DE2105164C2 - Halbleiterbauelement mit Basis- und Emitterzone und Widerstandsschicht und Verfahren zu seiner Herstellung - Google Patents
Halbleiterbauelement mit Basis- und Emitterzone und Widerstandsschicht und Verfahren zu seiner HerstellungInfo
- Publication number
- DE2105164C2 DE2105164C2 DE2105164A DE2105164A DE2105164C2 DE 2105164 C2 DE2105164 C2 DE 2105164C2 DE 2105164 A DE2105164 A DE 2105164A DE 2105164 A DE2105164 A DE 2105164A DE 2105164 C2 DE2105164 C2 DE 2105164C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- emitter
- base
- window
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title description 8
- 238000004519 manufacturing process Methods 0.000 title description 7
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 206010016256 fatigue Diseases 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000003608 titanium Chemical class 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7002117A NL7002117A (en, 2012) | 1970-02-14 | 1970-02-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2105164A1 DE2105164A1 (de) | 1971-09-02 |
| DE2105164C2 true DE2105164C2 (de) | 1985-08-22 |
Family
ID=19809336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2105164A Expired DE2105164C2 (de) | 1970-02-14 | 1971-02-04 | Halbleiterbauelement mit Basis- und Emitterzone und Widerstandsschicht und Verfahren zu seiner Herstellung |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3739239A (en, 2012) |
| JP (1) | JPS536506B1 (en, 2012) |
| BE (1) | BE762907A (en, 2012) |
| BR (1) | BR7100946D0 (en, 2012) |
| CA (1) | CA918300A (en, 2012) |
| CH (1) | CH520404A (en, 2012) |
| DE (1) | DE2105164C2 (en, 2012) |
| FR (1) | FR2079433B1 (en, 2012) |
| GB (1) | GB1338048A (en, 2012) |
| NL (1) | NL7002117A (en, 2012) |
| SE (1) | SE372374B (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896475A (en) * | 1972-01-28 | 1975-07-22 | Philips Corp | Semiconductor device comprising resistance region having portions lateral to conductors |
| US3848261A (en) * | 1972-06-19 | 1974-11-12 | Trw Inc | Mos integrated circuit structure |
| FR2526225B1 (fr) * | 1982-04-30 | 1985-11-08 | Radiotechnique Compelec | Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu |
| JP7256622B2 (ja) * | 2018-09-26 | 2023-04-12 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL296170A (en, 2012) * | 1962-10-04 | |||
| US3409523A (en) * | 1966-03-10 | 1968-11-05 | Bell Telephone Labor Inc | Electroetching an aluminum plated semiconductor in a tetraalkylammonium hydroxide electrolyte |
| NL6706641A (en, 2012) * | 1966-11-07 | 1968-11-13 | ||
| US3445727A (en) * | 1967-05-15 | 1969-05-20 | Raytheon Co | Semiconductor contact and interconnection structure |
| US3460007A (en) * | 1967-07-03 | 1969-08-05 | Rca Corp | Semiconductor junction device |
| NL164703C (nl) * | 1968-06-21 | 1981-01-15 | Philips Nv | Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen. |
-
1970
- 1970-02-14 NL NL7002117A patent/NL7002117A/xx unknown
-
1971
- 1971-02-04 DE DE2105164A patent/DE2105164C2/de not_active Expired
- 1971-02-04 US US3739239D patent/US3739239A/en not_active Expired - Lifetime
- 1971-02-10 CA CA104959A patent/CA918300A/en not_active Expired
- 1971-02-11 BR BR94671A patent/BR7100946D0/pt unknown
- 1971-02-11 SE SE175071A patent/SE372374B/xx unknown
- 1971-02-11 CH CH202771A patent/CH520404A/de not_active IP Right Cessation
- 1971-02-12 BE BE762907A patent/BE762907A/xx unknown
- 1971-02-12 FR FR7104774A patent/FR2079433B1/fr not_active Expired
- 1971-02-15 JP JP645371A patent/JPS536506B1/ja active Pending
- 1971-04-19 GB GB2154771A patent/GB1338048A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BR7100946D0 (pt) | 1973-02-27 |
| FR2079433A1 (en, 2012) | 1971-11-12 |
| US3739239A (en) | 1973-06-12 |
| FR2079433B1 (en, 2012) | 1974-05-31 |
| BE762907A (fr) | 1971-08-12 |
| NL7002117A (en, 2012) | 1971-08-17 |
| DE2105164A1 (de) | 1971-09-02 |
| GB1338048A (en) | 1973-11-21 |
| CA918300A (en) | 1973-01-02 |
| JPS536506B1 (en, 2012) | 1978-03-08 |
| SE372374B (en, 2012) | 1974-12-16 |
| CH520404A (de) | 1972-03-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |