BE762907A - Dispositif semiconducteur et procede permettant sa fabrication - Google Patents

Dispositif semiconducteur et procede permettant sa fabrication

Info

Publication number
BE762907A
BE762907A BE762907A BE762907A BE762907A BE 762907 A BE762907 A BE 762907A BE 762907 A BE762907 A BE 762907A BE 762907 A BE762907 A BE 762907A BE 762907 A BE762907 A BE 762907A
Authority
BE
Belgium
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
BE762907A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE762907A publication Critical patent/BE762907A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/7302Bipolar junction transistors structurally associated with other devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE762907A 1970-02-14 1971-02-12 Dispositif semiconducteur et procede permettant sa fabrication BE762907A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7002117A NL7002117A (fr) 1970-02-14 1970-02-14

Publications (1)

Publication Number Publication Date
BE762907A true BE762907A (fr) 1971-08-12

Family

ID=19809336

Family Applications (1)

Application Number Title Priority Date Filing Date
BE762907A BE762907A (fr) 1970-02-14 1971-02-12 Dispositif semiconducteur et procede permettant sa fabrication

Country Status (11)

Country Link
US (1) US3739239A (fr)
JP (1) JPS536506B1 (fr)
BE (1) BE762907A (fr)
BR (1) BR7100946D0 (fr)
CA (1) CA918300A (fr)
CH (1) CH520404A (fr)
DE (1) DE2105164C2 (fr)
FR (1) FR2079433B1 (fr)
GB (1) GB1338048A (fr)
NL (1) NL7002117A (fr)
SE (1) SE372374B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896475A (en) * 1972-01-28 1975-07-22 Philips Corp Semiconductor device comprising resistance region having portions lateral to conductors
US3848261A (en) * 1972-06-19 1974-11-12 Trw Inc Mos integrated circuit structure
FR2526225B1 (fr) * 1982-04-30 1985-11-08 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
JP7256622B2 (ja) * 2018-09-26 2023-04-12 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296170A (fr) * 1962-10-04
US3409523A (en) * 1966-03-10 1968-11-05 Bell Telephone Labor Inc Electroetching an aluminum plated semiconductor in a tetraalkylammonium hydroxide electrolyte
NL6706641A (fr) * 1966-11-07 1968-11-13
US3445727A (en) * 1967-05-15 1969-05-20 Raytheon Co Semiconductor contact and interconnection structure
US3460007A (en) * 1967-07-03 1969-08-05 Rca Corp Semiconductor junction device
NL164703C (nl) * 1968-06-21 1981-01-15 Philips Nv Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.

Also Published As

Publication number Publication date
GB1338048A (en) 1973-11-21
FR2079433A1 (fr) 1971-11-12
FR2079433B1 (fr) 1974-05-31
JPS536506B1 (fr) 1978-03-08
CH520404A (de) 1972-03-15
SE372374B (fr) 1974-12-16
DE2105164C2 (de) 1985-08-22
DE2105164A1 (de) 1971-09-02
NL7002117A (fr) 1971-08-17
US3739239A (en) 1973-06-12
CA918300A (en) 1973-01-02
BR7100946D0 (pt) 1973-02-27

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