gmbh Quartz-glass reactor for MOCVD systems
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5458918A (en) * 1987-06-24 1995-10-17 Advanced Semiconductor Materials America, Inc. Gas injectors for reaction chambers in CVD systems
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US6093253A (en) * 1998-04-06 2000-07-25 Abb Research Ltd. Method and a device for epitaxial growth of objects by chemical vapor deposition
US6214116B1 (en) * 1998-01-17 2001-04-10 Hanvac Corporation Horizontal reactor for compound semiconductor growth
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
US6666921B2 (en) * 2001-02-28 2003-12-23 Japan Pionics Co., Ltd. Chemical vapor deposition apparatus and chemical vapor deposition method
US20060096531A1 (en) * 2002-06-10 2006-05-11 Tokyo Electron Limited Processing device and processing method
US20080092812A1 (en) * 2004-06-10 2008-04-24 Mcdiarmid James Methods and Apparatuses for Depositing Uniform Layers
US20080248200A1 (en) * 2005-06-02 2008-10-09 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US20090126635A1 (en) * 2007-11-21 2009-05-21 Sumitomo Electric Industries, Ltd. Metalorganic Chemical Vapor Deposition Reactor
US20090148704A1 (en) * 2007-12-11 2009-06-11 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US20120318196A1 (en) * 2002-07-26 2012-12-20 Alex Ignatiev System for forming superconductor material on a tape substrate
US20140209028A1 (en) * 2013-01-29 2014-07-31 Tokyo Electron Limited Film deposition apparatus
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
FR2612946B1 (fr) * 1987-03-27 1993-02-19 Chimie Metal Procede et installation pour le depot chimique de revetements ultradurs a temperature moderee

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096822A (en) * 1975-09-29 1978-06-27 Nippondenso Co., Ltd. Gaseous atmosphere control apparatus for a semiconductor manufacturing system
US4309961A (en) * 1979-03-29 1982-01-12 Tel-Thermco Engineering Co., Ltd. Apparatus for thermal treatment of semiconductors
US4312294A (en) * 1979-03-29 1982-01-26 Tel-Thermco Engineering Co., Ltd. Apparatus for thermal treatment of semiconductors
US4472622A (en) * 1979-04-18 1984-09-18 Tel-Thermco Engineering Co., Ltd. Apparatus for thermal treatment of semiconductors
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5525157A (en) * 1987-06-24 1996-06-11 Advanced Semiconductor Materials America, Inc. Gas injectors for reaction chambers in CVD systems
US5819684A (en) * 1987-06-24 1998-10-13 Hawkins; Mark R. Gas injection system for reaction chambers in CVD systems
US5458918A (en) * 1987-06-24 1995-10-17 Advanced Semiconductor Materials America, Inc. Gas injectors for reaction chambers in CVD systems
US4991540A (en) * 1987-06-30 1991-02-12 Aixtron Gmbh Quartz-glass reactor for MOCVD systems
WO1989012703A1 (en) * 1988-06-22 1989-12-28 Asm Epitaxy, Inc. Gas injector apparatus for chemical vapor deposition reactors
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US6214116B1 (en) * 1998-01-17 2001-04-10 Hanvac Corporation Horizontal reactor for compound semiconductor growth
US6093253A (en) * 1998-04-06 2000-07-25 Abb Research Ltd. Method and a device for epitaxial growth of objects by chemical vapor deposition
US6666921B2 (en) * 2001-02-28 2003-12-23 Japan Pionics Co., Ltd. Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
US20060096531A1 (en) * 2002-06-10 2006-05-11 Tokyo Electron Limited Processing device and processing method
US20120318196A1 (en) * 2002-07-26 2012-12-20 Alex Ignatiev System for forming superconductor material on a tape substrate
US20080092812A1 (en) * 2004-06-10 2008-04-24 Mcdiarmid James Methods and Apparatuses for Depositing Uniform Layers
US20080248200A1 (en) * 2005-06-02 2008-10-09 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US8920565B2 (en) * 2007-11-21 2014-12-30 Sumitomo Electric Industries, Ltd. Metalorganic chemical vapor deposition reactor
US20090126635A1 (en) * 2007-11-21 2009-05-21 Sumitomo Electric Industries, Ltd. Metalorganic Chemical Vapor Deposition Reactor
US20090148704A1 (en) * 2007-12-11 2009-06-11 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US8349403B2 (en) 2007-12-11 2013-01-08 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US8628616B2 (en) * 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US8349083B2 (en) 2007-12-11 2013-01-08 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US20140209028A1 (en) * 2013-01-29 2014-07-31 Tokyo Electron Limited Film deposition apparatus
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Also Published As

Publication number Publication date
BE764013A (fr) 1971-09-09
AT321994B (de) 1975-04-25
FR2084428A5 (enrdf_load_stackoverflow) 1971-12-17
DE2110289C3 (de) 1980-10-30
NL7003431A (enrdf_load_stackoverflow) 1971-09-14
DE2110289A1 (de) 1971-09-23
CA923635A (en) 1973-03-27
CH532960A (de) 1973-01-31
DE2110289B2 (de) 1980-03-13
JPS5317862B1 (enrdf_load_stackoverflow) 1978-06-12
GB1346938A (en) 1974-02-13
SE368724B (enrdf_load_stackoverflow) 1974-07-15

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